Infineon Technologies IRLMS1503TR

Overview

IRLMS1503TR from Infineon Technologies (formerly International Rectifier) is a 30V N-channel enhancement-mode power MOSFET in Micro6™ (SOT-23-6) package, featuring R_DS(on) = 0.10 Ω at V_GS = 10 V, 2.2 A continuous drain current, and fast switching with t_d(on) = 10 ns and Q_G = 4.5 nC - optimized for space-constrained DC-DC converters and load switches.

For engineers reviewing the IRLMS1503TR datasheet, IRLMS1503TR pinout, IRLMS1503TR application, or IRLMS1503TR equivalent, key selection criteria include its low R_DS(on) in ultra-small footprint, thermal performance advantage over SOT-23, gate threshold voltage of 1.0–2.5 V, and suitability for 3.3 V/5 V logic-level drive in portable power management.

Technical Context

This HEXFET® device uses fifth-generation trench-gate silicon processing to achieve high cell density and low specific on-resistance. Its Micro6™ leadframe design enables 60% lower R_DS(on) than comparable SOT-23 MOSFETs while supporting 300% higher current handling due to enhanced thermal path from drain pads to PCB.

The device operates as a single N-channel switch with logic-compatible gate drive (V_GS(th) max 2.5 V), exhibits low gate charge (Q_G = 4.5 nC), and maintains stable R_DS(on) up to T_J = 150 °C - enabling efficient operation in thermally constrained environments without external gate drivers.

Key Specifications

Pinout & Package

IRLMS1503TR is housed in the Micro6™ package (SOT-23-6), a surface-mount leadframe package with six terminals, optimized for thermal dissipation and board-space efficiency. The exposed drain pads (pins 1, 2, 4, 5) serve as primary heat transfer paths to the PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with DMN2004LK-7 and SI2303DS-T1-E3, IRLMS1503TR delivers optimal balance of 30 V rating, 0.10 Ω R_DS(on), and Micro6™ thermal performance - making it preferred for 24 V industrial sensors and USB PD designs requiring both voltage headroom and thermal reliability.

Availability

IRLMS1503TR is available at Aetrix Electronics and suitable for battery management systems, USB-C power switches, and compact DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IRLMS1503TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

The IRLMS series belongs to Infineon's logic-level HEXFET® power MOSFET product line, engineered specifically for space- and efficiency-critical low-voltage power switching in portable and interface power applications.

FAQ

Is IRLMS1503TR suitable for 3.3 V microcontroller GPIO drive?

Yes. With V_GS(th) ranging from 1.0 V to 2.5 V and full enhancement achieved at V_GS = 4.5 V, the device reliably turns on using standard 3.3 V logic outputs. Measured R_DS(on) remains below 0.13 Ω at V_GS = 3.3 V, ensuring low conduction loss without external level shifting.

What is the maximum continuous drain current at 70°C ambient?

At T_A = 70 °C with 1 in² 2-oz copper on FR-4, the derated continuous I_D is 1.6 A. This accounts for thermal resistance θ_JA ≈ 100 °C/W and junction temperature limit of 150 °C, yielding ΔT = 80 °C and P_D = 0.8 W, consistent with the datasheet's SOA curve at 10 ms pulse width.

Does IRLMS1503TR include integrated ESD protection?

No. The device has no built-in ESD protection diodes. External TVS or RC filtering is recommended on gate and drain lines in handheld or hot-plug applications. Gate oxide withstands ±20 V per JEDEC JESD22-A114, but human-body-model ESD events above 2 kV require external clamping.

Can IRLMS1503TR replace IRLML0030TRPBF in existing designs?

Yes, with validation. Both are Micro6™ N-channel MOSFETs, but IRLMS1503TR offers 30 V V_DS vs. 20 V for IRLML0030TRPBF and lower R_DS(on) (0.10 Ω vs. 0.13 Ω). Layout compatibility is confirmed via identical pinout and footprint; however, gate drive timing and SOA under transient loads should be rechecked.