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Infineon Technologies IRLR014NTRPBF

Part No.:
IRLR014NTRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR014NTRPBF.pdf
Description:
MOSFET N-CH 55V 10A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,005

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Product details

Overview

IRLR014NTRPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 10 A logic-level N-channel Power MOSFET in D-Pak (TO-252) package, featuring RDS(on) = 0.14 Ω @ VGS = 10 V and 0.21 Ω @ VGS = 4.5 V, fully avalanche-rated, and optimized for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRLR014NTRPBF datasheet, IRLR014NTRPBF pinout, IRLR014NTRPBF application, or IRLR014NTRPBF equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 4.5 V, fast switching (tr = 47 ns, tf = 23 ns), and rugged unclamped inductive switching capability (EAS = 35 mJ).

Technical Context

This HEXFET device uses fifth-generation silicon process technology to achieve high current density and low conduction loss while maintaining robust safe operating area (SOA) up to 100 V and 10 A in pulse mode. Its internal source/drain inductances (LS = 7.5 nH, LD = 4.5 nH) and low Crss (38 pF) support clean, high-speed switching with minimal Miller-induced turn-on risk.

The MOSFET integrates a co-packaged body diode with VSD = 1.3 V @ IS = 6 A and fast reverse recovery (trr = 37–56 ns, Qrr = 48–71 nC), enabling efficient synchronous rectification and flyback operation without external diode supplementation in many mid-power topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55 V - Maximum blocking voltage; supports 48 V nominal bus systems with 15% margin.
RDS(on) @ 10 V0.14 Ω - Enables ≤1.4 W conduction loss at 10 A DC, suitable for continuous-duty thermal design.
RDS(on) @ 4.5 V0.21 Ω - Confirmed logic-level drive compatibility with 3.3 V/5 V microcontrollers and gate drivers.
Qg7.9 nC - Low total gate charge reduces driver power demand and enables >500 kHz PWM operation.
EAS35 mJ - Single-pulse avalanche energy rating allows reliable unclamped inductive switching in motor drives.
tr/tf47 ns / 23 ns - Fast edge rates minimize switching losses in hard-switched SMPS and half-bridge configurations.
Thermal RθJC5.3 °C/W - Junction-to-case resistance enables direct heatsink mounting for 28 W PD dissipation.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; compatible with vapor-phase, infrared, and wave soldering.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)Control input (G)High-impedance MOSFET gate; requires <7.9 nC charge for full enhancement; logic-level compatible.
Pin 3 (Drain)Power output (D)Exposed metal pad on underside - primary current path and thermal interface to PCB copper or heatsink.

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.0–2.0 V ensures full enhancement with 3.3 V or 5 V controllers without level-shifting.
Fully avalanche-ratedRated for 35 mJ single-pulse and 2.8 mJ repetitive avalanche energy - eliminates need for snubbers in inductive loads.
Low gate chargeQg = 7.9 nC minimizes driver losses and enables high-frequency (>300 kHz) operation in compact converters.
Lead-free and RoHS-compliant"PbF" suffix confirms lead-free termination and compliance with EU RoHS Directive 2011/65/EU.
Optimized body diodetrr = 37–56 ns and Qrr = 48–71 nC support efficient synchronous rectification and reduce EMI in flyback designs.

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: 12 V–48 V input, 3.3 V/5 V/12 V output buck regulator in industrial PLCs and embedded power modules.

IC Role / Device Role / Timing Role: High-side or low-side synchronous switch; handles peak currents up to 10 A with <1.4 W conduction loss.

Use Value: RDS(on) = 0.14 Ω @ 10 V and fast tf = 23 ns reduce total power loss and improve efficiency above 92% at 5 A load.

Use Scenario: H-bridge or half-bridge control of 24 V brushed motors in robotics, HVAC actuators, and medical pumps.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge; withstands back-EMF spikes via 35 mJ avalanche rating.

Use Value: Fully rated for unclamped inductive switching - eliminates external TVS/clamp diodes and simplifies board layout.

