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Infineon Technologies IRLMS2002GTRPBF
- Part No.:
- IRLMS2002GTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6
- Datasheet:
-
IRLMS2002GTRPBF.pdf
- Description:
- MOSFET N-CH 20V 6.5A MICRO6
- Quantity:
- Payment:
- Shipping:
Inventory:3,238
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Product details
Overview
IRLMS2002GTRPBF from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for low-voltage, high-efficiency load switching in portable electronics. It features 20 V VDS, 6.5 A continuous drain current at 4.5 V VGS, and ultra-low 30 mΩ RDS(on) at 4.5 V - enabling compact battery-powered power management in space-constrained PCBs.
For engineers reviewing the IRLMS2002GTRPBF datasheet, IRLMS2002GTRPBF pinout, IRLMS2002GTRPBF application, or IRLMS2002GTRPBF equivalent, key selection criteria include its 2.5 V gate threshold compatibility with 3.3 V logic, Micro6™ package thermal performance, body diode recovery characteristics, and pulsed current capability up to 20 A.
Technical Context
This MOSFET employs trench-gate HEXFET® technology to achieve sub-30 mΩ on-resistance in a 6-pin SOT-23–derivative Micro6™ package. Its 0.6–1.2 V gate threshold ensures reliable turn-on with standard logic-level drivers, while the integrated body diode supports synchronous rectification and reverse-current protection.
Thermal design is enabled by a 62.5 °C/W junction-to-ambient resistance and linear derating of 16 mW/°C above 70 °C ambient. The device operates across –55 to +150 °C junction temperature, with 15 nC typical total gate charge supporting fast switching in DC-DC converters and load switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for 3.3 V/5 V system rail switching |
| RDS(on) | 30 mΩ @ VGS = 4.5 V, ID = 6.5 A - Enables <195 mW conduction loss at full rated current |
| ID (continuous) | 6.5 A @ TA = 25 °C - Supports high-current USB PD or battery protection loads |
| Qg | 15 nC typ. - Allows efficient 1–2 MHz switching with low driver power demand |
| VGS(th) | 0.6–1.2 V - Ensures robust turn-on with 2.5 V–3.3 V microcontroller GPIO |
| TJ range | –55 to +150 °C - Qualified for extended industrial and automotive cabin environments |
Pinout & Package
IRLMS2002GTRPBF is housed in the Micro6™ package (SOT-23-6L), a lead-free surface-mount outline with exposed drain pads for enhanced thermal dissipation. Its compact 3.0 × 1.75 mm footprint reduces PCB area by ~30% versus standard SOT-23 while delivering nearly 3× higher current capacity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (D) | Drain | Four paralleled drain terminals connected to internal die and exposed pad - primary current path and thermal conduction path to PCB copper |
| 5 (G) | Gate | Control input requiring ≤1.2 V to turn on; low 15 nC Qg minimizes driver stress |
| 6 (S) | Source | Reference node for gate drive and load return; tied to ground or low-side switch common |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 30 mΩ @ 4.5 V - Reduces I²R losses in battery discharge paths and power OR-ing circuits |
| Logic-level gate drive | VGS(th) max 1.2 V - Eliminates need for gate boosters when driven directly from 3.3 V MCUs |
| Micro6™ thermal design | RθJA = 62.5 °C/W - Achieves 2.0 W dissipation at 25 °C ambient without heatsink |
| Fast body diode | trr = 19 ns, Qrr = 13 nC - Minimizes switching loss and voltage overshoot in synchronous buck topologies |
Applications
| USB Power Delivery Switching | Smartphone Battery Protection |
|---|---|
Use Scenario: Controlling 5 V/3 A USB-C power path between adapter and battery during charging. IC Role / Device Role / Timing Role: Low-side load switch managing power flow direction and fault isolation. Use Value: 30 mΩ RDS(on) limits voltage drop to <93 mV at 3.1 A, preserving bus regulation margin. | Use Scenario: Isolating battery from system during overcurrent or thermal shutdown events. IC Role / Device Role / Timing Role: Primary protection FET in fuel gauge–controlled cutoff circuit. Use Value: 6.5 A continuous rating handles peak GSM transmit bursts without thermal throttling. |
| Portable SSD Power Sequencing | Wireless Earbud Charging Case |
