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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR120NTRR

Name: IRLR120NTRR
Brand: Infineon Technologies
SKU: IRLR120NTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR120NTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR120NTRR.pdf

Description:: MOSFET N-CH 100V 10A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR120NTRR from Infineon Technologies (formerly International Rectifier) is a 100V, 10A N-channel enhancement-mode power MOSFET in D-PAK (TO-252AA) package, optimized for high-efficiency DC-DC conversion and motor control. It delivers R_DS(on) = 0.185Ω @ V_GS = 10V, 6A; features fully avalanche-rated operation (E_AS = 85 mJ); and supports fast switching with t_r = 35 ns and Q_g = 20 nC - deployed in synchronous buck converters for industrial power supplies.

For engineers reviewing the IRLR120NTRR datasheet, IRLR120NTRR pinout, IRLR120NTRR application, or IRLR120NTRR equivalent, key selection criteria include verified R_DS(on) at 4.0–5.0V gate drive, unclamped inductive switching robustness, thermal resistance R_θJC = 3.1°C/W, and surface-mount D-PAK mechanical compatibility with IPC-7351B footprint standards.

Technical Context

This HEXFET® device uses fifth-generation silicon process to minimize conduction loss while maintaining rugged unclamped inductive switching capability. Its body diode exhibits t_rr = 110–160 ns and Q_rr = 410–620 nC under 100 A/µs di/dt, enabling efficient synchronous rectification without external Schottky supplementation in mid-power SMPS.

The gate threshold voltage V_GS(th) = 1.0–2.0 V ensures logic-level compatibility with 3.3V/5V microcontrollers, while g_fs = 3.1 S and C_iss = 440 pF support stable PWM control up to 500 kHz in hard-switched topologies. Thermal design relies on low R_θJC and validated PCB copper area for junction-to-case heat transfer.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V industrial systems.
R_DS(on)	0.185 Ω @ V_GS = 10 V, I_D = 6 A - Confirmed on-resistance enabling ≤1.1 W conduction loss at 6 A continuous current.
I_D (T_C = 25°C)	10 A - Continuous drain current rating at case temperature 25°C; derates linearly above 25°C at 0.32 W/°C.
E_AS	85 mJ - Single-pulse avalanche energy; validates safe operation during inductive turn-off transients in motor drives.
Q_g	20 nC - Total gate charge required for full enhancement; determines gate driver current demand (e.g., 1 A peak for 20 ns rise).
t_r/t_f	35 ns / 22 ns - Measured rise/fall times at V_DD = 50 V, I_D = 6 A, R_G = 11 Ω; defines minimum practical switching period.
R_θJC	3.1 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting via exposed drain pad for <10 W dissipation.

Pinout & Package

IRLR120NTRR is housed in a surface-mount D-PAK (TO-252AA) package with an exposed drain pad for thermal and electrical connection. The package conforms to JEDEC TO-252AA outline and supports vapor-phase, infrared, or wave soldering per AN-994 guidelines.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; requires ≤±16 V bias; input capacitance C_iss = 440 pF dominates Miller effect at high dv/dt.
2 (Drain)	Main power output terminal	Connected to high-side switch node; electrically tied to exposed metal pad for thermal path and low-inductance current return.
3 (Source)	Reference and return path	Serves as power ground reference; internal source inductance L_S = 7.5 nH affects di/dt-induced gate oscillation during body diode commutation.
4 (Drain)	Secondary drain connection	Redundant drain terminal bonded to same die region as Pin 2; reduces package inductance and improves current sharing in high-frequency switching.

Key Features

Feature	Design Value
Fully avalanche rated	Validated single-pulse E_AS = 85 mJ and repetitive E_AR = 4.8 mJ - eliminates need for external snubbers in inductive load switching.
Logic-level gate drive	V_GS(th) = 1.0–2.0 V with g_fs = 3.1 S - enables direct interface with 3.3V MCU GPIO without level-shifting circuitry.
Low gate charge	Q_g = 20 nC and Q_gd = 10 nC - reduces gate driver power loss and improves efficiency in 200–500 kHz SMPS designs.
Optimized body diode	t_rr = 110–160 ns and Q_rr = 410–620 nC - minimizes reverse recovery loss in synchronous rectifier applications.
Thermally enhanced D-PAK	R_θJC = 3.1 °C/W and exposed drain pad - supports >10 W continuous power dissipation with minimal heatsink area.

