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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLMS5703TR

Name: IRLMS5703TR
Brand: Infineon Technologies
SKU: IRLMS5703TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLMS5703TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: IRLMS5703TR.pdf

Description:: MOSFET P-CH 30V 2.3A 6-TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:6,925

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Product details

Overview

IRLMS5703TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® power MOSFET in Micro6™ (SOT-23-6) package, rated for -30 V V_DSS, 0.18 Ω R_DS(on) at V_GS = -4.5 V, and -3.5 A continuous drain current. It serves as a low-side load switch or reverse-polarity protection device in space-constrained DC/DC converters and battery-powered systems.

For engineers reviewing the IRLMS5703TR datasheet, IRLMS5703TR pinout, IRLMS5703TR application, or IRLMS5703TR equivalent, key selection criteria include its -30 V breakdown voltage, 0.18 Ω on-resistance at -4.5 V gate drive, Micro6™ thermal performance enabling ~300% higher current vs SOT-23, and verified body diode recovery characteristics for synchronous rectification and flyback snubbing.

Technical Context

This P-channel MOSFET uses fifth-generation HEXFET® silicon with optimized trench-gate structure to achieve low R_DS(on) per die area while maintaining robust avalanche capability (E_AS = 22 mJ at T_J = 25°C). Its gate threshold voltage (V_GS(th)) ranges from -1.0 V to -2.5 V, ensuring reliable turn-on with logic-level gate drive down to -3.0 V.

The Micro6™ package integrates a customized leadframe that reduces thermal resistance (R_θJA = 125°C/W) and improves power density versus standard SOT-23. The device exhibits fast switching (t_d(on) = 10 ns, t_f = 15 ns) and low gate charge (Q_G = 5.2 nC), supporting high-frequency operation up to 1 MHz in DC/DC controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-30 V - Maximum drain-to-source blocking voltage; supports 24 V rail systems with margin.
R_DS(on) @ V_GS = -4.5 V	0.18 Ω - Enables ≤0.22 W conduction loss at -3.5 A, critical for thermally limited PCB layouts.
I_D (continuous)	-3.5 A - Rated current at T_A = 25°C with 1 in² 2-oz copper; derates to -1.8 A at 70°C ambient.
Q_G	5.2 nC - Low gate charge allows fast switching with minimal driver power loss in high-frequency PWM.
V_GS(th)	-1.0 V to -2.5 V - Ensures full enhancement with standard 3.3 V or 5 V logic outputs without level-shifting.
R_θJA	125°C/W - Thermal resistance enables >1.5 W dissipation in Micro6™ footprint, outperforming SOT-23 by 3×.

Pinout & Package

IRLMS5703TR is housed in the Micro6™ (SOT-23-6) surface-mount package - a 3.0 × 2.8 mm outline with exposed drain pad for enhanced thermal transfer. The package features three parallel drain terminals (Pins 1, 2, 3), one source terminal (Pin 6), and one gate terminal (Pin 5), with Pin 4 internally connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (D)	Drain	Three paralleled drain leads reduce package inductance and improve current sharing; tied to exposed thermal pad.
4 (D)	Drain (internal)	Internally bonded to drain die; not externally accessible but contributes to thermal path.
5 (G)	Gate	Control input; requires <2.5 V negative swing relative to source to fully enhance.
6 (S)	Source	Reference node for gate drive; connects to system ground or positive rail in high-side configurations.

Key Features

Feature	Design Value
Ultra-low R_DS(on) in Micro6™	0.18 Ω at -4.5 V - 60% lower than comparable SOT-23 devices, reducing board area and heat sink need.
Logic-level gate drive	V_GS(th) max -2.5 V - Direct interface with 3.3 V microcontrollers without external level shifters.
Fast switching speed	t_f = 15 ns - Minimizes transition losses in 500 kHz–1 MHz DC/DC topologies.
Robust body diode	t_rr = 45 ns, Q_rr = 19 nC - Supports asynchronous flyback and reverse-current protection without external Schottky.

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-voltage and overcurrent protection in portable Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch in series with battery cathode to block fault currents.

Use Value: 0.18 Ω R_DS(on) limits voltage drop to <0.63 V at 3.5 A, preserving battery runtime and thermal headroom.

Use Scenario: Hot-swap control for USB-C ports delivering up to 20 V/3 A.

IC Role / Device Role / Timing Role: Low-side load switch enabling controlled inrush current and disconnect during fault events.

