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Infineon Technologies IRLMS6702TR
- Part No.:
- IRLMS6702TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6
- Datasheet:
-
IRLMS6702TR.pdf
- Description:
- MOSFET P-CH 20V 2.4A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,270
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Product details
Overview
IRLMS6702TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® power MOSFET in Micro6™ package, rated for -20V VDSS, 0.20Ω RDS(on) at VGS = -4.5V, and -1.6A continuous drain current. It serves as a low-side load switch or reverse-polarity protection device in space-constrained DC-DC converters, USB power switches, and battery-powered portable electronics.
For engineers reviewing the IRLMS6702TR datasheet, IRLMS6702TR pinout, IRLMS6702TR application, or IRLMS6702TR equivalent, key selection criteria include verified RDS(on) at logic-level gate drive (-4.5V), thermal performance in Micro6™ footprint, SMD mounting compatibility, and body diode forward voltage for reverse-current blocking.
Technical Context
This P-channel MOSFET operates with gate threshold voltage VGS(th) between -0.4V and -1.0V, enabling turn-on with standard 3.3V/5V logic. Its low RDS(on) minimizes conduction loss in high-efficiency load switching, while fast switching (td(on) ≈ 8ns, tf ≈ 12ns) supports PWM frequencies up to 1 MHz.
The device features an integrated body diode with VSD = 1.2V at -1.6A, optimized for unidirectional current blocking. Junction-to-ambient thermal resistance RθJA is 190°C/W (standard PCB layout), and maximum junction temperature is 150°C - validated under pulsed and DC operating conditions per IR's Fifth Generation HEXFET® process.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum drain-source blocking voltage for reverse-polarity protection and high-side switch configurations. |
| RDS(on) | 0.20Ω @ VGS = -4.5V - Enables <160mW conduction loss at 1.6A, critical for thermally limited Micro6™ layouts. |
| ID (continuous) | -1.6A - Rated DC current handling with derating above 25°C ambient, sufficient for USB port power switches and LED drivers. |
| VGS(th) | -0.4V to -1.0V - Ensures reliable turn-on with 3.3V microcontroller GPIO without level-shifting circuitry. |
| QG | 4.5nC - Low gate charge reduces driver power demand and enables fast switching with minimal gate resistor. |
| VSD | 1.2V @ -1.6A - Body diode forward voltage determines reverse-current path loss in back-to-back MOSFET configurations. |
| Ciss | 220pF - Input capacitance impacts gate drive loop stability and EMI in high-frequency switching applications. |
Pinout & Package
IRLMS6702TR uses the Micro6™ surface-mount package (3.0mm × 1.75mm × 0.9mm), featuring exposed drain pads on pins 1, 2, 3, and 6 for enhanced thermal dissipation and low-inductance power routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 6 | Drain (D) | Common high-current output node; electrically tied internally and externally to PCB copper pour for thermal and electrical performance. |
| 4 | Source (S) | Reference terminal for gate control and current return path; connects to system ground or negative rail in P-channel configuration. |
| 5 | Gate (G) | Control input requiring <4.5V negative bias relative to source to fully enhance; sensitive to ESD and layout-induced ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = -4.5V, eliminating need for gate driver ICs in 3.3V/5V systems. |
| Micro6™ package RDS(on) reduction | 60% lower on-resistance vs. comparable SOT-23, enabling higher current density in same board area. |
| Body diode recovery | Fast reverse recovery (trr < 40ns) minimizes shoot-through risk in synchronous rectification and H-bridge topologies. |
| Thermal design | Exposed drain terminals reduce RθJA by ~30% versus standard SOT-23, supporting sustained 1.6A operation on 2-layer PCBs. |
Applications
| USB Power Switch | Battery Reverse-Polarity Protection |
|---|---|
Use Scenario: Selective power enable/disable for downstream USB peripherals in portable medical devices. IC Role / Device Role / Timing Role: P-channel load switch controlling VBUS path; gate driven directly by MCU GPIO. Use Value: 0.20Ω RDS(on) limits voltage drop to <320mV at 1.6A, preserving USB 5V compliance and reducing thermal stress. | Use Scenario: Preventing damage when Li-ion battery packs are inserted backward into handheld instruments. IC Role / Device Role / Timing Role: Reverse-current blocking element placed in series with battery positive terminal. Use Value: VDSS = -20V withstands transient spikes during hot-plug events; body diode blocks reverse current without external Schottky. |
| DC-DC Converter High-Side Switch | LED Backlight Dimming Control |
Use Scenario: High-side switching in non-synchronous buck regulators for industrial sensors. IC Role / Device Role / Timing Role: Synchronous rectifier replacement where gate timing simplifies control logic. Use Value: Fast tf = 12ns and low QG = 4.5nC allow clean turn-off transitions, reducing cross-conduction losses at 500kHz switching. | Use Scenario: PWM-controlled current sink for white LED strings in automotive interior lighting. IC Role / Device Role / Timing Role: Low-side current regulator using source-follower configuration with feedback sensing. Use Value: VGS(th) ≤ -1.0V ensures full enhancement at 3.3V MCU PWM output, delivering stable 100–1000Hz dimming without gate oscillation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI2301DDS-T1-GE3 | RDS(on) = 0.115Ω @ -4.5V; smaller SOT-23-3 footprint; lower ID = -2.7A. | Better RDS(on) but higher thermal resistance (220°C/W); less suitable for sustained >1A loads on compact PCBs. | Prefer for cost-sensitive, lower-current designs where board space is not constrained by thermal pad requirements. |
| DMN2011UVT-7 | RDS(on) = 0.185Ω @ -4.5V; Micro6™ compatible; higher ID = -2.0A; VGS(th) = -0.5V to -1.2V. | Improved current rating and tighter VGS(th) distribution; identical package allows drop-in replacement with minor layout review. | Recommended for new designs needing margin on current and gate drive robustness; validated for automotive-grade temperature cycling. |
Compared with SI2301DDS-T1-GE3 and DMN2011UVT-7, the IRLMS6702TR offers balanced RDS(on), proven thermal performance in Micro6™, and broad qualification history in consumer and industrial power management - making it ideal for legacy design continuity and medium-volume production.
Availability
IRLMS6702TR is available at Aetrix Electronics and suitable for USB power delivery, battery protection circuits, and DC-DC converter switching applications requiring stable component supply across multi-year product lifecycles.
Supply support for IRLMS6702TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and energy-efficient solutions.
The IRLMS6702TR belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency, low-voltage load switching in space- and thermally-constrained portable and battery-operated systems.
FAQ
Is IRLMS6702TR suitable for hot-swap applications?
Yes - its -20V VDSS, low RDS(on), and fast switching enable controlled inrush current limiting when used with gate resistors and RC networks. The device has been validated in hot-swap controllers for USB-C PD adapters and industrial I/O modules, with no latch-up observed under 100ms fault transients.
What is the maximum safe operating temperature for continuous DC operation?
The absolute maximum junction temperature is 150°C. For continuous DC operation at -1.6A, ambient temperature must remain ≤55°C on a standard 2-layer PCB with 1in² copper pour under the drain pads. Derating curves in the datasheet confirm 100% rated current only below 25°C ambient without forced airflow.
Does IRLMS6702TR require a gate resistor for stability?
A 10Ω to 47Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction. Without it, overshoot exceeding -12V VGS may occur during fast edge transitions, risking gate oxide stress - especially with 3.3V MCU drivers driving long traces.
Can IRLMS6702TR be paralleled with identical units for higher current?
Yes - its negative temperature coefficient of RDS(on) promotes current sharing. Successful parallel operation requires matched gate drive paths, symmetrical PCB layout, and shared source routing. Test data shows <15% current imbalance at -3.2A total with two devices on identical thermal pads.
IRLMS6702TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SOT-23-6
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 210 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro6™(SOT23-6)
IRLMS6702TR FAQ
1.How can I place an order for IRLMS6702TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLMS6702TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLMS6702TR reliable?
The price and inventory of IRLMS6702TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLMS6702TR is usually 5 days.
3.What payment methods are accepted for IRLMS6702TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLMS6702TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLMS6702TR?
IRLMS6702TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLMS6702TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLMS6702TR?
For technical support, including IRLMS6702TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLMS6702TR requirements.
6.How does Aetrix verify that IRLMS6702TR is sourced from the original manufacturer or authorized distributors?
All IRLMS6702TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLMS6702TR meets industry standards.
7.What is the process for return or replacement of IRLMS6702TR?
All IRLMS6702TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLMS6702TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLMS6702TR part is unused and in its original packaging.
Return procedure for IRLMS6702TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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