Use Scenario: Enabling NVMe SSD power rails only after host enumeration completes. IC Role / Device Role / Timing Role: Controlled power enable switch with fast turn-on (<12 ns rise time). Use Value: 15 nC Qg allows clean 10 µs enable timing using standard GPIO without slew-rate issues. | Use Scenario: Managing dual-cell Li-ion charging and load sharing between case battery and earbuds. IC Role / Device Role / Timing Role: Bidirectional load switch supporting reverse current blocking and charge path control. Use Value: Body diode VSD = 1.2 V at 1.7 A enables low-loss reverse conduction during trickle-charge mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 35 mΩ @ 4.5 V; slightly higher gate charge (17 nC) | Same Micro6™ footprint but lower current rating (5.8 A) | Preferred where tighter VGS(th) distribution (0.5–0.9 V) improves margin in low-temp operation |
| SI2302DS-T1-GE3 | RDS(on) = 45 mΩ @ 4.5 V; SOT-23-3 package, no exposed drain | Limited to 3.6 A continuous; higher thermal resistance (125 °C/W) | Selected when board layout requires 3-pin simplicity and lower cost outweighs efficiency loss |
Compared with IRLMS2002GTRPBF, DMN2004LK-7 offers tighter gate threshold control at minor RDS(on) penalty, while SI2302DS-T1-GE3 trades performance for package simplicity and cost - making the IRLMS2002GTRPBF optimal for thermally demanding, high-current portable power switches.
Availability
IRLMS2002GTRPBF is available at Aetrix Electronics and suitable for USB PD power path control, smartphone battery protection, portable SSD sequencing, and wireless earbud charging case designs requiring stable component supply and long-term lifecycle support.
Supply support for IRLMS2002GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap device physics.
The IRLMS2002GTRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in space- and thermally constrained consumer electronics.
FAQ
What is the maximum safe operating voltage for IRLMS2002GTRPBF in continuous DC applications?
The absolute maximum drain-to-source voltage (VDS) is 20 V under all conditions. Operation above this value risks avalanche breakdown and permanent damage, even with short pulses. For reliable design, derate to ≤16 V in systems with voltage transients or poor regulation, especially when used with lithium battery inputs that may reach 18 V during charging.
Can IRLMS2002GTRPBF be driven directly from a 2.5 V GPIO without level shifting?
Yes - its gate threshold voltage (VGS(th)) ranges from 0.6 V to 1.2 V, ensuring full enhancement at 2.5 V VGS. At 2.5 V, RDS(on) rises to 45 mΩ (typ.), still supporting ≥5.2 A continuous current at 70 °C ambient, making it suitable for direct MCU interface in low-power portable systems.
How does the Micro6™ package improve thermal performance over standard SOT-23?
The Micro6™ package integrates four drain leads and an exposed copper pad, reducing junction-to-ambient thermal resistance to 62.5 °C/W - 40% lower than typical SOT-23. This allows 2.0 W power dissipation at 25 °C ambient, compared to ~0.7 W for standard SOT-23, enabling higher current density without thermal derating in thin-profile PCBs.
Is the body diode suitable for reverse-current blocking in battery backup circuits?
Yes - the integrated body diode has VSD = 1.2 V at 1.7 A and trr = 19 ns, enabling effective reverse-current blocking in OR-ing configurations. When used as a high-side switch with external gate control, it prevents backfeed from secondary batteries while maintaining low forward drop during normal operation.
IRLMS2002GTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1310 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro6™(SOT23-6)
IRLMS2002GTRPBF FAQ
1.How can I place an order for IRLMS2002GTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLMS2002GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLMS2002GTRPBF reliable?
The price and inventory of IRLMS2002GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLMS2002GTRPBF is usually 5 days.
3.What payment methods are accepted for IRLMS2002GTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLMS2002GTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLMS2002GTRPBF?
IRLMS2002GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLMS2002GTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLMS2002GTRPBF?
For technical support, including IRLMS2002GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLMS2002GTRPBF requirements.
6.How does Aetrix verify that IRLMS2002GTRPBF is sourced from the original manufacturer or authorized distributors?
All IRLMS2002GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLMS2002GTRPBF meets industry standards.
7.What is the process for return or replacement of IRLMS2002GTRPBF?
All IRLMS2002GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLMS2002GTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLMS2002GTRPBF part is unused and in its original packaging.
Return procedure for IRLMS2002GTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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