Infineon Technologies IRLR024NTRR
- Part No.:
- IRLR024NTRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR024NTRR.pdf
- Description:
- MOSFET N-CH 55V 17A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:9,947
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Product details
Overview
IRLR024NTRR from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) package, rated for 55 V VDS, 17 A continuous drain current at TC = 25°C, and 0.065 Ω RDS(on) at VGS = 10 V. It features fast switching, full avalanche rating, and surface-mount compatibility for DC-DC converters and motor control stages.
For engineers reviewing the IRLR024NTRR datasheet, IRLR024NTRR pinout, IRLR024NTRR application, or IRLR024NTRR equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), thermal resistance (RθJC = 3.3 °C/W), avalanche energy (EAS = 68 mJ), and D-Pak footprint suitability for high-current PCB layouts.
Technical Context
This fifth-generation HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its low gate charge (Qg = 15 nC) and fast turn-on/turn-off times (td(on) = 7.1 ns, tf = 29 ns) support high-frequency PWM operation up to several hundred kHz.
The integrated body diode exhibits trr = 60–90 ns and Qrr = 130–200 nC under specified conditions, enabling efficient synchronous rectification and flyback recovery. Thermal design is supported by validated junction-to-case (3.3 °C/W) and junction-to-ambient (50 °C/W on 1"² FR-4) metrics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; defines use in ≤48 V bus systems |
| RDS(on) @ VGS = 10 V | 0.065 Ω - Conduction loss of 18.6 W at 17 A; enables high-efficiency low-voltage switching |
| ID @ TC = 25°C | 17 A - Continuous current rating with heatsink; supports >200 W load switching in compact layouts |
| EAS | 68 mJ - Single-pulse avalanche energy; allows safe operation during inductive load transients |
| Qg | 15 nC - Total gate charge; determines driver strength requirement for <100 ns switching transitions |
| tr/tf | 74 ns / 29 ns - Rise/fall times at VDD = 28 V, ID = 11 A; enables ≥500 kHz hard-switching |
| RθJC | 3.3 °C/W - Junction-to-case thermal resistance; permits direct heatsink mounting without thermal interface layer |
Pinout & Package
D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with lead assignments verified per JEDEC outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Logic-level compatible; threshold 1.0–2.0 V enables direct microcontroller drive without level-shifting |
| 2 & 4 (Drain) | High-side switch output | Internally connected pins; large copper area provides low-inductance, high-current path to PCB ground plane |
| 3 (Source) | Power return reference | Common source node for gate drive loop; critical for minimizing switching noise in high-dI/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.0–2.0 V ensures reliable turn-on with 3.3 V or 5 V MCU GPIOs |
| Fully avalanche-rated | 68 mJ single-pulse EAS eliminates need for external snubbers in inductive load switching |
| Low RDS(on) × Qg figure-of-merit | 0.065 Ω × 15 nC = 0.975 Ω·nC - balances conduction and switching losses in high-frequency SMPS |
| Fast body diode recovery | trr = 60–90 ns and Qrr = 130–200 nC reduce reverse recovery losses in synchronous buck topologies |
Applications
| Brushless DC Motor Driver | Automotive LED Headlamp Control |
|---|---|
Use Scenario: Half-bridge high-side switch in 12 V automotive BLDC fan controller. IC Role / Device Role / Timing Role: N-channel high-side power switch with bootstrap gate drive; operates at 20–50 kHz PWM frequency. Use Value: 0.065 Ω RDS(on) limits conduction loss to <2.2 W at 17 A, reducing heatsink size and system cost. | Use Scenario: Constant-current dimming switch for adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Low-side current sink controlling 3–5 A LED strings with 100–500 Hz PWM dimming. Use Value: Logic-level gate enables direct drive from automotive microcontroller; 175°C max TJ supports under-hood placement. |
| Industrial DC-DC Converter | USB-C Power Delivery Switch |
Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V buck converter for PLC I/O modules. IC Role / Device Role / Timing Role: Secondary-side N-MOSFET replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: 68 mJ EAS withstands transient overloads during short-circuit events without failure. | Use Scenario: Load switch enabling/disabling 20 V/5 A USB-C PD power path in portable docking stations. IC Role / Device Role / Timing Role: Inrush-limited power switch with controlled turn-on via RC gate network. Use Value: 0.080 Ω RDS(on) at VGS = 4.0 V ensures <3.2 W loss at 5 A, meeting thermal limits in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR2905TRPBF | VDS = 55 V, RDS(on) = 0.045 Ω @ 10 V, ID = 23 A - lower on-resistance but higher Qg (24 nC) | Better conduction efficiency at high current; less suitable for very high-frequency (>1 MHz) switching due to gate drive demand | Select when thermal margin is constrained and gate drive capability supports 24 nC charge |
