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Infineon Technologies IRLR024NTRLPBF
- Part No.:
- IRLR024NTRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR024NTRLPBF.pdf
- Description:
- MOSFET N-CH 55V 17A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,003
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Product details
Overview
IRLR024NTRLPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in D-Pak surface-mount package, rated for 55 V V(BR)DSS, 17 A continuous drain current at 25°C, and 0.065 Ω RDS(on) at VGS = 10 V. It features fully avalanche-rated ruggedness, fast switching (td(on) = 7.1 ns, tf = 29 ns), and lead-free construction-designed for DC-DC converters, motor control stages, and high-efficiency load switches.
For engineers reviewing the IRLR024NTRLPBF datasheet, IRLR024NTRLPBF pinout, IRLR024NTRLPBF application, or IRLR024NTRLPBF equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), thermal resistance (RθJC = 3.3 °C/W), body diode recovery performance (trr = 60–90 ns), and avalanche energy rating (EAS = 68 mJ).
Technical Context
This HEXFET® device uses fifth-generation silicon processing to minimize RDS(on) per die area while maintaining robust unclamped inductive switching capability. Its low gate charge (Qg = 15 nC, Qgd = 8.5 nC) enables efficient operation with standard gate drivers at frequencies up to several hundred kHz.
The integrated body diode exhibits controlled reverse recovery (Qrr = 130–200 nC, dv/dt = 5.0 V/ns), supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external snubbing in moderate-power designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 55 V - Maximum blocking voltage before avalanche onset; defines upper limit for input rail in step-down converters. |
| RDS(on) | 0.065 Ω @ VGS = 10 V - Conduction loss of ~110 mW at 11 A ID; enables <1 W dissipation in compact SMT layouts. |
| ID (TC = 25°C) | 17 A - Continuous current capability with adequate PCB copper area and heatsinking. |
| EAS | 68 mJ - Single-pulse avalanche energy tolerance; supports reliable operation during inductive turn-off transients. |
| Qg / Qgd | 15 nC / 8.5 nC - Gate drive power demand and Miller-effect sensitivity; determines minimum gate driver current and layout immunity. |
| trr / Qrr | 60–90 ns / 130–200 nC - Body diode recovery speed and stored charge; impacts efficiency and EMI in hard-switched freewheel paths. |
| RθJC | 3.3 °C/W - Junction-to-case thermal resistance; enables direct thermal pad attachment to heatsink or copper pour for >30 W power handling. |
Pinout & Package
The IRLR024NTRLPBF is housed in a D-Pak (TO-252AA) surface-mount package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain tab provides low-inductance, high-current path and primary thermal conduction path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current sink and thermal interface | Electrically and thermally connected to PCB copper pour; must be isolated from other nets unless referenced to system ground. |
| Source (Pin 1) | Reference node for gate drive and current sensing | Low-impedance return path; critical for stable gate control and accurate current monitoring in high-side configurations. |
| Gate (Pin 2) | Control electrode for channel formation | High-impedance input requiring <100 nA leakage; sensitive to ESD and layout-induced ringing due to Qgd dominance. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.0 V (RDS(on) = 0.110 Ω), enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting. |
| Fully avalanche rated | Guaranteed single-pulse avalanche survival up to 68 mJ, eliminating need for external clamping in inductive load switching. |
| Low RDS(on) × Qg figure of merit | ~0.98 Ω·nC - Balances conduction and switching losses for optimal efficiency in 100–500 kHz SMPS designs. |
| Lead-free and RoHS compliant | Meets JEDEC J-STD-020 reflow profile; compatible with vapor phase and IR reflow processes without solder joint reliability degradation. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: 12 V input to 5 V/3 A output in industrial PLC I/O module. IC Role / Device Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: Achieves >92% peak efficiency and eliminates diode forward drop heating, enabling smaller heatsink and higher power density. | Use Scenario: H-bridge driver for 24 V, 8 A brushed motor in automated gate actuator. IC Role / Device Role: Low-side switching element with integrated body diode providing freewheeling path during PWM off-time. Use Value: Enables 100% duty-cycle operation without external flyback diodes; trr < 90 ns prevents shoot-through risk during direction reversal. |
| Hot-Swap Controller | LED Constant-Current Driver |
