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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLMS2002TR

Name: IRLMS2002TR
Brand: Infineon Technologies
SKU: IRLMS2002TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLMS2002TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: IRLMS2002TR.pdf

Description:: MOSFET N-CH 20V 6.5A 6-TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:9,092

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Product details

Overview

IRLMS2002TR from Infineon Technologies (formerly International Rectifier) is a 20 V, 6.5 A N-channel enhancement-mode MOSFET in Micro6™ (SOT-23-6) package, featuring 30 mΩ R_DS(on) at V_GS = 4.5 V and optimized for low-voltage battery management and load switching in space-constrained portable electronics.

For engineers reviewing the IRLMS2002TR datasheet, IRLMS2002TR pinout, IRLMS2002TR application, or IRLMS2002TR equivalent, key selection criteria include its 20 V V_DS, 6.5 A continuous drain current at 25°C, 30 mΩ on-resistance, -55°C to +150°C operating temperature range, and Micro6™ thermal performance enabling 300% higher current vs. standard SOT-23.

Technical Context

This device employs HEXFET® silicon with advanced trench processing to achieve ultra-low R_DS(on) per unit area. Its gate threshold voltage (0.6–1.2 V) supports direct logic-level drive from 2.5 V and 3.3 V microcontrollers, and its 15 nC typical total gate charge enables fast switching with minimal driver loss.

The integrated body diode exhibits 1.2 V forward voltage at 1.7 A and 19 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in DC-DC converters and H-bridge motor drivers without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; suitable for 12 V and lower battery systems with margin.
R_DS(on)	0.030 Ω @ V_GS = 4.5 V - Enables <195 mW conduction loss at 6.5 A, critical for thermally limited PCBs.
I_D (25°C)	6.5 A - Continuous drain current rating under standard ambient conditions; defines maximum steady-state load capability.
Q_g	15 nC typ - Total gate charge determines driver power requirement and switching speed in PWM applications.
V_GS(th)	0.6–1.2 V - Ensures reliable turn-on with 2.5 V logic outputs; eliminates need for level-shifting circuitry.
T_J Range	-55°C to +150°C - Supports operation in automotive cabin, industrial enclosures, and consumer handheld environments.
R_θJA	62.5°C/W - Thermal resistance from junction to ambient on FR-4 board; used to calculate max power dissipation at given T_A.

Pinout & Package

IRLMS2002TR is housed in the Micro6™ package (SOT-23-6), a lead-free surface-mount outline with enhanced thermal and electrical performance over standard SOT-23. Its customized leadframe reduces R_DS(on) by 60% and increases current capacity nearly 3×.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four paralleled drain terminals - reduce package inductance and improve current sharing; connect directly to high-current PCB copper pour.
5	Gate (G)	Control input - requires low-impedance drive due to 15 nC Q_g; layout must minimize trace inductance for clean switching.
6	Source (S)	Power return path - serves as reference for gate drive and body diode cathode; must be low-inductance connection to ground plane.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	30 mΩ @ 4.5 V - Reduces conduction losses by >50% vs. comparable SOT-23 MOSFETs, extending battery runtime in portable devices.
Logic-level gate drive	0.6–1.2 V V_GS(th) - Direct interface with 2.5 V/3.3 V MCUs and FPGAs without external gate drivers or level shifters.
Micro6™ thermal design	62.5°C/W R_θJA - Delivers 3× higher current density than SOT-23, enabling compact designs without heatsinks.
Integrated body diode	1.2 V V_SD @ 1.7 A - Supports freewheeling and reverse current paths in buck converters and half-bridge topologies.

Applications

Smartphone Power Management

USB-C Load Switch

Use Scenario: Controlling power delivery to camera modules and display backlight circuits in smartphones with tight thermal budgets.

IC Role / Device Role: Low-side load switch enabling dynamic power gating of peripheral rails under MCU control.

Use Value: 30 mΩ R_DS(on) limits voltage drop to <200 mV at 6 A, preserving system efficiency while fitting within 2.8 × 2.9 mm PCB footprint.

Use Scenario: Enabling/disabling VBUS power path in USB-C receptacles with overcurrent protection and fast fault response.

IC Role / Device Role: High-speed, low-loss power switch placed between upstream source and downstream port.

Use Value: 15 nC Q_g allows sub-microsecond turn-on/off timing, meeting USB-C specification requirements for hot-plug sequencing.