| STP55NF06L | VDS = 60 V, RDS(on) = 0.022 Ω @ 10 V, ID = 50 A - higher current rating and lower RDS(on), but TO-220 package | Requires through-hole mounting and larger PCB area; not drop-in compatible with D-Pak footprint | Choose only if board redesign accommodates TO-220 and higher current handling is mandatory |
Compared with IRLR2905TRPBF and STP55NF06L, the IRLR024NTRR offers optimal balance of D-Pak surface-mount compatibility, logic-level drive, and proven avalanche robustness for space-constrained 12–48 V industrial and automotive switching nodes.
Availability
IRLR024NTRR is available at Aetrix Electronics and suitable for brushless DC motor drivers, automotive LED headlamp control, industrial DC-DC converters, and USB-C power delivery switches requiring stable component supply and long-term production continuity.
Supply support for IRLR024NTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.
The HEXFET® power MOSFET product line was engineered for high-efficiency, high-reliability switching in automotive, industrial, and consumer power conversion systems-emphasizing ruggedness, fast dynamics, and thermal performance.
FAQ
What is the maximum operating junction temperature for IRLR024NTRR?
The absolute maximum operating junction temperature is +175°C, as specified in the Absolute Maximum Ratings table. This rating enables deployment in under-hood automotive environments and enclosed industrial enclosures where ambient temperatures exceed 100°C, provided thermal design maintains TJ ≤ 175°C using the published RθJC = 3.3 °C/W metric.
Can IRLR024NTRR be driven directly from a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage range (1.0–2.0 V) and guaranteed RDS(on) of 0.080 Ω at VGS = 4.0 V confirm reliable enhancement-mode turn-on with 3.3 V logic. However, full 17 A current capability requires VGS ≥ 5 V; for marginal loads (<5 A), 3.3 V drive is sufficient with acceptable RDS(on) increase.
Is the IRLR024NTRR RoHS-compliant and halogen-free?
Yes - Infineon certifies IRLR024NTRR as RoHS-compliant (2011/65/EU) and halogen-free per IEC 61249-2-21. The D-Pak package uses matte tin-plated leads and green molding compound, with full material declarations available in Infineon's official compliance documentation (Doc ID: IRPLA-001).
What is the recommended PCB footprint and soldering profile for IRLR024NTRR?
The manufacturer specifies a 1"² FR-4 copper pad for thermal performance, with vapor-phase or infrared reflow per IPC-J-STD-020. Application Note AN-994 details land pattern dimensions, solder mask clearance, and thermal via placement (≥6 vias Ø0.3 mm) beneath the drain pad to achieve RθJA ≈ 50 °C/W.
IRLR024NTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 480 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR024NTRR FAQ
1.How can I place an order for IRLR024NTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR024NTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR024NTRR reliable?
The price and inventory of IRLR024NTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024NTRR is usually 5 days.
3.What payment methods are accepted for IRLR024NTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024NTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR024NTRR?
IRLR024NTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR024NTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR024NTRR?
For technical support, including IRLR024NTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024NTRR requirements.
6.How does Aetrix verify that IRLR024NTRR is sourced from the original manufacturer or authorized distributors?
All IRLR024NTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024NTRR meets industry standards.
7.What is the process for return or replacement of IRLR024NTRR?
All IRLR024NTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024NTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR024NTRR part is unused and in its original packaging.
Return procedure for IRLR024NTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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