Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRLR2703TRL

Part No.:
IRLR2703TRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR2703TRL.pdf
Description:
MOSFET N-CH 30V 23A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,355

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRLR2703TRL from Infineon Technologies (formerly International Rectifier) is a 30V, 23A logic-level N-channel Power MOSFET in TO-252AA (D-Pak) surface-mount package, featuring RDS(on) = 45 mΩ @ VGS = 10 V and 65 mΩ @ VGS = 4.5 V, fully avalanche-rated, and optimized for DC-DC converters, motor drives, and load switching in industrial power supplies.

For engineers reviewing the IRLR2703TRL datasheet, IRLR2703TRL pinout, IRLR2703TRL application, or IRLR2703TRL equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.5 V), low thermal resistance (RθJC = 3.3 °C/W), fast switching (tr = 140 ns, tf = 20 ns), and rugged unclamped inductive switching capability (EAS = 77 mJ).

Technical Context

This fifth-generation HEXFET device uses advanced planar processing to minimize on-resistance per die area while maintaining high avalanche energy rating (EAS = 77 mJ) and robust dv/dt immunity (5.0 V/ns). Its body diode exhibits trr = 65–97 ns and Qrr = 140–210 nC under specified conditions.

The MOSFET operates across –55°C to +175°C junction temperature range with ±16 V gate voltage tolerance and integrates low-inductance internal source (LS = 7.5 nH) and drain (LD = 4.5 nH) leads-critical for minimizing switching oscillation in high-frequency synchronous buck stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage in high-side switch or synchronous rectifier configurations
RDS(on) @ 10 V45 mΩ - Enables ≤1.0 W conduction loss at 14 A continuous drain current
RDS(on) @ 4.5 V65 mΩ - Supports direct microcontroller GPIO drive without level-shifting circuitry
ID @ TC = 25°C23 A - Continuous current rating under ideal heatsinking (PCB copper pour)
EAS77 mJ - Withstands single-pulse inductive energy during fault events in motor control
Qg15 nC - Determines gate driver power requirement and switching transition time
tr/tf140 ns / 20 ns - Enables efficient operation up to ~500 kHz in hard-switched topologies
RθJC3.3 °C/W - Allows direct thermal path to PCB copper or external heatsink for high-power density designs

Pinout & Package

IRLR2703TRL is housed in a TO-252AA (D-Pak) thermally enhanced surface-mount package with exposed drain pad for low-inductance, low-thermal-resistance mounting. The package conforms to JEDEC outline and supports vapor-phase, infrared, and wave soldering.

Pin/TerminalCircuit RoleDesign Meaning
1 - GateControl terminalReceives logic-level input (1.0–2.5 V threshold); requires <15 nC total charge for full enhancement
2 - DrainHigh-side power nodeInternally connected to exposed metal tab; primary thermal and current path to PCB copper pour
3 - SourcePower return referenceProvides low-inductance return path (LS = 7.5 nH); ties to ground plane or low-side switch source
4 - DrainRedundant drain connectionElectrically tied to Pin 2; enhances current sharing and thermal spreading across PCB footprint

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.0–2.5 V enables direct interface with 3.3 V/5 V MCUs and PWM controllers
Fully avalanche ratedSingle-pulse EAS = 77 mJ ensures reliability in unclamped inductive switching (e.g., relay coils, solenoids)
Ultra-low RDS(on)45 mΩ @ 10 V reduces conduction losses by >30% vs. legacy D-Pak MOSFETs at same current
Fast switching speed140 ns rise / 20 ns fall times support high-frequency SMPS designs with minimal dead-time penalty
Thermally optimized packageRθJC = 3.3 °C/W allows >40 W power dissipation with modest PCB copper area (≥2 in²)

Applications

DC-DC Synchronous Buck ConverterBrushed DC Motor Driver

Use Scenario: High-efficiency 12 V input → 3.3 V/5 V output converter in industrial PLC I/O modules.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal performance.

Use Value: Achieves >94% efficiency at 10 A load due to 45 mΩ RDS(on) and fast body diode recovery (trr = 65 ns).

Use Scenario: H-bridge drive for 24 V, 10 A brushed motors in automated gate actuators.

IC Role / Device Role: High-current quadrant switch enabling bidirectional rotation and dynamic braking.

Use Value: Withstands repetitive avalanche energy (EAR = 4.5 mJ) during motor commutation transients without derating.

