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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR024NTRRPBF

Name: IRLR024NTRRPBF
Brand: Infineon Technologies
SKU: IRLR024NTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR024NTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR024NTRRPBF.pdf

Description:: MOSFET N-CH 55V 17A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR024NTRRPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in D-Pak surface-mount package, rated for 55 V V(BR)DSS, 0.065 Ω RDS(on) at VGS = 10 V and ID = 10 A, with 17 A continuous drain current at TC = 25°C. It features fast switching (tr = 74 ns, tf = 29 ns), full avalanche rating (EAS = 68 mJ), and lead-free construction-used in DC-DC converters, motor drivers, and load-switching circuits.

For engineers reviewing the IRLR024NTRRPBF datasheet, IRLR024NTRRPBF pinout, IRLR024NTRRPBF application, or IRLR024NTRRPBF equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), thermal resistance (RθJC = 3.3 °C/W), body diode recovery performance (trr = 60–90 ns), and SOA-limited pulse handling up to 72 A IDM.

Technical Context

This HEXFET® device uses fifth-generation silicon process to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Qg = 15 nC, Qgd = 8.5 nC) supports efficient high-frequency operation in synchronous buck stages and half-bridge topologies.

The integrated body diode exhibits low forward voltage (VSD = 1.3 V at IS = 11 A, TJ = 25°C) and controlled reverse recovery (Qrr = 130–200 nC), enabling reliable operation in freewheeling and regenerative braking paths without external Schottky supplementation in moderate-speed applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	55 V - Maximum blocking voltage before avalanche onset; defines upper rail limit in 48 V systems.
RDS(on)	0.065 Ω @ VGS = 10 V, ID = 10 A - Conduction loss of 6.5 W at 10 A; enables <1% efficiency drop in 12 V/10 A loads.
ID (TC = 25°C)	17 A - Continuous current capability with heatsink; supports 200 W load switching at 12 V with forced-air cooling.
Qg / Qgd	15 nC / 8.5 nC - Gate drive energy demand dictates minimum gate driver peak current (≥2 A for 100 ns rise time).
trr / Qrr	60–90 ns / 130–200 nC - Body diode recovery behavior constrains maximum switching frequency to ≤250 kHz in hard-commutated topologies.
RθJC	3.3 °C/W - Junction-to-case thermal resistance enables direct PCB copper pour heatsinking; 10 W dissipation raises junction only 33°C above case.
EAS	68 mJ - Single-pulse avalanche energy rating allows safe operation under inductive turn-off transients up to L·I²/2 = 68 mJ.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Standard three-terminal configuration: Drain (tab and Pin 2), Source (Pin 1), Gate (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to low-side return path; carries full load current in low-side switch configuration.
Pin 2 (Drain)	Drain terminal (D)	High-side connection point; electrically and thermally tied to exposed metal tab; requires solder mask clearance and thermal via array.
Pin 3 (Gate)	Gate terminal (G)	Control input with ±16 V absolute max rating; sensitive to ESD; requires series resistor (≥10 Ω) to damp ringing during fast switching.

Key Features

Feature	Design Value
Logic-level gate drive	VGS(th) = 1.0–2.0 V enables direct interface with 3.3 V and 5 V microcontrollers without level-shifting.
Fully avalanche-rated	Rated for repetitive unclamped inductive switching (IAS = 11 A, EAS = 68 mJ); eliminates need for external snubbers in relay/motor drive.
Low RDS(on) × Qg figure-of-merit	0.065 Ω × 15 nC = 0.975 Ω·nC - balances conduction and switching losses for 100–500 kHz SMPS designs.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; compatible with Pb-free assembly processes up to 260°C peak.
Enhanced body diode performance	trr = 60–90 ns and Qrr = 130–200 nC support efficient freewheeling in synchronous rectification and H-bridge motor control.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: 12 V input to 5 V/10 A output in industrial PLC power supply.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in fixed-frequency 300 kHz buck regulator.

Use Value: 0.065 Ω RDS(on) reduces conduction loss to 6.5 W at full load, improving efficiency by 2.1% vs. legacy 0.12 Ω MOSFETs.

