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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR024NTRL

Name: IRLR024NTRL
Brand: Infineon Technologies
SKU: IRLR024NTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR024NTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR024NTRL.pdf

Description:: MOSFET N-CH 55V 17A DPAK

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Product details

Overview

IRLR024NTRL from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) package, designed for high-efficiency DC-DC conversion and motor control. It features 55 V V(BR)DSS, 0.065 Ω RDS(on) at VGS = 10 V, 17 A continuous drain current at TC = 25°C, and full avalanche rating for robust switching in automotive body electronics and industrial power supplies.

For engineers reviewing the IRLR024NTRL datasheet, IRLR024NTRL pinout, IRLR024NTRL application, or IRLR024NTRL equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 5 V gate bias (0.080 Ω), fast switching (tr = 74 ns, tf = 29 ns), and thermal resistance (RθJC = 3.3 °C/W) for surface-mount thermal management.

Technical Context

This HEXFET® fifth-generation device uses advanced planar processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its integrated body diode supports synchronous rectification with trr = 60–90 ns and Qrr = 130–200 nC under defined conditions (IF = 11 A, di/dt = 100 A/µs).

The MOSFET operates with gate threshold voltage of 1.0–2.0 V, enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting. Total gate charge is 15 nC (Qg), with Miller charge Qgd = 8.5 nC at VGS = 5.0 V and VDS = 44 V - critical for optimizing gate driver sizing in high-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	55 V - maximum blocking voltage before avalanche onset; defines safe operating range in 24 V and 48 V bus systems
RDS(on)	0.065 Ω @ VGS = 10 V - conduction loss of ≤11.1 W at 17 A ID, enabling compact thermal design
ID (TC = 25°C)	17 A - continuous current rating with PCB heatsinking; derates linearly at 0.3 W/°C above 25°C
EAS	68 mJ - single-pulse avalanche energy; supports reliable operation during inductive load turn-off transients
Qg / Qgd	15 nC / 8.5 nC - gate drive energy demand and Miller effect magnitude; determines required gate driver peak current
tr / tf	74 ns / 29 ns - rise/fall times at VDD = 28 V, ID = 11 A, RG = 12 Ω; enables >200 kHz switching in hard-switched topologies
RθJC	3.3 °C/W - junction-to-case thermal resistance; enables direct thermal coupling to heatsink or copper pour in D-Pak mounting

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with lead assignments verified per Infineon datasheet PD-91363E.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Logic-level compatible input requiring ≤2.0 V threshold; total gate charge 15 nC dictates driver strength requirements
2 (Drain)	High-side power terminal	Connected to exposed copper pad; carries full load current and provides primary thermal path to PCB
3 (Source)	Power return reference	Common node for gate drive return and current sensing; internal source inductance LS = 7.5 nH affects switching waveform fidelity

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at VGS = 4.0 V (RDS(on) = 0.110 Ω), enabling direct interface with 3.3 V/5 V MCUs and drivers
Fast switching performance	74 ns rise time and 29 ns fall time reduce switching losses in high-frequency converters (>200 kHz)
Full avalanche rating	68 mJ single-pulse EAS and 4.5 mJ repetitive EAR ensure reliability during inductive fault events without external snubbers
Low gate charge	15 nC total gate charge minimizes driver power consumption and simplifies gate driver IC selection

Applications

Automotive Body Control Module

Industrial DC Motor Driver

Use Scenario: Driving 12 V solenoids, relays, and LED arrays in vehicle door modules and lighting controllers.

IC Role / Device Role / Timing Role: High-side load switch with logic-level gate control and integrated body diode for inductive kickback clamping.

Use Value: Eliminates need for external flyback diode and level shifter; 0.065 Ω RDS(on) limits power dissipation to <2.3 W at 7 A load current.

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor drives for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (tf = 29 ns) to minimize shoot-through risk in complementary PWM control.

Use Value: Avalanche rating withstands motor back-EMF transients up to 68 mJ; RθJC = 3.3 °C/W enables stable operation at 12 A continuous with minimal heatsinking.

