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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR024ZTRPBF

Name: IRLR024ZTRPBF
Brand: Infineon Technologies
SKU: IRLR024ZTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR024ZTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR024ZTRPBF.pdf

Description:: MOSFET N-CH 55V 16A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR024ZTRPBF from Infineon Technologies is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DSS, 16 A continuous drain current at T_C = 25°C, and 58 mΩ R_DS(on) at V_GS = 10 V. It features 175°C junction temperature rating, fast switching (t_r = 43 ns, t_f = 16 ns), and specified repetitive avalanche capability up to T_jmax. It is used in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRLR024ZTRPBF datasheet, IRLR024ZTRPBF pinout, IRLR024ZTRPBF application, or IRLR024ZTRPBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–3.0 V), low R_DS(on) at 4.5 V, body diode recovery performance (t_rr = 16–24 ns), and thermal resistance (R_θJC = 4.28°C/W).

Technical Context

This MOSFET employs Infineon's HEXFET® advanced process technology optimized for low on-resistance per die area and robust unclamped inductive switching. Its gate charge profile (Q_g = 6.6–9.9 nC, Q_gd = 3.9 nC) supports high-frequency PWM operation with minimal Miller-induced shoot-through risk.

The integrated body diode exhibits V_SD = 1.3 V max at I_S = 9.6 A and controlled reverse recovery (Q_rr = 11–17 nC), enabling reliable freewheeling in synchronous buck and half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; defines upper limit for input rail in 48 V systems.
R_DS(on) @ V_GS = 10 V	58 mΩ max - Conduction loss of ≤52 mW at 12 A, enabling >95% efficiency in 12–24 V load switches.
I_D @ T_C = 25°C	16 A - Continuous current capability with heatsink; derates to 11 A at 100°C case temperature.
Q_g	6.6–9.9 nC - Total gate charge determines driver strength requirement; compatible with standard logic-level gate drivers.
t_r/t_f	43 ns / 16 ns - Fast edge rates support >500 kHz switching in SMPS without excessive EMI or switching loss penalty.
T_j max	175°C - Enables operation in sealed enclosures or high ambient environments without forced cooling.
E_AS	25 mJ - Single-pulse avalanche energy rating validates robustness against inductive turn-off transients.

Pinout & Package

IRLR024ZTRPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal conduction. The package measures 6.7 mm × 6.2 mm × 2.4 mm and is lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <3.0 V threshold for turn-on; driven by logic-level or dedicated gate driver.
Pin 3 (Drain)	Power output (D)	High-side power node; bonded to exposed copper pad for thermal dissipation; connects to load or supply rail.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–3.0 V enables direct interface with 3.3 V/5 V microcontrollers without level-shifting.
Ultra-low R_DS(on)	58 mΩ at 10 V and 4.5 V operation maintains low conduction loss even with marginal gate drive.
Repetitive avalanche rated	Specified E_AR and I_AR curves allow safe operation under unclamped inductive switching in motor drives.
Fast body diode	t_rr = 16–24 ns and Q_rr = 11–17 nC reduce switching loss and voltage overshoot during freewheeling.
175°C junction rating	Enables use in thermally constrained industrial and automotive under-hood applications without derating.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Synchronous rectification in 12 V → 3.3 V/5 V point-of-load converters for industrial PLCs.

IC Role / Device Role: Low-side synchronous FET replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Achieves >94% efficiency at 10 A output due to 58 mΩ R_DS(on) and fast t_f = 16 ns minimizing dead-time losses.

Use Scenario: Half-bridge H-bridge for bidirectional 24 V brushed motor control in automated valves.

IC Role / Device Role: High-side and low-side switching element with integrated body diode for freewheeling paths.

Use Value: Repetitive avalanche rating (E_AR) and 175°C T_j ensure reliability during rapid direction reversal and stall conditions.

LED Constant-Current Driver

Hot-Swap Controller

Use Scenario: PWM dimming stage in 48 V LED streetlight drivers with 2–5 A string current.