Use Scenario: Bidirectional 24 V/8 A brushed motor control in automated gate actuator.

IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge with PWM at 20 kHz.

Use Value: Logic-level gate threshold ensures full enhancement at 5 V gate drive; avalanche rating withstands back-EMF spikes during abrupt stop.

Hot-Swap Controller

LED Constant-Current Driver

Use Scenario: Inrush-limited 48 V board-level power insertion in telecom shelf.

IC Role / Device Role / Timing Role: Main pass element in linear hot-swap circuit with current-limit feedback.

Use Value: 17 A continuous rating and 3.3 °C/W RθJC allow 8 A sustained current with <40°C junction rise on 2 oz copper.

Use Scenario: Dimmable 36 V/1.5 A LED string driver in architectural lighting fixture.

IC Role / Device Role / Timing Role: PWM-controlled current sink in constant-current buck topology.

Use Value: Fast turn-off (tf = 29 ns) minimizes duty-cycle error at 1–10 kHz dimming frequencies; low Qgd suppresses shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR2905PBF	Higher V(BR)DSS (55 V same), lower RDS(on) (0.045 Ω), higher Qg (24 nC)	Better conduction loss at high current; slower switching due to 60% higher gate charge	Prefer for <100 kHz, high-efficiency DC-DC where thermal margin is constrained
STP55NF06L	Same V(BR)DSS (60 V), higher RDS(on) (0.014 Ω), lower Qg (12 nC), TO-220 package	Lower switching loss but through-hole mounting; no exposed drain pad for PCB thermal relief	Prefer for prototyping or low-volume assemblies where manual soldering is used

Compared with IRLR024NTRRPBF, IRLR2905PBF trades higher gate drive demand for reduced conduction loss, while STP55NF06L offers faster switching in a non-surface-mount form factor-neither is pin-compatible, requiring layout revision for substitution.

Availability

IRLR024NTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and hot-swap controllers requiring stable component supply across industrial, automotive, and infrastructure programs.

Supply support for IRLR024NTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET® MOSFET innovation.

This part belongs to the legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power switching in industrial and consumer power conversion systems.

FAQ

What is the maximum gate-source voltage rating for IRLR024NTRRPBF?

The absolute maximum gate-to-source voltage is ±16 V. Exceeding this rating risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) or limiting resistors to prevent overshoot during fast switching or ESD events, especially when driving from microcontrollers with 5 V outputs.

Does IRLR024NTRRPBF require a gate resistor, and what value is recommended?

A series gate resistor (typically 10–22 Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance and PCB trace inductance. Values below 5 Ω increase risk of ringing and shoot-through in bridge configurations; values above 47 Ω excessively slow switching, raising dynamic losses. Layout-dependent optimization is advised using gate waveform measurement.

Can IRLR024NTRRPBF be used in parallel for higher current handling?

Yes, but only with careful attention to gate drive matching, source inductance balancing, and thermal coupling. The positive temperature coefficient of RDS(on) provides inherent current sharing, yet mismatched trace lengths or asymmetric heatsinking can cause >20% current imbalance. Use Kelvin-source connections and individual gate resistors for robust paralleling.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad (Pin 2) is internally connected to the MOSFET's drain terminal and must be soldered directly to a large copper pour designated as the high-side power net. It is not isolated; connecting it to ground creates a short circuit. Thermal vias beneath the pad must route to internal power planes-not signal or ground layers-unless the drain net coincides with system ground.

IRLR024NTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR024NTRRPBF FAQ

1.How can I place an order for IRLR024NTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR024NTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR024NTRRPBF reliable?

The price and inventory of IRLR024NTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024NTRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR024NTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024NTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR024NTRRPBF?

IRLR024NTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR024NTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR024NTRRPBF?

For technical support, including IRLR024NTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024NTRRPBF requirements.

6.How does Aetrix verify that IRLR024NTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR024NTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024NTRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR024NTRRPBF?

All IRLR024NTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024NTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR024NTRRPBF part is unused and in its original packaging.

Return procedure for IRLR024NTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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