Bluetooth Earbud Battery Protection

Wearable Sensor Hub Power Gating

Use Scenario: Isolating Li-ion battery from charging circuit during deep discharge or thermal fault conditions.

IC Role / Device Role: Reverse-polarity and over-discharge protection switch in battery pack secondary protection IC interface.

Use Value: -55°C to +150°C operating range ensures reliability across storage, charging, and active use temperatures in compact earbuds.

Use Scenario: Powering motion sensors and environmental monitors only during active data acquisition cycles to extend multi-week battery life.

IC Role / Device Role: Ultra-low-quiescent-load power switch controlled by sensor hub's wake-up signal.

Use Value: 100 nA gate leakage at ±12 V ensures <1 µA standby current, minimizing self-discharge in always-on wearable architectures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 35 mΩ @ 4.5 V; Q_g = 12.5 nC; SOT-23-6 package	Slightly higher conduction loss but lower gate charge - better for high-frequency (>1 MHz) PWM switching	Select when gate drive strength is limited and switching frequency exceeds 500 kHz.
SI2302DS-T1-BE3	R_DS(on) = 45 mΩ @ 4.5 V; V_GS(th) = 0.7–1.3 V; SOT-23-3 package	Higher on-resistance and no dedicated source pin - reduced thermal performance and no Kelvin source sensing	Choose only for cost-sensitive, non-thermal-critical applications where PCB space is less constrained.

Compared with DMN2004LK-7 and SI2302DS-T1-BE3, the IRLMS2002TR delivers the lowest R_DS(on) in Micro6™, enabling highest current density and lowest conduction loss in battery-powered portable designs where thermal headroom is minimal.

Availability

IRLMS2002TR is available at Aetrix Electronics and suitable for smartphone power management, USB-C load switching, and wearable battery protection requiring stable component supply and consistent lead-free Micro6™ packaging.

Supply support for IRLMS2002TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® MOSFET innovation.

The IRLMS2002TR belongs to the HEXFET® Micro6™ family, engineered specifically for ultra-compact, high-efficiency load switching in battery-powered consumer electronics where space, thermal performance, and logic-level drive are critical.

FAQ

What is the maximum safe operating voltage for IRLMS2002TR in continuous DC operation?

The absolute maximum drain-source voltage (V_DS) is 20 V. Operation above this value risks avalanche breakdown and permanent damage. For reliable long-term use, design with ≤16 V DC applied across drain and source, allowing 20% margin for transients and tolerances in 12 V systems.

Can IRLMS2002TR be driven directly from a 3.3 V GPIO without a gate driver?

Yes - its gate threshold voltage (0.6–1.2 V) and low 15 nC total gate charge allow full enhancement with 3.3 V logic. At V_GS = 3.3 V, R_DS(on) is typically 38 mΩ, delivering ~5.5 A continuous current at 25°C, sufficient for most portable load-switch applications.

How does the Micro6™ package improve thermal performance over standard SOT-23?

The Micro6™ package uses a custom leadframe with four paralleled drain pins and optimized copper mass, reducing R_θJA to 62.5°C/W versus ~150°C/W for standard SOT-23. This enables 3× higher current handling (6.5 A vs. ~2.2 A) on identical FR-4 PCB area without heatsinking.

Is the body diode in IRLMS2002TR suitable for reverse-current freewheeling in buck converters?

Yes - the integrated body diode has 1.2 V forward voltage at 1.7 A and 19 ns reverse recovery time, making it suitable for low-power synchronous buck stages up to ~2 A output. For higher currents or faster switching, an external Schottky diode or synchronous FET is recommended.

IRLMS2002TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SOT-23-6

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 30mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1310 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(SOT23-6)

IRLMS2002TR FAQ

1.How can I place an order for IRLMS2002TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLMS2002TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLMS2002TR reliable?

The price and inventory of IRLMS2002TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLMS2002TR is usually 5 days.

3.What payment methods are accepted for IRLMS2002TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLMS2002TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLMS2002TR?

IRLMS2002TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLMS2002TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLMS2002TR?

For technical support, including IRLMS2002TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLMS2002TR requirements.

6.How does Aetrix verify that IRLMS2002TR is sourced from the original manufacturer or authorized distributors?

All IRLMS2002TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLMS2002TR meets industry standards.

7.What is the process for return or replacement of IRLMS2002TR?

All IRLMS2002TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLMS2002TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLMS2002TR part is unused and in its original packaging.

Return procedure for IRLMS2002TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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