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Infineon Technologies IRLR024NPBF

Part No.:
IRLR024NPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR024NPBF.pdf
Description:
MOSFET N-CH 55V 17A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,013

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Product details

Overview

IRLR024NPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in D-Pak surface-mount package, rated for 55 V V(BR)DSS, 17 A continuous drain current at 25°C, and 0.065 Ω RDS(on) at VGS = 10 V. It features fully avalanche-rated ruggedness, fast switching (td(on) = 7.1 ns, tf = 29 ns), and is optimized for DC-DC converters, motor control, and load switching in industrial and automotive power stages.

For engineers reviewing the IRLR024NPBF datasheet, IRLR024NPBF pinout, IRLR024NPBF application, or IRLR024NPBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low thermal resistance (RθJC = 3.3 °C/W), body diode recovery performance (trr = 60–90 ns), and lead-free RoHS-compliant packaging.

Technical Context

This HEXFET® device uses fifth-generation silicon process technology to minimize RDS(on) per die area while maintaining high avalanche energy rating (EAS = 68 mJ). Its internal structure integrates low-inductance source (LS = 7.5 nH) and drain (LD = 4.5 nH) parasitics to support clean high-speed switching.

The MOSFET operates with a transconductance (gfs) of 8.3 S at VDS = 25 V and ID = 11 A, and exhibits stable threshold voltage drift (ΔV(BR)DSS/ΔTJ = 0.061 V/°C), enabling reliable operation across –55°C to +175°C junction temperature range.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS55 V - Maximum blocking voltage before avalanche conduction; defines upper limit for DC bus or flyback clamp applications.
RDS(on)0.065 Ω @ VGS = 10 V - On-resistance directly determines conduction loss in high-current paths (e.g., 17 A yields ~18.5 W worst-case I²R loss).
ID (TC = 25°C)17 A - Continuous drain current rating under ideal heatsinking; derates linearly by 0.3 W/°C above 25°C case temperature.
Qg / Qgd15 nC / 8.5 nC - Total and Miller gate charge values govern driver strength requirements and switching transition times in hard-switched topologies.
trr / Qrr60–90 ns / 130–200 nC - Body diode reverse recovery characteristics impact shoot-through risk and EMI in synchronous rectification and H-bridge circuits.
EAS68 mJ - Single-pulse avalanche energy rating enables robust unclamped inductive switching without external snubbers in relay/motor drive designs.

Pinout & Package

The IRLR024NPBF is housed in a D-Pak (TO-252AA) surface-mount package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain pad provides low thermal resistance path to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current sink terminalElectrically connected to exposed metal tab; must be soldered to large copper pour for thermal and electrical integrity.
Source (Pin 1)Reference node for gate drive and current returnLow-inductance connection point (LS = 7.5 nH); critical for minimizing gate loop oscillation during fast switching.
Gate (Pin 2)Control electrode for channel formationLogic-compatible input requiring ≤2.0 V threshold; total gate charge (15 nC) dictates minimum driver peak current for <100 ns transitions.

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.0–2.0 V enables direct interface with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
Fully avalanche rated68 mJ single-pulse EAS supports reliable operation in inductive load switching without external protection components.
Low RθJC3.3 °C/W junction-to-case thermal resistance allows >40 W power dissipation with moderate heatsinking on PCB.
Fast switchingtd(on) = 7.1 ns and tf = 29 ns reduce switching losses in PWM frequencies up to 500 kHz.
Lead-free & RoHS compliantPb-free plating and halogen-free molding compound meet IPC/JEDEC J-STD-020 reflow profile requirements.

Applications

DC-DC Buck ConverterAutomotive Door Lock Actuator

Use Scenario: High-efficiency 12 V input to 5 V/3.3 V step-down conversion in infotainment head units.

IC Role / Device Role: Synchronous high-side switch handling 10–15 A peak load current with <100 kHz PWM frequency.

Use Value: Low RDS(on) minimizes conduction loss; fast trr prevents cross-conduction with synchronous FET during dead-time.

