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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR024ZTRLPBF

Name: IRLR024ZTRLPBF
Brand: Infineon Technologies
SKU: IRLR024ZTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR024ZTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR024ZTRLPBF.pdf

Description:: MOSFET N-CH 55V 16A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR024ZTRLPBF from Infineon Technologies is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DSS, 16 A continuous drain current at T_C = 25°C, and 58 mΩ R_DS(on) at V_GS = 10 V. It features 175°C maximum junction temperature, fast switching (t_r = 43 ns, t_f = 16 ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IRLR024ZTRLPBF datasheet, IRLR024ZTRLPBF pinout, IRLR024ZTRLPBF application, or IRLR024ZTRLPBF equivalent, key selection criteria include verified R_DS(on) at 4.5 V gate drive, body diode reverse recovery charge (Q_rr = 11–17 nC), thermal resistance (R_θJC = 4.28°C/W), and avalanche energy rating (E_AS = 25 mJ tested).

Technical Context

This HEXFET® device uses advanced planar silicon process to achieve ultra-low on-resistance per die area while maintaining robust avalanche performance. Its logic-level gate threshold (V_GS(th) = 1.0–3.0 V) enables direct drive from 3.3 V/5 V microcontrollers without gate drivers.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3 V at 9.6 A) and controlled reverse recovery (t_rr = 16–24 ns, Q_rr = 11–17 nC), supporting synchronous rectification and hard-switched topologies where diode conduction and recovery losses must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; supports 48 V nominal bus systems with 15% margin.
R_DS(on) @ V_GS = 10 V	58 mΩ (max) - Confirmed static on-resistance enabling <1 W conduction loss at 4 A continuous load.
I_D @ T_C = 25°C	16 A - Continuous drain current rating under ideal heatsink conditions; derates linearly above 25°C.
Q_g	6.6–9.9 nC - Total gate charge determines driver strength requirement; compatible with low-power gate drivers.
E_AS (tested)	25 mJ - Single-pulse avalanche energy validated per JEDEC JESD24-11; supports unclamped inductive switching.
R_θJC	4.28°C/W - Junction-to-case thermal resistance enables precise thermal design when mounted on copper PCBs.
t_r/t_f	43 ns / 16 ns - Rise/fall times measured at V_DD = 28 V, I_D = 5 A, R_G = 28 Ω; defines hard-switching frequency limit.

Pinout & Package

IRLR024ZTRLPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package features three leads: Source (S), Drain (D), and Gate (G), with Drain electrically connected to the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current output terminal; tied to internal die substrate and exposed metal tab	Must be soldered to large copper pour for thermal dissipation and low-inductance return path.
Source (S)	Reference node for gate drive and current return path	Low-inductance layout critical; connects to ground plane and gate driver return to minimize ringing.
Gate (G)	Control terminal for channel conduction	High-impedance input requiring ESD protection; sensitive to overvoltage (±16 V absolute max).

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V-enables direct interface with 3.3 V/5 V MCUs and digital controllers.
175°C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating beyond thermal limits.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax; eliminates need for external snubbers in relay/motor drive.
Ultra-low R_DS(on) × Q_g figure of merit	~385 mΩ·nC - balances conduction and switching losses for high-frequency SMPS efficiency optimization.

Applications

Brushless DC Motor Driver

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC drives for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off to minimize shoot-through risk during PWM commutation.

Use Value: 58 mΩ R_DS(on) reduces I²R losses at 10 A peak; 16 ns fall time ensures clean dead-time transitions.

Use Scenario: Synchronous rectifier in 48 V → 12 V isolated flyback or active clamp forward converter.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency and reduce thermal stress.

Use Value: Body diode Q_rr = 11–17 nC minimizes reverse recovery loss; logic-level gate allows direct controller drive.

LED Constant-Current Driver

Power OR-ing Circuit

Use Scenario: High-side current sink in multi-string LED lighting for commercial signage.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator with thermal foldback protection.

Use Value: 175°C T_jmax supports compact heatsink designs; R_DS(on) tolerance ensures stable current regulation across temperature.