Server PSU ORing FET

Smart Power Outlet Switch

Use Scenario: Hot-swap ORing function in redundant 12 V intermediate bus architectures.

IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET used as ideal diode with reverse recovery optimized by low Qrr (130–200 nC).

Use Value: Body diode forward voltage VSD = 1.3 V at 11 A enables low-loss forward conduction; fast trr (60–90 ns) reduces reverse recovery loss during current reversal.

Use Scenario: Solid-state replacement for mechanical relays in smart home power outlets with zero-crossing detection.

IC Role / Device Role / Timing Role: Main power switching element controlled via isolated gate driver with 5 V logic interface.

Use Value: 17 A continuous rating supports 15 A AC loads (derated); logic-level gate allows direct optocoupler output drive without buffer transistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR2905TRLPBF	Higher V(BR)DSS (55 V same), lower RDS(on) (0.045 Ω @ 10 V), higher Qg (22 nC)	Better conduction efficiency but slower switching; requires stronger gate driver	Select when conduction loss dominates over switching loss (e.g., <100 kHz, high-duty-cycle loads)
STP55NF06L	Same V(BR)DSS (60 V), higher RDS(on) (0.065 Ω @ 10 V), higher ID (55 A), TO-220 package	Through-hole mounting only; higher thermal mass but no exposed drain pad	Select when through-hole assembly, higher surge current margin, or legacy footprint compatibility is required

Compared with IRLR024NTRL, IRLR2905TRLPBF offers lower conduction loss at cost of increased gate drive demand, while STP55NF06L trades surface-mount flexibility for higher current headroom and through-hole reliability - both require layout and thermal redesign.

Availability

IRLR024NTRL is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, server power ORing, and smart power outlet designs requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for IRLR024NTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor solutions, and automotive electronics, with core expertise in silicon-based power devices and system-level integration.

The HEXFET® power MOSFET product line was developed for high-efficiency, high-reliability switching in automotive, industrial, and computing power systems - emphasizing low RDS(on), fast switching, and rugged transient handling.

FAQ

What is the maximum junction temperature for continuous operation?

The IRLR024NTRL has a specified TJ operating range of –55°C to +175°C. For continuous operation, junction temperature must remain ≤175°C under worst-case thermal conditions - achievable with proper PCB copper area (1"² FR-4), ambient ≤85°C, and case temperature monitoring per Fig. 9 in the datasheet.

Can this MOSFET be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (VGS(th)) is 1.0–2.0 V, and it achieves RDS(on) = 0.110 Ω at VGS = 4.0 V and ID = 9.0 A. At 3.3 V, it remains partially enhanced; for full enhancement and minimal conduction loss, a dedicated 5 V gate driver or level shifter is recommended.

Is the body diode suitable for synchronous rectification?

Yes - the intrinsic body diode has VSD = 1.3 V at IS = 11 A and TJ = 25°C, with trr = 60–90 ns and Qrr = 130–200 nC. These parameters support synchronous rectification in buck converters up to ~500 kHz, though discrete Schottky diodes may offer lower forward drop in ultra-low-voltage applications.

What is the recommended PCB footprint and soldering method?

The D-Pak (TO-252AA) package requires a thermally enhanced footprint per Application Note AN-994: large copper pour connected to the drain pad, minimum 1"² FR-4 board area, and vapor-phase or infrared reflow. Wave soldering is not recommended due to thermal stress on the plastic body and internal wire bonds.

IRLR024NTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR024NTRL FAQ

1.How can I place an order for IRLR024NTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR024NTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR024NTRL reliable?

The price and inventory of IRLR024NTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024NTRL is usually 5 days.

3.What payment methods are accepted for IRLR024NTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024NTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR024NTRL?

IRLR024NTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR024NTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR024NTRL?

For technical support, including IRLR024NTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024NTRL requirements.

6.How does Aetrix verify that IRLR024NTRL is sourced from the original manufacturer or authorized distributors?

All IRLR024NTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024NTRL meets industry standards.

7.What is the process for return or replacement of IRLR024NTRL?

All IRLR024NTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024NTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR024NTRL part is unused and in its original packaging.

Return procedure for IRLR024NTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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