Use Scenario: Bidirectional 12 V motor control for power window/lock modules in passenger vehicles.

IC Role / Device Role: Half-bridge low-side switch driving brushed DC motor with reverse polarity protection.

Use Value: Avalanche rating absorbs inductive kickback during abrupt current interruption; logic-level gate simplifies MCU GPIO interface.

Industrial PLC Output StageLED Constant-Current Driver

Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules.

IC Role / Device Role: Load switch controlling 24 V DC solenoids or indicator lamps with 2 A–10 A nominal current.

Use Value: 175°C max TJ and 110 °C/W RθJA enable operation in sealed enclosures without active cooling.

Use Scenario: Dimmable constant-current driver for high-brightness LED arrays in signage and lighting fixtures.

IC Role / Device Role: PWM-controlled current sink regulating LED string current up to 12 A.

Use Value: Low gate charge (15 nC) reduces driver IC power consumption; tight VGS(th) tolerance ensures consistent turn-on across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR2905PBFHigher V(BR)DSS (55 V same), lower RDS(on) (0.045 Ω), higher Qg (21 nC)Better conduction efficiency at >15 A but requires stronger gate driverPrefer when minimizing I²R loss dominates over switching loss and driver capability permits.
STP55NF06LSame V(BR)DSS (60 V), higher RDS(on) (0.022 Ω), lower ID (55 A), different TO-220 packageThrough-hole mounting only; higher current rating but larger footprint and worse thermal resistanceSelect only if through-hole assembly is mandatory and board space is unconstrained.

Compared with IRLR024NPBF, IRLR2905PBF delivers lower conduction loss at high current but increases gate drive demand, while STP55NF06L trades surface-mount convenience and thermal performance for higher current capacity in legacy through-hole layouts.

Availability

IRLR024NPBF is available at Aetrix Electronics and suitable for DC-DC converters, automotive actuator drivers, industrial PLC outputs, and LED current regulators requiring stable component supply across extended production lifecycles.

Supply support for IRLR024NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRLR series belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, medium-power switching applications where gate drive simplicity and ruggedness are critical.

FAQ

Is IRLR024NPBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–2.0 V and guaranteed turn-on at VGS = 4.0 V (RDS(on) ≤ 0.110 Ω), the IRLR024NPBF reliably switches full load current using standard 3.3 V GPIO outputs without external level shifters or gate drivers.

What is the maximum allowable PCB copper area for thermal performance?

For optimal thermal performance, the D-Pak drain tab should connect to ≥250 mm² of 2 oz copper on the top layer, thermally coupled via ≥4 thermal vias (0.3 mm diameter) to an internal ground plane. This configuration achieves RθJA ≈ 50 °C/W per datasheet test conditions.

Does IRLR024NPBF have integrated ESD protection?

No. The device lacks on-chip ESD protection diodes. External gate protection-such as a 10 kΩ series resistor and 12 V Zener clamp between gate and source-is recommended in systems exposed to handling or system-level ESD events per IEC 61000-4-2.

Can it replace IRLU024NPBF in a design?

Yes, with mechanical adaptation. Both share identical electrical specs and die, but IRLU024NPBF uses I-Pak (TO-251) through-hole packaging. Replace requires footprint redesign and requalification of thermal performance, as RθJA differs significantly between surface-mount (50 °C/W) and through-hole (62 °C/W) mounting.

IRLR024NPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
480 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRLR024NPBF FAQ

1.How can I place an order for IRLR024NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR024NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR024NPBF reliable?

The price and inventory of IRLR024NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024NPBF is usually 5 days.

3.What payment methods are accepted for IRLR024NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR024NPBF?

IRLR024NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR024NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR024NPBF?

For technical support, including IRLR024NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024NPBF requirements.

6.How does Aetrix verify that IRLR024NPBF is sourced from the original manufacturer or authorized distributors?

All IRLR024NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024NPBF meets industry standards.

7.What is the process for return or replacement of IRLR024NPBF?

All IRLR024NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR024NPBF part is unused and in its original packaging.

Return procedure for IRLR024NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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