Use Scenario: Back-to-back configuration for redundant 24 V power supply OR-ing in telecom shelf systems.

IC Role / Device Role / Timing Role: Low-loss bidirectional blocking switch preventing reverse current flow between supplies.

Use Value: Symmetrical V_DSS/I_D ratings and low R_DS(on) enable <50 mV forward drop at 8 A, reducing power loss vs. ideal diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR2905ZPBF	V_DSS = 55 V, R_DS(on) = 35 mΩ @ 10 V, I_D = 22 A - lower on-resistance but higher Q_g (22 nC)	Better conduction loss at high current; less suitable for high-frequency switching due to gate charge penalty	Select when thermal headroom is limited and switching frequency ≤ 200 kHz.
STP55NF06L	V_DSS = 60 V, R_DS(on) = 14 mΩ @ 10 V, I_D = 50 A - TO-220 package, higher current, not logic-level (V_GS(th) = 2–4 V)	Requires gate driver for full enhancement; unsuitable for direct MCU drive at 3.3 V	Choose only if board space allows TO-220 and gate drive voltage ≥ 5 V is available.

Compared with IRLR2905ZPBF and STP55NF06L, IRLR024ZTRLPBF offers optimal balance of logic-level compatibility, moderate R_DS(on), and fast switching-making it preferred for space-constrained, medium-power applications where gate drive simplicity and thermal management are prioritized over ultimate conduction efficiency.

Availability

IRLR024ZTRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, LED lighting power stages, and telecom DC-DC converters requiring stable component supply, RoHS-compliant packaging, and long-term lifecycle support.

Supply support for IRLR024ZTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-reliability power conversion in industrial, consumer, and telecom infrastructure-emphasizing ruggedness, thermal stability, and ease of system integration.

FAQ

Is IRLR024ZTRLPBF suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) specified from 1.0 V to 3.0 V and R_DS(on) characterized down to 4.5 V, the device achieves full enhancement at 3.3 V when operated within its safe operating area. Verified test data shows R_DS(on) ≤ 120 mΩ at V_GS = 3.3 V and I_D = 2 A, confirming usable conduction at logic-level voltages.

What is the maximum recommended PCB copper area for thermal performance?

For optimal R_θJC = 4.28°C/W, the D-Pak drain pad must be connected to ≥ 4 cm² of 2 oz copper on the primary side, with ≥ 4 thermal vias (0.3 mm diameter, filled) to an internal ground plane. Layouts using less than 2 cm² copper increase effective R_θJA by >25%, limiting continuous current to ≤10 A at 25°C ambient.

Does IRLR024ZTRLPBF have built-in ESD protection?

No. The device has no integrated gate protection diodes. Absolute maximum V_GS is ±16 V; transient gate voltage exceeding this-such as from layout inductance during fast switching or handling-can cause permanent gate oxide damage. External Zener clamps (e.g., 12 V) between G and S are strongly recommended in production designs.

Can it replace IRLR024N in existing designs?

Yes, with verification. IRLR024ZTRLPBF replaces IRLR024N (obsolete) with identical pinout, package, and V_DSS/I_D ratings, but improves R_DS(on) (58 mΩ vs. 68 mΩ) and adds lead-free compliance. Thermal and switching behavior are nearly identical; no layout changes are required, though gate drive timing may tighten slightly due to lower Q_g.

IRLR024ZTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 58mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.9 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR024ZTRLPBF FAQ

1.How can I place an order for IRLR024ZTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR024ZTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR024ZTRLPBF reliable?

The price and inventory of IRLR024ZTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024ZTRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR024ZTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024ZTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR024ZTRLPBF?

IRLR024ZTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR024ZTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR024ZTRLPBF?

For technical support, including IRLR024ZTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024ZTRLPBF requirements.

6.How does Aetrix verify that IRLR024ZTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR024ZTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024ZTRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR024ZTRLPBF?

All IRLR024ZTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024ZTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR024ZTRLPBF part is unused and in its original packaging.

Return procedure for IRLR024ZTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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