My Inquiry
My Account
Infineon Technologies IRLMS5703TRPBF
- Part No.:
- IRLMS5703TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6
- Datasheet:
-
IRLMS5703TRPBF.pdf
- Description:
- MOSFET P-CH 30V 2.4A MICRO6
- Quantity:
- Payment:
- Shipping:
Inventory:9,003
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRLMS5703TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® power MOSFET in Micro6™ (SOT-23-6) package, rated for -30V VDSS, 0.18Ω RDS(on) at VGS = -4.5V, and -3.8A continuous drain current. It serves as a low-side load switch or reverse-polarity protection device in space-constrained DC/DC converters, USB power switches, and battery management circuits.
For engineers reviewing the IRLMS5703TRPBF datasheet, IRLMS5703TRPBF pinout, IRLMS5703TRPBF application, or IRLMS5703TRPBF equivalent, key selection criteria include verified RDS(on) at logic-level gate drive (-4.5V), thermal performance in Micro6™ package, SOA compliance under pulsed load conditions, and body diode forward voltage for reverse-current paths.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve low on-resistance per die area while maintaining fast switching speed (td(on) ≈ 10 ns, tf ≈ 15 ns) and robust avalanche ruggedness. Its P-channel configuration enables high-side or low-side switching without level-shifting circuitry when driven from 3.3V or 5V logic.
The device features an integrated body diode with VSD = 1.2V at -1.6A and exhibits normalized RDS(on) drift of ≤1.4× from 25°C to 150°C junction temperature, supporting stable operation in thermally demanding environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30V - Maximum blocking voltage in reverse-biased drain-source path; defines safe operating range for 24V rail protection. |
| RDS(on) @ VGS = -4.5V | 0.18Ω - Confirmed on-resistance enabling ≤0.65W conduction loss at -3.8A; critical for thermal budget in compact PCB layouts. |
| ID (continuous) | -3.8A - Max DC current at TA = 25°C with 1in² 2-layer copper; supports sustained load switching in portable power rails. |
| QG (total gate charge) | 8.2nC - Low gate drive energy requirement; allows efficient control using microcontroller GPIOs without external drivers. |
| VGS(th) | -1.0V to -2.5V - Guaranteed turn-on threshold at logic-compatible gate voltages; ensures reliable activation from 3.3V systems. |
| Body diode VSD | 1.2V @ -1.6A - Forward voltage drop determines power dissipation during reverse-current conduction in battery backup paths. |
| PD (TA = 25°C) | 1.25W - Package-limited power dissipation; requires thermal relief pads for >1W steady-state operation. |
Pinout & Package
IRLMS5703TRPBF is housed in the Micro6™ (SOT-23-6) surface-mount package - a leaded, thermally enhanced variant of SOT-23 with six terminals and optimized thermal resistance (RθJA = 125°C/W). Its footprint reduces board area by ~30% versus standard SOT-23 while delivering up to 3× higher current capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main high-current output terminal; electrically connected to exposed drain pad for thermal conduction to PCB. |
| 2 (D) | Drain | Second drain connection; paralleled internally with Pin 1 to reduce package inductance and improve current sharing. |
| 3 (D) | Drain | Third drain connection; completes triple-drain configuration for lower RDS(on) and improved thermal spreading. |
| 4 (S) | Source | Reference node for gate drive; tied to system ground or negative rail in low-side switch configurations. |
| 5 (G) | Gate | Control input; requires <1µA leakage current and tolerates ±20V transient stress per datasheet. |
| 6 (D) | Drain | Fourth drain connection; all four D pins are internally bonded to same die region for uniform current distribution. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at VGS = -3.0V; eliminates need for gate driver ICs in 3.3V microcontroller interfaces. |
| Micro6™ package thermal performance | RθJA = 125°C/W with 1in² 2-layer copper; enables 1.25W dissipation without heatsink in handheld designs. |
| Low gate charge | QG = 8.2nC at VGS = -10V; reduces switching losses and EMI in 500kHz–1MHz DC/DC applications. |
| Enhanced avalanche rating | EAS = 32mJ at TJ = 25°C; withstands inductive kickback in relay driving and motor commutation. |
| Lead-free and RoHS compliant | Meets JEDEC J-STD-020 moisture sensitivity level 1; suitable for lead-free reflow assembly without preconditioning. |
Applications
| USB Power Switch | Battery Reverse Polarity Protection |
|---|---|
Use Scenario: Controlling 5V power delivery to downstream peripherals via USB Type-A port with overcurrent detection. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as active OR-ing switch; enables/disables VBUS path based on host controller signal. Use Value: 0.18Ω RDS(on) limits voltage drop to <0.7V at 3.5A, preserving USB 2.0 voltage compliance while reducing heat generation vs. discrete diode solutions. | Use Scenario: Preventing damage when Li-ion battery packs are inserted backward into portable medical devices. IC Role / Device Role / Timing Role: Reverse-voltage blocking element placed between battery connector and system PMIC input. Use Value: -30V VDSS provides 2× margin over 12V nominal battery stacks; body diode orientation blocks reverse current without external components. |