Applications

Industrial Motor Drives

Server VRMs

Use Scenario: Half-bridge gate driver stage in 24–48V BLDC motor controllers for HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: High-side N-channel switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: R_DS(on) = 0.185 Ω limits conduction loss to <1.1 W at 6 A, while t_r/t_f < 60 ns enables 20 kHz PWM without excessive switching loss.

Use Scenario: Synchronous rectifier in multiphase buck converters delivering 12V → 1.2V/100A to CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diodes to reduce forward voltage drop and improve efficiency.

Use Value: Body diode V_SD = 1.3 V at 6 A and Q_rr = 410–620 nC enable >92% efficiency at full load versus discrete diode solutions.

Telecom DC-DC Modules

Automotive Body Control Units

Use Scenario: Primary switch in isolated flyback converters powering 48V telecom line cards with strict EMI requirements.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with controlled dv/dt ≤ 5 V/ns to meet CISPR-22 Class B limits.

Use Value: Verified dv/dt rating of 5 V/ns and C_oss = 97 pF allow clean turn-off transitions without parasitic ringing or EMI spikes.

Use Scenario: Load switch for 12V battery-fed actuators (e.g., window lift, seat adjust) requiring short-circuit protection and thermal shutdown.

IC Role / Device Role / Timing Role: Protected high-side switch with built-in avalanche energy handling for inductive kickback suppression.

Use Value: E_AS = 85 mJ withstands >100,000 cycles of 12V/10A inductive turn-off without degradation per AEC-Q101 stress testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	R_DS(on) = 0.95 Ω @ 10 V; higher V_DSS = 1000 V; Zener-protected gate	Designed for high-voltage flyback snubber circuits, not low-R_DS(on) DC-DC stages	Select only when >500 V blocking is required; unsuitable for 10 A continuous conduction due to higher on-loss.
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ 10 V; TO-220 package; no avalanche rating	Optimized for high-current linear mode operation, lacks E_AS validation for inductive loads	Prefer for high-efficiency 12V/30A switching where avalanche stress is absent; avoid in motor drive or relay driving.

Compared with STP10NK100ZFP and IRFZ44NPBF, IRLR120NTRR uniquely balances low R_DS(on), validated avalanche robustness, and surface-mount D-PAK form factor - making it optimal for space-constrained, inductive-load industrial power stages where reliability and thermal performance are co-prioritized.

Availability

IRLR120NTRR is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, telecom DC-DC modules, and automotive body control units requiring stable component supply across multi-year production cycles.

Supply support for IRLR120NTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon-based power devices and wide-bandgap solutions.

IRLR120NTRR belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and computing power conversion - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR120NTRR supports 7.0 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 10 A rating at 25°C using the linear derating factor of 0.32 W/°C and R_DS(on) increase with temperature.

Does IRLR120NTRR require a gate resistor for stability?

Yes - a gate resistor (typically 10–22 Ω) is recommended to dampen ringing caused by L_S = 7.5 nH and C_iss = 440 pF interaction during fast switching. Without it, gate oscillation can exceed ±16 V absolute maximum rating and cause erratic turn-on behavior.

Can IRLR120NTRR be used in parallel configurations?

Yes, but with matched gate drive and symmetrical PCB layout. The positive temperature coefficient of R_DS(on) (0.12 V/°C) provides inherent current sharing, yet mismatched trace inductance or thermal gradients may cause imbalance above 15 A total current.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode is characterized with t_rr = 110–160 ns and Q_rr = 410–620 nC at di/dt = 100 A/µs, enabling reliable synchronous rectification in buck converters up to 300 kHz without external diode supplementation.

IRLR120NTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 185mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR120NTRR FAQ

1.How can I place an order for IRLR120NTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR120NTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR120NTRR reliable?

The price and inventory of IRLR120NTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR120NTRR is usually 5 days.

3.What payment methods are accepted for IRLR120NTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR120NTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR120NTRR?

IRLR120NTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR120NTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR120NTRR?

For technical support, including IRLR120NTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR120NTRR requirements.

6.How does Aetrix verify that IRLR120NTRR is sourced from the original manufacturer or authorized distributors?

All IRLR120NTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR120NTRR meets industry standards.

7.What is the process for return or replacement of IRLR120NTRR?

All IRLR120NTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR120NTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR120NTRR part is unused and in its original packaging.

Return procedure for IRLR120NTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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