Infineon Technologies IRLR2703TRLPBF

Overview

IRLR2703TRLPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 23A logic-level N-channel Power MOSFET in D-Pak (TO-252AA) package, featuring 45 mΩ R_DS(on) at V_GS = 10 V and 65 mΩ at V_GS = 4.5 V, fully avalanche rated, and optimized for high-efficiency DC-DC converters and motor control switches.

For engineers reviewing the IRLR2703TRLPBF datasheet, IRLR2703TRLPBF pinout, IRLR2703TRLPBF application, or IRLR2703TRLPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.5 V), low R_DS(on) at 4.5 V, fast switching (t_r = 140 ns, t_f = 20 ns), and surface-mount D-Pak thermal performance (R_θJA = 50 °C/W on PCB).

Technical Context

This fifth-generation HEXFET device uses advanced planar processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability (E_AS = 77 mJ). Its body diode exhibits t_rr = 65–97 ns and Q_rr = 140–210 nC under specified conditions.

The MOSFET supports logic-level gate drive down to 4.5 V, with g_fs = 6.4 S at V_DS = 25 V and I_D = 14 A, and integrates low-inductance internal source (L_S = 7.5 nH) and drain (L_D = 4.5 nH) paths to minimize switching oscillation in high-dv/dt applications.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal conduction and mechanical stability on PCB. Standard three-terminal configuration: Gate (G), Drain (D), Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLR3103TRLPBF and SI2303DS-T1-GE3, the IRLR2703TRLPBF delivers optimal balance of 4.5 V drivability, 23 A current capacity, and D-Pak thermal performance-making it the preferred choice for medium-power industrial switching where board area and thermal management are jointly constrained.

Availability

IRLR2703TRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and hot-swap controllers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRLR2703TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET innovation.

This device belongs to the fifth-generation HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and consumer power supplies.

FAQ

Is IRLR2703TRLPBF compatible with 3.3 V microcontroller GPIOs?

Yes - its gate threshold voltage (V_GS(th)) is specified from 1.0 V to 2.5 V, and R_DS(on) is characterized at 4.5 V. While full enhancement requires ≥4.5 V, many designs successfully use it with 3.3 V drive in non-critical, low-duty-cycle applications; however, R_DS(on) increases significantly below 4.5 V and must be verified per operating point.

What is the maximum continuous current at 100°C case temperature?

The datasheet specifies I_D = 16 A at T_C = 100°C with V_GS = 10 V. This reflects thermal limitation of the D-Pak package, not silicon capability. Derating follows 0.30 W/°C above 25°C ambient, consistent with its 45 W P_D rating at T_C = 25°C.

Does IRLR2703TRLPBF have integrated ESD protection?

No - it lacks on-chip ESD protection diodes. Per datasheet handling guidance, gate oxide is susceptible to damage from static discharge. Recommended practice includes using grounded wrist straps, conductive foam storage, and series gate resistors (≥10 Ω) in PCB layout to limit transient current during hot-plug or probing.

Can this MOSFET replace IRLR2905 in an existing design?

Not directly - the IRLR2905 is a 55 V, 42 A device with higher voltage rating and current capacity. While both are D-Pak logic-level MOSFETs, substituting IRLR2703TRLPBF in a 55 V system risks avalanche failure. It is only suitable as a drop-in replacement in 30 V or lower systems where 23 A peak current suffices and layout thermal relief matches D-Pak footprint.