Infineon Technologies IRLMS2002

Overview

IRLMS2002 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode MOSFET optimized for low-voltage, high-efficiency load switching in space-constrained applications. It features 20 V V_DS, 6.5 A continuous drain current at 4.5 V_GS, and ultra-low 30 mΩ R_DS(on) at V_GS = 4.5 V - enabling high-current battery management and power-path control in portable electronics.

For engineers reviewing the IRLMS2002 datasheet, IRLMS2002 pinout, IRLMS2002 application, or IRLMS2002 equivalent, key selection criteria include its Micro6™ package thermal performance, gate threshold voltage range (0.6–1.2 V), pulsed current capability (20 A), body diode recovery characteristics (19–29 ns t_rr), and lead-free compliance per JEDEC J-STD-020.

Technical Context

This device operates as a single N-channel logic-level power switch with a rated breakdown voltage of 20 V and guaranteed conduction down to V_GS = 2.5 V. Its gate charge profile (Q_g = 15–22 nC, Q_gd = 3.5–5.3 nC) supports fast switching in DC-DC converters and load switches while minimizing Miller-induced shoot-through risk.

The integrated body diode exhibits V_SD = 1.2 V at 1.7 A and reverse recovery charge Q_rr = 13–20 nC, making it suitable for synchronous rectification and bidirectional current paths where controlled freewheeling is required.

Key Specifications

Pinout & Package

IRLMS2002 is housed in the Micro6™ package (SOT-23-6L), a surface-mount leadframe design offering 60% lower R_DS(on) and ~300% higher current capacity than standard SOT-23. Its compact 3.0 × 2.8 mm footprint and exposed drain pad enhance thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLMS2002, DMN2020LSD-13 offers marginally lower R_DS(on) and gate charge for improved efficiency in high-frequency switching, while SI2302DS-T1-GE3 trades performance for cost and is viable only below 4 A continuous load.

Availability

IRLMS2002 is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, DC-DC synchronous rectifiers, and portable device load management requiring stable component supply and long-term industrial availability.

Supply support for IRLMS2002 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The IRLMS2002 belongs to Infineon's HEXFET® Micro6™ logic-level MOSFET product line, engineered specifically for high-density, low-voltage power switching in consumer and portable electronics where board space and thermal efficiency are critical.

FAQ

What is the maximum junction temperature for reliable operation of IRLMS2002?

The IRLMS2002 has a specified junction temperature range of –55°C to +150°C. For continuous operation, thermal design must ensure peak T_J remains ≤150°C under worst-case ambient and power dissipation conditions. Derating begins above 25°C ambient at 16 mW/°C, per the linear derating factor.

Can IRLMS2002 be driven directly by a 1.8 V GPIO?

No - while its V_GS(th) minimum is 0.6 V, full enhancement requires ≥2.5 V_GS to achieve rated R_DS(on). At 1.8 V_GS, R_DS(on) rises significantly (>100 mΩ), increasing conduction loss. Use with 2.5 V or higher logic families (e.g., 3.3 V MCU outputs) is recommended.

Does IRLMS2002 include ESD protection on the gate?

The IRLMS2002 does not integrate on-die ESD protection diodes. Gate-to-source and gate-to-drain leakage is specified at ±100 nA up to ±12 V, indicating no internal clamping. External gate resistors (≤100 Ω) and TVS diodes are advised in high-noise environments to prevent gate oxide damage.

How does the Micro6™ package compare thermally to standard SOT-23?

The Micro6™ package delivers a 62.5 °C/W junction-to-ambient thermal resistance on FR-4 - approximately 40% lower than typical SOT-23 (≈100–110 °C/W). This improvement stems from four parallel drain leads and enhanced copper exposure, enabling nearly 3× higher current handling at equivalent temperature rise.