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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLMS6702TRPBF

Name: IRLMS6702TRPBF
Brand: Infineon Technologies
SKU: IRLMS6702TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLMS6702TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: IRLMS6702TRPBF.pdf

Description:: MOSFET P-CH 20V 2.4A MICRO6

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Product details

Overview

IRLMS6702TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® power MOSFET in Micro6™ (SOT-23-6) package, rated for -20V V_DSS, 0.20Ω R_DS(on) at V_GS = -4.5V, and -1.6A continuous drain current. It delivers high current density in ultra-compact PCB space and is used in load switching, battery protection, and DC-DC converter synchronous rectification.

For engineers reviewing the IRLMS6702TRPBF datasheet, IRLMS6702TRPBF pinout, IRLMS6702TRPBF application, or IRLMS6702TRPBF equivalent, key selection criteria include verified R_DS(on) at low gate drive (-4.5V), thermal performance in Micro6™ package, body diode forward voltage, reverse recovery characteristics, and SOA limits under pulsed operation.

Technical Context

This device operates as a single P-channel power switch with gate-controlled depletion-mode turn-off behavior. Its low R_DS(on) enables efficient operation at gate voltages as low as -2.5V, and its optimized body diode supports bidirectional current flow in buck converter high-side configurations.

The Micro6™ package integrates three drain terminals (pins 1, 2, 4) and one source terminal (pin 5), enabling low-inductance, high-current routing. Thermal resistance R_θJA is 190°C/W (typical), validated under JEDEC-standard PCB layout conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-20V - Maximum drain-to-source blocking voltage before avalanche conduction.
R_DS(on) @ V_GS = -4.5V	0.20Ω - On-resistance defining conduction loss at standard logic-level gate drive.
I_D (continuous)	-1.6A - Max DC drain current limited by package thermal dissipation at T_A = 25°C.
Q_G (total gate charge)	4.2nC - Gate drive energy required for full turn-on; impacts switching loss and driver sizing.
V_GS(th)	-1.0V to -2.5V - Threshold voltage range where device begins conducting; critical for low-voltage control compatibility.
Body diode V_SD	0.85V @ I_S = -1.6A - Forward voltage drop of intrinsic source-drain diode; affects efficiency in freewheeling paths.
t_r/t_f	12ns/15ns - Rise/fall times measured under standardized 1.6A resistive load; defines hard-switching speed capability.

Pinout & Package

IRLMS6702TRPBF uses the Micro6™ (SOT-23-6) surface-mount package: 1.75mm × 2.80mm footprint, 1.06mm height, thermally enhanced leadframe with three parallel drain pins for reduced resistance and inductance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4 - D	Drain	Three electrically connected drain terminals; share current path and reduce effective R_DS(on) and L_PD.
3 - G	Gate	Control input; requires negative V_GS relative to source to turn on; threshold confirmed at -1.0V to -2.5V.
5 - S	Source	Reference node for gate drive and current return; tied to system ground or positive rail depending on topology.
6 - D	Drain	Fourth drain connection; all four drain pins (1,2,4,6) are internally bonded and function identically.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Full enhancement at V_GS = -4.5V; usable down to -2.5V - eliminates need for gate boosters in 3.3V systems.
Micro6™ package current density	~3× higher current handling vs. SOT-23 - enables compact load switches without thermal derating penalties.
Low gate charge (Q_G)	4.2nC - reduces driver power consumption and EMI during fast transitions.
Optimized body diode	Soft reverse recovery (t_rr ~100ns) and low V_SD - minimizes losses in synchronous buck and OR-ing applications.

Applications

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse-polarity and overcurrent protection in portable Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch between battery anode and system load.

Use Value: 0.20Ω R_DS(on) limits voltage drop to <100mV at 500mA, preserving battery runtime and enabling accurate current sensing.

Use Scenario: Hot-swap and short-circuit protection for USB Type-A downstream ports.

IC Role / Device Role / Timing Role: Load switch controlling VBUS delivery with fast fault response.

Use Value: 4.2nC Q_G allows sub-1µs turn-off using standard GPIO, meeting USB 2.0 hot-plug timing requirements.