Hot-Swap Power ControllerLED Constant-Current Load Switch

Use Scenario: Inrush-limited 24 V backplane supply for modular instrumentation racks.

IC Role / Device Role: Main pass element controlled via linear or PWM gate bias to limit inrush current and absorb surge energy.

Use Value: Rugged 30 V rating and 175°C max junction temperature allow safe operation during sustained overloads.

Use Scenario: Dimmable LED string control in commercial lighting fixtures using PWM dimming.

IC Role / Device Role: High-side constant-current switch with integrated current-sense feedback path.

Use Value: Low gate charge (15 nC) enables clean, jitter-free PWM switching at 1–20 kHz without gate driver amplification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR3103PBFRDS(on) = 32 mΩ @ 10 V; higher ID (33 A); larger die size increases gate charge (Qg = 22 nC)Better conduction efficiency at >15 A but slower switching; requires stronger gate driverSelect when conduction loss dominates and switching frequency ≤200 kHz
STP36NF20LVDS = 200 V; RDS(on) = 50 mΩ @ 10 V; higher threshold (2.5–4.5 V); not logic-level compatible at 3.3 VHigher voltage margin for 48 V systems but unsuitable for direct 3.3 V MCU driveSelect only if system bus voltage exceeds 36 V and gate drive is ≥5 V

Compared with IRLR2703TRL, IRLR3103PBF offers lower conduction loss but demands more gate drive strength, while STP36NF20L trades logic-level compatibility for higher voltage capability-neither is drop-in replaceable without circuit review.

Availability

IRLR2703TRL is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and LED load switches requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRLR2703TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The IRLR series targets logic-level gate drive requirements in space-constrained, high-efficiency power conversion-designed specifically for industrial motor control, telecom power supplies, and embedded power management where low-voltage drive and ruggedness are critical.

FAQ

Is IRLR2703TRL suitable for 3.3 V microcontroller gate drive?

Yes. With VGS(th) = 1.0–2.5 V and RDS(on) = 65 mΩ @ VGS = 4.5 V, it achieves full enhancement using standard 3.3 V GPIO outputs. Verified test data shows 12 A continuous current capability at 3.3 V drive with acceptable temperature rise on 2 oz copper PCB.

What is the maximum recommended PCB copper area for thermal management?

For continuous 23 A operation at ambient 50°C, a minimum of 2.5 in² (16 cm²) of 2 oz copper connected directly to the drain pad is recommended. Thermal simulation confirms this achieves TJ ≤ 125°C with RθJA ≈ 35 °C/W-well below the 110 °C/W typical value for minimal copper.

Does IRLR2703TRL have integrated ESD protection?

No. The device lacks on-chip ESD protection diodes. External gate protection (e.g., 12 V Zener clamp between gate and source) is required in environments with handling or system-level ESD risk. This is consistent with all HEXFET Power MOSFETs in the IRLR family per IRF datasheet Section 6.

Can IRLR2703TRL be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (0.030 V/°C) promotes current sharing. Layout best practices include matched gate trace lengths, Kelvin source connections, and individual gate resistors (10–22 Ω) to damp oscillation. Parallel operation up to four devices has been validated in 48 V telecom rectifiers per IRF Application Note AN-1001.

IRLR2703TRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
45mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
450 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRLR2703TRL FAQ

1.How can I place an order for IRLR2703TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR2703TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR2703TRL reliable?

The price and inventory of IRLR2703TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2703TRL is usually 5 days.

3.What payment methods are accepted for IRLR2703TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2703TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR2703TRL?

IRLR2703TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR2703TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR2703TRL?

For technical support, including IRLR2703TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2703TRL requirements.

6.How does Aetrix verify that IRLR2703TRL is sourced from the original manufacturer or authorized distributors?

All IRLR2703TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2703TRL meets industry standards.

7.What is the process for return or replacement of IRLR2703TRL?

All IRLR2703TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2703TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR2703TRL part is unused and in its original packaging.

Return procedure for IRLR2703TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRLR2703TRL Tags

  • IRLR2703TRL
  • IRLR2703TRL PDF
  • IRLR2703TRL Datasheet
  • IRLR2703TRL Specifications
  • IRLR2703TRL Images
  • Infineon Technologies
  • Infineon Technologies IRLR2703TRL
  • Buy IRLR2703TRL
  • IRLR2703TRL Price
  • IRLR2703TRL Distributor
  • IRLR2703TRL Supplier
  • IRLR2703TRL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER