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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML6402TR

Name: IRLML6402TR
Brand: Infineon Technologies
SKU: IRLML6402TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML6402TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML6402TR.pdf

Description:: MOSFET P-CH 20V 3.7A SOT-23

Quantity:: RFQ Add To RFQ list

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Inventory:6,055

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Product details

Overview

IRLML6402TR from Infineon Technologies (formerly International Rectifier) is a P-Channel enhancement-mode HEXFET® Power MOSFET in Micro3™ (SOT-23) package, rated for -20 V V_DS, 0.065 Ω R_DS(on) at V_GS = -4.5 V, -3.7 A continuous drain current at 25°C, and featuring ultra-low profile (<1.1 mm) for space-constrained portable electronics battery management.

For engineers reviewing the IRLML6402TR datasheet, IRLML6402TR pinout, IRLML6402TR application, or IRLML6402TR equivalent, key selection criteria include verified P-channel low-side switching capability, thermal resistance (R_θJA = 75°C/W), body diode recovery performance (t_rr = 29 ns), and Micro3™ footprint compatibility with high-density PCB layouts.

Technical Context

This device operates as a logic-level P-channel MOSFET optimized for low-voltage DC load switching, where gate drive is sourced from standard 3.3 V or 5 V microcontroller outputs. Its negative threshold voltage (-0.40 to -1.2 V) ensures reliable turn-on with modest negative gate bias, while its low R_DS(on) minimizes conduction loss in battery-powered systems.

The integrated body diode supports reverse-current paths in buck converters and load-dump protection circuits, with characterized reverse recovery charge (Q_rr = 11–17 nC) and fast trr (29–43 ns), enabling stable operation in synchronous rectification and bidirectional power control topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage P-channel switching in ≤20 V systems
R_DS(on)	0.065 Ω @ V_GS = -4.5 V - Enables <100 mW conduction loss at 3.7 A, critical for thermal budget in sealed enclosures
I_D (25°C)	-3.7 A - Continuous current rating sufficient for USB-C PD load switches and smart battery disconnects
t_rr	29 ns - Fast body diode recovery reduces switching loss and EMI in high-frequency DC-DC stages
Q_g	8.0–12 nC - Low gate charge allows fast turn-on/off with minimal driver strength, reducing MCU GPIO stress
R_θJA	75°C/W - Thermal resistance enables 1.3 W power dissipation at 25°C ambient without heatsink in SOT-23 layout
V_GS(th)	-0.55 V (typ.) - Ensures full enhancement with 3.3 V logic-level gate drive (V_GS = -3.3 V)

Pinout & Package

IRLML6402TR uses the Micro3™ package - a thermally enhanced variant of SOT-23 (JEDEC TO-236AB) with exposed drain pad for improved heat transfer. Package dimensions: 1.95 × 2.74 × 1.12 mm (L × W × H), height <1.1 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to system ground or higher-potential rail; carries full load current and serves as reference for gate drive
2 (Gate)	Control electrode for channel formation	High-impedance input requiring <100 nA leakage; driven negative relative to source to turn on
3 (Drain)	Power output terminal / high-side connection point	Exposed pad tied internally to drain; primary thermal path and current exit node for load-switching applications

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.065 Ω at -4.5 V gate drive enables >95% efficiency in 3.3 V/5 V load switches under 3 A
Micro3™ package	Thermally enhanced SOT-23 with exposed drain pad delivers 25% lower R_θJA vs. standard SOT-23
Fast body diode	29 ns t_rr and 11 nC Q_rr support clean commutation in synchronous buck and OR-ing circuits
Logic-level compatible	V_GS(th) down to -0.4 V ensures robust turn-on with 3.3 V microcontrollers without level-shifting

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch in battery protection IC interface to isolate cell during fault conditions.

Use Value: 0.065 Ω R_DS(on) limits voltage drop to <240 mV at 3.7 A, preserving battery runtime and minimizing thermal rise in compact packs.

Use Scenario: Hot-swap control and VBUS enable/disable in USB-C receptacles supporting 3 A charging.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path between upstream controller and downstream port.

Use Value: 12 nC total gate charge allows full turn-on in <1 μs using standard GPIO, meeting USB PD 3.0 timing requirements.

PCMCIA Card Power Control

IoT Sensor Node Load Management

Use Scenario: Sequenced power-up and inrush limiting for legacy PCMCIA peripherals in industrial laptops.

IC Role / Device Role / Timing Role: P-channel switch placed between main 3.3 V rail and card slot, controlled by host-side enable signal.

Use Value: <1.1 mm profile fits within strict PCMCIA Type II height envelope (5.0 mm), avoiding mechanical interference.

Use Scenario: Duty-cycled power gating of BLE radio, environmental sensors, and flash memory in battery-operated edge nodes.

IC Role / Device Role / Timing Role: Standby-mode disconnect switch isolating non-active subsystems to extend multi-year battery life.

Use Value: 100 nA gate leakage at V_GS = 0 V ensures <1 μA quiescent current contribution, critical for sub-10 μA sleep budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS	R_DS(on) = 0.095 Ω @ -4.5 V; higher threshold (-0.7 V typ.); same SOT-23 package	Slightly higher conduction loss; requires stronger gate drive margin for reliable turn-on at 3.3 V	Preferred where cost sensitivity outweighs 32 mΩ R_DS(on) penalty and thermal headroom exists
DMG1012T	R_DS(on) = 0.075 Ω @ -4.5 V; lower ID rating (-2.8 A); same Micro3™ footprint	Lower current capacity limits use to ≤2.5 A loads; identical thermal profile and pinout	Valid drop-in replacement only if peak load current remains below 2.5 A and board layout matches Micro3™ pad stack

Compared with Si2301DDS and DMG1012T, IRLML6402TR offers the lowest R_DS(on) and highest continuous current rating in the Micro3™ form factor, making it optimal for thermally constrained 3–3.7 A battery-switching applications where efficiency and reliability are prioritized over marginal cost savings.

Availability

IRLML6402TR is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and PCMCIA card power control requiring stable component supply and long-term industrial availability.

Supply support for IRLML6402TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control solutions.

The IRLML series belongs to Infineon's logic-level HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC load switching in portable and space-constrained applications.

FAQ

What is the maximum safe operating voltage for IRLML6402TR?

The absolute maximum drain-to-source voltage (V_DS) is -20 V. Operation beyond this rating risks avalanche breakdown and permanent damage. Derating is recommended above 15 V in high-temperature environments (>85°C junction), especially under pulsed conditions where peak voltage overshoot may occur due to parasitic inductance.

Can IRLML6402TR be used in a high-side switch configuration?

No - IRLML6402TR is a P-channel MOSFET but lacks integrated level-shifting or charge-pump circuitry required for true high-side switching with ground-referenced control signals. It functions reliably only as a low-side switch (source grounded) or as part of a back-to-back pair for bidirectional blocking.

Is the body diode suitable for reverse polarity protection?

Yes - the intrinsic body diode provides unidirectional forward conduction from source to drain. When configured with source connected to input and drain to load, it blocks reverse current flow, offering effective reverse-polarity protection with typical V_SD = -1.2 V at -1.0 A, provided thermal limits are observed during fault events.

Does IRLML6402TR require a gate resistor for ESD protection?

A small gate resistor (10–100 Ω) is recommended between driver and gate to dampen ringing and reduce ESD-induced dv/dt stress. While the device has built-in gate oxide protection (±12 V V_GS rating), external resistance improves robustness in noisy industrial or handheld environments without degrading switching speed significantly.

IRLML6402TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 65mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 633 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro3™/SOT-23

IRLML6402TR FAQ

1.How can I place an order for IRLML6402TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML6402TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML6402TR reliable?

The price and inventory of IRLML6402TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML6402TR is usually 5 days.

3.What payment methods are accepted for IRLML6402TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML6402TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML6402TR?

IRLML6402TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML6402TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML6402TR?

For technical support, including IRLML6402TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML6402TR requirements.

6.How does Aetrix verify that IRLML6402TR is sourced from the original manufacturer or authorized distributors?

All IRLML6402TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML6402TR meets industry standards.

7.What is the process for return or replacement of IRLML6402TR?

All IRLML6402TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLML6402TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML6402TR part is unused and in its original packaging.

Return procedure for IRLML6402TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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