DC-DC Synchronous Rectifier

Industrial Sensor Node Power Control

Use Scenario: High-efficiency buck converter output stage in 3.3V/5V point-of-load supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode.

Use Value: Body diode V_SD = 0.85V reduces conduction loss by >40% vs. 0.45V Schottky at 1A, improving light-load efficiency.

Use Scenario: Power gating for wireless sensor modules (BLE/Zigbee) during sleep mode.

IC Role / Device Role / Timing Role: Ultra-low-quiescent current enable switch isolating subsystems.

Use Value: Gate leakage <100nA ensures <1µA total shutdown current, extending 10-year battery life in IoT edge nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SI2301DDS-T1-GE3	R_DS(on) = 0.115Ω @ -4.5V; lower V_GS(th) (-0.7V typ); smaller Q_G (3.0nC)	Better efficiency at <1A; tighter V_GS(th) tolerance improves consistency in battery cutoff circuits.	Preferred when minimizing conduction loss below 1A is critical and board space permits same Micro6™ footprint.
DMN2011UW-7	R_DS(on) = 0.22Ω @ -4.5V; higher I_D rating (-2.0A); slightly larger Q_G (5.1nC)	Higher current headroom supports transient surges in motor driver precharge circuits.	Chosen when design requires margin above 1.6A continuous or needs extended SOA under 10ms pulses.

Compared with SI2301DDS-T1-GE3 and DMN2011UW-7, IRLMS6702TRPBF offers balanced R_DS(on), gate charge, and thermal robustness - making it optimal for cost-sensitive, space-constrained consumer power management where 1.6A steady-state current is sufficient.

Availability

IRLMS6702TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC synchronous rectifiers, and industrial sensor node power control requiring stable component supply across production lifecycles.

Supply support for IRLMS6702TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The HEXFET® product line was engineered specifically for high-efficiency, high-density power conversion - emphasizing low R_DS(on), fast switching, and rugged SOA in miniature packages like Micro6™.

FAQ

Is IRLMS6702TRPBF suitable for 3.3V microcontroller gate drive?

Yes. With V_GS(th) as low as -1.0V and full enhancement at -4.5V, it reliably turns on using 3.3V logic referenced to its source. Verified R_DS(on) = 0.20Ω at -4.5V ensures minimal conduction loss in 3.3V GPIO-driven load switches without level-shifting circuitry.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 150°C. Under standard JEDEC 2-layer PCB conditions, continuous I_D = -1.6A is rated at T_A = 25°C. Derating begins at ~0.012A/°C above 25°C ambient, reaching zero current at ~167°C ambient - but practical design limits junction temperature to ≤125°C for long-term reliability.

Does IRLMS6702TRPBF have avalanche rating?

No. The datasheet does not specify unclamped inductive switching (UIS) or avalanche energy rating. It is not designed for repetitive avalanche operation. Designers must ensure voltage transients remain within the -20V V_DSS limit using snubbers or clamping circuits in inductive load applications.

Can pins 1, 2, 4, and 6 be used independently?

No. Pins 1, 2, 4, and 6 are internally connected to the same drain node. They must be routed to the same net - typically a high-current copper pour - to realize the full benefit of reduced resistance and inductance. Using them separately violates the package design and risks bond-wire failure.

IRLMS6702TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 1.6A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 8.8 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro6™(TSOP-6)

IRLMS6702TRPBF FAQ

1.How can I place an order for IRLMS6702TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLMS6702TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLMS6702TRPBF reliable?

The price and inventory of IRLMS6702TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLMS6702TRPBF is usually 5 days.

3.What payment methods are accepted for IRLMS6702TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLMS6702TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLMS6702TRPBF?

IRLMS6702TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLMS6702TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLMS6702TRPBF?

For technical support, including IRLMS6702TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLMS6702TRPBF requirements.

6.How does Aetrix verify that IRLMS6702TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLMS6702TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLMS6702TRPBF meets industry standards.

7.What is the process for return or replacement of IRLMS6702TRPBF?

All IRLMS6702TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLMS6702TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLMS6702TRPBF part is unused and in its original packaging.

Return procedure for IRLMS6702TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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