| DC/DC Converter Synchronous Rectifier | Industrial Sensor Node Power Gating |
Use Scenario: Replacing Schottky diode in buck converter secondary side for improved efficiency in 3.3V/1A point-of-load regulator. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by PWM signal phase-aligned with high-side switch. Use Value: QG = 8.2nC enables clean turn-off before cross-conduction; RDS(on) cuts conduction loss by 65% versus 0.5V-drop diode at full load. | Use Scenario: Isolating power to MEMS pressure sensor and ADC during sleep mode in wireless IoT node. IC Role / Device Role / Timing Role: Load switch enabling zero-quiescent-current shutdown of analog front-end subsystem. Use Value: Gate threshold of -1.0V ensures full enhancement at 2.8V supply; leakage <1µA preserves battery life over multi-year deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI3457DV-T1-GE3 | RDS(on) = 0.22Ω @ -4.5V; higher gate charge (10.5nC); same Micro6™ package. | Slightly lower current rating (-3.2A); less suitable for 3.5A USB PD applications. | Prefer when cost sensitivity outweighs 0.04Ω RDS(on) penalty and thermal margin is ample. |
| DMN3026LSD-13 | RDS(on) = 0.19Ω @ -4.5V; SO-8 package; higher thermal resistance (RθJA = 150°C/W). | Requires larger PCB area; better suited for industrial boards where layout density is less constrained. | Select when board-level reliability demands wider creepage/clearance or dual-source availability is required. |
Compared with SI3457DV-T1-GE3 and DMN3026LSD-13, IRLMS5703TRPBF delivers the lowest RDS(on) in Micro6™ form factor and best thermal performance per mm², making it optimal for ultra-compact battery-powered systems requiring sub-1W dissipation.
Availability
IRLMS5703TRPBF is available at Aetrix Electronics and suitable for USB power delivery modules, battery management subsystems, industrial sensor nodes, and DC/DC converter synchronous rectification requiring stable component supply across production lifecycles.
Supply support for IRLMS5703TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with headquarters in Munich, Germany.
This part belongs to Infineon's legacy HEXFET® power MOSFET product line, designed specifically for high-efficiency, space-constrained DC power control in consumer, computing, and portable electronics.
FAQ
What is the maximum safe operating junction temperature for IRLMS5703TRPBF?
The absolute maximum junction temperature is 150°C per the official Infineon datasheet. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating is required above 25°C ambient: continuous power must be reduced linearly to zero at 150°C case temperature when using standard 1in² 2-layer copper PCB layout.
Can IRLMS5703TRPBF be used in high-side switch configurations?
Yes - its P-channel architecture supports high-side switching, but gate drive must be referenced to the source (i.e., require a floating or charge-pump-based gate driver to achieve VGS ≤ -4.5V relative to source potential). Direct microcontroller connection is only viable in low-side configurations due to ground-referenced logic levels.
Does IRLMS5703TRPBF have built-in ESD protection?
No - the device lacks integrated ESD protection diodes. Per Infineon's application note AN-1001, external TVS diodes (e.g., SMAJ5.0A) are recommended on gate and drain lines when exposed to human-body-model (HBM) >2kV environments. Gate oxide rupture risk exists if VGS exceeds ±20V during handling or transient events.
How does the Micro6™ package compare thermally to standard SOT-23?
Micro6™ reduces RθJA by ~40% versus standard SOT-23 (125°C/W vs. ~210°C/W) due to triple-drain leads and enhanced copper slug design. This enables nearly 3× higher current capacity at the same temperature rise - confirmed by Infineon's thermal imaging data showing 45°C/W lower RθJC in identical PCB layouts.
IRLMS5703TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro6™(TSOP-6)
IRLMS5703TRPBF FAQ
1.How can I place an order for IRLMS5703TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLMS5703TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLMS5703TRPBF reliable?
The price and inventory of IRLMS5703TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLMS5703TRPBF is usually 5 days.
3.What payment methods are accepted for IRLMS5703TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLMS5703TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLMS5703TRPBF?
IRLMS5703TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLMS5703TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLMS5703TRPBF?
For technical support, including IRLMS5703TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLMS5703TRPBF requirements.
6.How does Aetrix verify that IRLMS5703TRPBF is sourced from the original manufacturer or authorized distributors?
All IRLMS5703TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLMS5703TRPBF meets industry standards.
7.What is the process for return or replacement of IRLMS5703TRPBF?
All IRLMS5703TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLMS5703TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLMS5703TRPBF part is unused and in its original packaging.
Return procedure for IRLMS5703TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRLMS5703TRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
