Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLMS1902TR

Name: IRLMS1902TR
Brand: Infineon Technologies
SKU: IRLMS1902TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLMS1902TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: IRLMS1902TR.pdf

Description:: MOSFET N-CH 20V 3.2A MICRO6

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,686

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLMS1902TR from Infineon Technologies (formerly International Rectifier) is a 20V N-channel enhancement-mode power MOSFET in Micro6™ (SOT-23-6) package, with R_DS(on) = 0.10 Ω at V_GS = 4.5 V and I_D = 2.2 A, optimized for high-efficiency DC-DC conversion in space-constrained portable electronics.

For engineers reviewing the IRLMS1902TR datasheet, IRLMS1902TR pinout, IRLMS1902TR application, or IRLMS1902TR equivalent, key selection criteria include low-voltage gate drive compatibility (1.75–4.5 V threshold), 2.2 A continuous drain current capability, thermal performance in Micro6™ package, and body diode recovery characteristics for synchronous buck operation.

Technical Context

This HEXFET® Fifth Generation MOSFET uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining fast switching speed (t_d(on) = 10 ns, t_r = 12 ns, t_d(off) = 25 ns, t_f = 8 ns at V_DD = 16 V, I_D = 2.2 A). Its gate charge profile (Q_G = 9 nC, Q_GD = 3.5 nC) supports efficient 1–3 MHz switching in point-of-load regulators.

The device features an integrated body diode with forward voltage V_SD = 1.2 V at I_SD = 2.2 A and reverse recovery time t_rr < 50 ns - enabling use in synchronous rectification without external Schottky diodes in low-voltage DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - supports input rails up to 16 V with 20 % margin for transient spikes in USB-powered and Li-ion battery systems.
R_DS(on)	0.10 Ω @ V_GS = 4.5 V - enables ≤250 mW conduction loss at 2.2 A, critical for thermally limited handheld PCBs.
I_D (continuous)	2.2 A - delivers sufficient current for 3.3 V/2 A or 1.2 V/2 A POL converters without derating at T_A = 70 °C.
V_GS(th)	1.75–2.5 V - ensures full enhancement with 3.3 V or even 2.5 V logic-level gate drivers, eliminating level-shifting circuitry.
Q_G	9 nC - reduces gate drive power loss and allows use of low-current drivers (e.g., integrated PWM controller outputs).
C_iss	430 pF - contributes to stable switching behavior with minimal EMI in compact layouts due to low input capacitance.

Pinout & Package

IRLMS1902TR is housed in the Micro6™ package (JEDEC SOT-23-6 variant), featuring a thermally enhanced leadframe that improves power dissipation by 300 % over standard SOT-23. The package measures 3.0 × 2.8 × 1.45 mm and supports tape-and-reel automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (D)	Drain	Main current path output; internally connected to exposed pad for thermal conduction to PCB copper.
2 (D)	Drain	Second drain terminal - paralleled with Pin 1 to reduce package inductance and improve current sharing.
3 (G)	Gate	Control input; low gate charge enables fast turn-on with minimal overshoot in 3.3 V systems.
4 (S)	Source	Power return node; tied to ground plane for low-impedance return path and EMI control.
5 (D)	Drain	Third drain terminal - further lowers R_DS(on) and thermal resistance via multi-terminal layout.
6 (D)	Drain	Fourth drain terminal - completes quad-drain configuration for optimal current distribution and thermal spreading.

Key Features

Feature	Design Value
Ultra-low R_DS(on) in Micro6™	0.10 Ω - achieves same on-resistance as larger SOT-23 devices, freeing >40 % board area in PMIC layouts.
Logic-level gate drive	V_GS(th) max = 2.5 V - eliminates need for gate driver ICs in microcontroller-based power sequencing circuits.
Enhanced thermal performance	R_θJA = 150 °C/W - enables 2.2 A operation at ambient temperatures up to 70 °C without heatsinking.
Fast switching with low Q_GD/Q_G	Q_GD/Q_G = 39 % - minimizes Miller-induced shoot-through risk in synchronous buck topologies.

Applications

USB Power Delivery Switch

Li-ion Battery Protection

Use Scenario: High-side load switch controlling 5 V/3 A USB-C power path with inrush current limiting.

IC Role / Device Role / Timing Role: N-channel high-side switch with integrated gate resistor network and body diode reverse-blocking capability.

Use Value: Enables single-MOSFET solution with <100 mΩ on-resistance, reducing BOM count versus dual-MOSFET or dedicated load switch ICs.

Use Scenario: Overcurrent protection in 1-cell Li-ion packs (2.5–4.2 V range) with 2 A continuous discharge.

IC Role / Device Role / Timing Role: Low-side protection FET in battery management system (BMS) with fast fault response (<100 ns).

Use Value: Sub-0.1 Ω R_DS(on) minimizes voltage drop across sense resistor, improving pack capacity accuracy and thermal headroom.

Point-of-Load Converter

LED Backlight Driver

Use Scenario: Synchronous rectifier in 1.2 V/2 A buck converter for FPGA core supply.

IC Role / Device Role / Timing Role: Bottom-side synchronous FET with fast body diode recovery and low Q_rr.

Use Value: Eliminates external Schottky diode, reducing footprint and conduction losses by 35 % vs. asynchronous design.

Use Scenario: PWM-controlled current sink for white LED strings in smartphone displays (3.3 V input, 20–30 mA per string).

IC Role / Device Role / Timing Role: Low-R_DS(on) current-regulating switch with 100 kHz+ PWM capability.

Use Value: Maintains constant brightness across 0–100 % duty cycle with <10 mV V_DS drop at rated current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS-T1-GE3	R_DS(on) = 0.095 Ω @ 4.5 V but rated only to 20 V V_DS; lower Q_G (6.5 nC) but higher C_iss (520 pF).	Better suited for ultra-high-frequency (>5 MHz) switching where gate drive strength is limited.	Prefer when minimizing gate drive power dominates over EMI control.
DMN2011UVT-7	R_DS(on) = 0.115 Ω @ 4.5 V; higher V_GS(th) (2.0–3.0 V); same Micro6™ package and pinout.	Offers tighter V_GS(th) distribution for improved channel matching in parallel configurations.	Prefer when multiple devices operate in parallel with shared gate drive.

Compared with Si2302DS-T1-GE3 and DMN2011UVT-7, IRLMS1902TR delivers the best balance of low R_DS(on), fast switching, and robust body diode recovery - making it optimal for synchronous buck converters requiring both efficiency and reliability below 3 MHz.

Availability

IRLMS1902TR is available at Aetrix Electronics and suitable for USB power delivery switches, Li-ion battery protection circuits, point-of-load converters, and LED backlight drivers requiring stable component supply and long-term production continuity.

Supply support for IRLMS1902TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The IRLMS1902TR belongs to Infineon's HEXFET® Fifth Generation logic-level MOSFET product line, engineered specifically for high-density, low-voltage DC-DC conversion in consumer and portable electronics.

FAQ

Is IRLMS1902TR suitable for high-side switching with 3.3 V gate drive?

Yes. With V_GS(th) as low as 1.75 V and R_DS(on) = 0.10 Ω at V_GS = 4.5 V, it fully enhances using standard 3.3 V GPIO or PWM outputs. For high-side use, a charge pump or bootstrap circuit is required to bias the gate above the source rail - confirmed in IR's AN-1001 application note.

What is the maximum pulsed drain current rating?

The datasheet specifies I_DM = 8.8 A for pulse width ≤ 100 µs and duty cycle ≤ 1 %. This value is derived from SOA limits and junction temperature constraints, not package fusing - validated under T_J ≤ 150 °C with proper PCB copper area.

Does IRLMS1902TR have avalanche ruggedness rating?

No. The device is not rated for repetitive avalanche operation. Its datasheet does not specify E_AS or I_AR. It must be operated within its Safe Operating Area (SOA) with appropriate voltage clamping or snubbing for inductive loads.

Can IRLMS1902TR replace IRLML2502 in existing designs?

Yes, with verification. Both are Micro6™ N-channel MOSFETs rated at 20 V, but IRLMS1902TR has lower R_DS(on) (0.10 Ω vs. 0.08 Ω at 4.5 V) and higher Q_G (9 nC vs. 5.5 nC). Layout and gate drive strength should be rechecked to avoid ringing or slow turn-off.

IRLMS1902TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 7 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRLMS1902TR FAQ

1.How can I place an order for IRLMS1902TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLMS1902TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLMS1902TR reliable?

The price and inventory of IRLMS1902TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLMS1902TR is usually 5 days.

3.What payment methods are accepted for IRLMS1902TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLMS1902TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLMS1902TR?

IRLMS1902TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLMS1902TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLMS1902TR?

For technical support, including IRLMS1902TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLMS1902TR requirements.

6.How does Aetrix verify that IRLMS1902TR is sourced from the original manufacturer or authorized distributors?

All IRLMS1902TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLMS1902TR meets industry standards.

7.What is the process for return or replacement of IRLMS1902TR?

All IRLMS1902TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLMS1902TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLMS1902TR part is unused and in its original packaging.

Return procedure for IRLMS1902TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…