IC Role / Device Role: High-side current-switching FET controlling LED string current via source-follower sensing.

Use Value: Low R_DS(on) minimizes power loss in series-pass configuration; Q_g < 10 nC enables clean 1–20 kHz PWM edges.

Use Scenario: Inrush limiting and fault protection in 24 V backplane power distribution modules.

IC Role / Device Role: Load switch with controlled turn-on slew rate and overcurrent shutdown capability.

Use Value: Gate threshold range (1.0–3.0 V) allows precise gate biasing for soft-start; R_DS(on) tolerance ensures predictable current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR2905ZTRPBF	V_DSS = 55 V, R_DS(on) = 40 mΩ @ 10 V, I_D = 21 A - lower on-resistance but higher Q_g (19 nC).	Better for high-current, low-frequency switching; less suitable for >1 MHz due to gate charge.	Select when conduction loss dominates and gate drive strength permits higher Q_g.
STP55NF06L	V_DSS = 60 V, R_DS(on) = 14 mΩ @ 10 V, I_D = 50 A - significantly lower R_DS(on) but TO-220 package, not D-Pak.	Requires through-hole PCB layout and larger heatsink; unsuitable for space-constrained SMT designs.	Choose only if board real estate and thermal mass allow TO-220 mounting and ultra-low R_DS(on) is critical.

Compared with IRLR2905ZTRPBF and STP55NF06L, the IRLR024ZTRPBF offers optimal balance of logic-level drive, D-Pak footprint, thermal performance (R_θJC = 4.28°C/W), and cost for mid-power SMT applications up to 16 A.

Availability

IRLR024ZTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor controllers, and LED drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IRLR024ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, consumer, and computing applications where thermal robustness and logic-level drivability are essential.

FAQ

Is IRLR024ZTRPBF suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) ranging from 1.0 V to 3.0 V and guaranteed R_DS(on) down to 4.5 V, it fully turns on using 3.3 V logic outputs. Measured R_DS(on) at V_GS = 4.5 V is ≤100 mΩ, supporting 8–10 A continuous current with acceptable conduction loss in compact layouts.

What is the maximum recommended PCB copper area for thermal relief?

For optimal R_θJC = 4.28°C/W, the D-Pak drain pad must be soldered to ≥250 mm² of 2 oz copper on an internal layer, connected via ≥6 thermal vias (0.3 mm diameter) to inner ground/power planes. Smaller pads increase junction temperature by up to 25°C at full 16 A load.

Does IRLR024ZTRPBF have avalanche energy rating for repetitive operation?

Yes. The datasheet specifies E_AR (repetitive avalanche energy) curves in Figures 15 and 16, validated up to 1% duty cycle and T_j ≤ 175°C. At T_j = 25°C and 1% duty cycle, E_AR = 15 mJ per pulse, enabling safe use in inductive load switching without snubbers.

Can IRLR024ZTRPBF replace IRLU024ZPbF in the same PCB footprint?

Yes. Both share identical D-Pak (TO-252) package dimensions and pinout (G-S-D). IRLR024ZTRPBF is the tape-and-reel version of the same silicon die as IRLU024ZPbF, with identical electrical specs, thermal ratings, and RoHS compliance-no layout or firmware changes required.

IRLR024ZTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 58mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.9 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR024ZTRPBF FAQ

1.How can I place an order for IRLR024ZTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR024ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR024ZTRPBF reliable?

The price and inventory of IRLR024ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024ZTRPBF is usually 5 days.

3.What payment methods are accepted for IRLR024ZTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024ZTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR024ZTRPBF?

IRLR024ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR024ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR024ZTRPBF?

For technical support, including IRLR024ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024ZTRPBF requirements.

6.How does Aetrix verify that IRLR024ZTRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR024ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024ZTRPBF meets industry standards.

7.What is the process for return or replacement of IRLR024ZTRPBF?

All IRLR024ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024ZTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR024ZTRPBF part is unused and in its original packaging.

Return procedure for IRLR024ZTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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