Use Value: Fast 15 ns fall time ensures <10 µs response to overcurrent signals, meeting USB PD 3.1 fault timing requirements.

DC/DC Converter Synchronous Rectifier

Industrial Sensor Power Switch

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V flyback converters.

IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Body diode forward voltage of -1.2 V (at -1 A) and low Q_rr enable >2% efficiency gain over 40 V Schottky at 500 kHz.

Use Scenario: Remote on/off control of 24 V industrial sensors with ESD and surge immunity.

IC Role / Device Role / Timing Role: High-side power switch isolating sensor supply from main controller during sleep or fault.

Use Value: -30 V V_DSS rating provides 25% margin above 24 V nominal rail, surviving ISO 7637-2 pulse 1 (−100 V transient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SI2301DDS-T1-GE3	R_DS(on) = 0.115 Ω @ -4.5 V; V_DSS = -20 V; smaller 1.6 × 1.6 mm SC-70-6 package.	Limited to ≤16 V systems; unsuitable for 24 V industrial rails due to lower breakdown rating.	Select when board space is critical and operating voltage stays below 15 V.
DMN3026LSD-13	R_DS(on) = 0.22 Ω @ -4.5 V; V_DSS = -30 V; same Micro6™ footprint but higher on-resistance and 7.5 nC Q_G.	Higher switching loss at >500 kHz; acceptable for <200 kHz linear regulators or slow-switching loads.	Select when cost sensitivity outweighs efficiency needs and frequency remains low.

Compared with SI2301DDS-T1-GE3 and DMN3026LSD-13, IRLMS5703TR uniquely balances -30 V rating, 0.18 Ω R_DS(on), and 5.2 nC Q_G in Micro6™, making it optimal for 24 V battery systems requiring both ruggedness and high-frequency efficiency.

Availability

IRLMS5703TR is available at Aetrix Electronics and suitable for battery management systems, USB-C power switches, industrial sensor interfaces, and DC/DC converter designs requiring stable component supply across multi-year production cycles.

Supply support for IRLMS5703TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's legacy HEXFET® power MOSFET product line, designed specifically for high-efficiency, space-constrained DC power conversion and load switching in consumer, computing, and industrial equipment.

FAQ

What is the maximum safe operating junction temperature for IRLMS5703TR?

The absolute maximum junction temperature is 150°C per the datasheet. Derating begins at 25°C ambient, with continuous power dissipation dropping linearly to zero at 150°C junction. For reliable long-term operation in industrial environments, design for ≤125°C max T_J using measured R_θJA and actual board layout thermal data.

Can IRLMS5703TR be used in a high-side configuration with 24 V supply?

Yes - as a P-channel MOSFET, it operates as a high-side switch when gate is pulled below source potential. With V_GS ≤ -4.5 V, R_DS(on) remains 0.18 Ω. However, gate drive must provide ≥5 V negative swing relative to 24 V rail, typically requiring a charge pump or dedicated high-side driver IC.

Does IRLMS5703TR have built-in ESD protection?

No - the device has no integrated ESD protection diodes. Per the datasheet, it is rated to ±1000 V HBM (Human Body Model) and ±200 V MM (Machine Model). External TVS or RC filtering is recommended on gate and drain lines in handheld or connector-exposed applications.

Is the Micro6™ package RoHS-compliant and lead-free?

Yes - IRLMS5703TR is marked "PbF" (lead-free) and complies with RoHS Directive 2011/65/EU. The Micro6™ package uses matte tin plating over copper leadframe, and all materials meet JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) requirements for unlimited floor life at ≤30°C/60% RH.

IRLMS5703TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SOT-23-6

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 200mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(SOT23-6)

IRLMS5703TR FAQ

1.How can I place an order for IRLMS5703TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLMS5703TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLMS5703TR reliable?

The price and inventory of IRLMS5703TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLMS5703TR is usually 5 days.

3.What payment methods are accepted for IRLMS5703TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLMS5703TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLMS5703TR?

IRLMS5703TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLMS5703TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLMS5703TR?

For technical support, including IRLMS5703TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLMS5703TR requirements.

6.How does Aetrix verify that IRLMS5703TR is sourced from the original manufacturer or authorized distributors?

All IRLMS5703TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLMS5703TR meets industry standards.

7.What is the process for return or replacement of IRLMS5703TR?

All IRLMS5703TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLMS5703TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLMS5703TR part is unused and in its original packaging.

Return procedure for IRLMS5703TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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