Use Scenario: Inrush current limiting for 48 V backplane card insertion. IC Role / Device Role: Linear-mode pass element controlled via gate voltage ramp to limit dI/dt during hot-plug event. Use Value: RDS(on) temperature coefficient (0.061 V/°C) ensures inherent current limiting as junction heats, improving fault tolerance. | Use Scenario: Dimmable 36 V, 1.2 A LED string driver in architectural lighting fixture. IC Role / Device Role: High-side constant-current switch modulated by PWM signal from MCU. Use Value: Logic-level threshold allows direct 3.3 V GPIO control; low Qg minimizes gate drive power in 1–10 kHz dimming range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR2905PBF | Higher V(BR)DSS (55 V same), lower RDS(on) (0.045 Ω), higher Qg (24 nC) | Better conduction loss at high current; slower switching due to larger gate charge | Prefer when thermal budget is tight but switching frequency ≤ 200 kHz |
| STP55NF06L | Same V(BR)DSS (55 V), higher RDS(on) (0.070 Ω), lower Qg (12 nC), different D²PAK package | Lower gate drive power; requires larger footprint and different thermal pad layout | Prefer when board space allows D²PAK and gate driver output current is limited |
Compared with IRLR2905PBF and STP55NF06L, the IRLR024NTRLPBF offers the best balance of low gate charge, proven D-Pak thermal performance, and mature qualification history-making it ideal for cost-sensitive, medium-frequency, surface-mount power stages where layout simplicity and supply chain stability are prioritized.
Availability
IRLR024NTRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and LED drivers requiring stable component supply across industrial, automotive, and embedded OEM programs.
Supply support for IRLR024NTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.
The HEXFET® Power MOSFET product line was developed to deliver high-current, low-RDS(on), and rugged switching performance in standardized surface-mount packages-targeting high-efficiency power conversion and motor control applications.
FAQ
What is the maximum safe operating temperature for IRLR024NTRLPBF?
The IRLR024NTRLPBF has a maximum operating junction temperature of +175°C and storage temperature range of –55°C to +175°C. Derating begins at TC = 25°C with a linear factor of 0.3 W/°C; sustained operation above 150°C requires careful thermal design using the RθJC = 3.3 °C/W path to an external heatsink or thick copper plane.
Can IRLR024NTRLPBF be used in linear (analog) mode for hot-swap or current-limiting applications?
Yes-the device is fully specified for linear-mode operation, including Safe Operating Area (SOA) curves up to 10 ms pulses and thermal impedance data. Its positive RDS(on) temperature coefficient provides inherent current limiting, and its 68 mJ avalanche rating adds fault margin during transient overloads in controlled-ramp applications.
Does IRLR024NTRLPBF require a gate resistor for stability?
A gate resistor (typically 10–47 Ω) is recommended to dampen parasitic oscillation caused by Qgd feedback and PCB trace inductance. Without it, ringing on the gate waveform can cause false turn-on or increased switching losses-especially when driven by high-speed logic or low-impedance drivers with fast edge rates.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VF ≈ 1.3 V at 11 A and trr = 60–90 ns-higher forward drop and slower recovery than most Schottky diodes. However, its co-packaged integration eliminates layout parasitics and enables precise timing control in synchronous rectification, making it preferable where layout simplicity and predictability outweigh absolute diode efficiency.
IRLR024NTRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 480 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR024NTRLPBF FAQ
1.How can I place an order for IRLR024NTRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR024NTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR024NTRLPBF reliable?
The price and inventory of IRLR024NTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024NTRLPBF is usually 5 days.
3.What payment methods are accepted for IRLR024NTRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024NTRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR024NTRLPBF?
IRLR024NTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR024NTRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR024NTRLPBF?
For technical support, including IRLR024NTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024NTRLPBF requirements.
6.How does Aetrix verify that IRLR024NTRLPBF is sourced from the original manufacturer or authorized distributors?
All IRLR024NTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024NTRLPBF meets industry standards.
7.What is the process for return or replacement of IRLR024NTRLPBF?
All IRLR024NTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024NTRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR024NTRLPBF part is unused and in its original packaging.
Return procedure for IRLR024NTRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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