Hot-Swap ControllerLoad Switch for FPGA/ASIC Core Rails

Use Scenario: Inrush-limited 5 V/12 V hot-swap circuit protecting backplane slots and modular power supplies.

IC Role / Device Role / Timing Role: Main pass element; controlled turn-on via gate resistor to limit dI/dt during insertion.

Use Value: Low RDS(on) = 0.21 Ω @ 4.5 V ensures <0.5 V drop at 2 A, preserving rail accuracy and minimizing heat rise.

Use Scenario: Sequenced core voltage enable (e.g., 1.2 V, 1.8 V) for FPGAs and SoCs requiring precise power-up timing and low quiescent loss.

IC Role / Device Role / Timing Role: High-side load switch; driven directly by 3.3 V GPIO with no external level shifter.

Use Value: VGS(th) ≤ 2.0 V and Qg = 7.9 nC allow clean, sub-microsecond turn-on with minimal overshoot or shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR2905TRPBFRDS(on) = 0.075 Ω @ 10 V, higher ID = 18 A, larger die sizeBetter for >12 A continuous loads; higher capacitance (Ciss = 520 pF) limits max frequencySelect when lower conduction loss outweighs switching speed requirements.
STP55NF06LRDS(on) = 0.022 Ω @ 10 V, but VGS(th) = 1–2.5 V; TO-220 packageHigher current capability (55 A), but through-hole mounting and larger footprintPrefer for prototyping or high-current legacy designs where D-Pak is not feasible.

Compared with IRLR2905TRPBF and STP55NF06L, the IRLR014NTRPBF offers optimal balance of logic-level drive, D-Pak footprint, and 10 A capability - making it ideal for space-constrained, medium-power industrial SMPS and motor control where thermal performance and gate drive simplicity are prioritized over ultra-low RDS(on).

Availability

IRLR014NTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, hot-swap circuits, and FPGA core rail load switching requiring stable component supply and long-term industrial availability.

Supply support for IRLR014NTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line was originally developed by International Rectifier and continues under Infineon to deliver high-efficiency, rugged, and thermally optimized discrete power switches for industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR014NTRPBF supports 7.1 A continuous drain current at TC = 100°C with VGS = 10 V, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be validated against actual PCB copper area and airflow in the target application.

Does this MOSFET require a gate resistor for stability in switching applications?

Yes - a series gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to dv/dt coupling. The device's low Qgd/Qgs ratio (4.4 nC / 1.4 nC) improves Miller immunity, but external RG remains essential for reliable hard-switching operation.

Can the body diode be used for freewheeling in a synchronous buck converter?

Yes - the integrated body diode has VSD = 1.3 V @ 6 A and trr = 37–56 ns, making it usable for low-frequency (<100 kHz) freewheeling. However, for synchronous rectification above 200 kHz, an external Schottky diode or second MOSFET is preferred to minimize conduction and recovery losses.

Is the "PbF" suffix sufficient to confirm RoHS compliance?

Yes - the "PbF" suffix in IRLR014NTRPBF explicitly denotes lead-free termination and full compliance with EU RoHS Directive 2011/65/EU. Infineon's material declarations confirm homogeneous lead content <1000 ppm across all package elements, including solder plating and mold compound.

IRLR014NTRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
140mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.9 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
265 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
28W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRLR014NTRPBF FAQ

1.How can I place an order for IRLR014NTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR014NTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR014NTRPBF reliable?

The price and inventory of IRLR014NTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR014NTRPBF is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR014NTRPBF transactions.

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IRLR014NTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR014NTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR014NTRPBF?

For technical support, including IRLR014NTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR014NTRPBF requirements.

6.How does Aetrix verify that IRLR014NTRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR014NTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR014NTRPBF meets industry standards.

7.What is the process for return or replacement of IRLR014NTRPBF?

All IRLR014NTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR014NTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR014NTRPBF part is unused and in its original packaging.

Return procedure for IRLR014NTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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