Infineon Technologies IRLR2705PBF

Overview

IRLR2705PBF from Infineon is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252AA) package, rated for 55 V V_DSS, 28 A continuous drain current at 25°C, and 0.040 Ω R_DS(on) at V_GS = 10 V. It features fully avalanche-rated ruggedness, fast switching (t_r = 100 ns), and low gate charge (Q_g = 25 nC), enabling high-efficiency DC-DC conversion in compact power supplies.

For engineers reviewing the IRLR2705PBF datasheet, IRLR2705PBF pinout, IRLR2705PBF application, or IRLR2705PBF equivalent, key selection criteria include its logic-level gate drive compatibility with 3.3 V/5 V microcontrollers, thermal resistance (R_θJC = 2.2 °C/W), body diode recovery performance (t_rr = 76–110 ns), and surface-mount D-Pak footprint suitability for high-current PCB layouts.

Technical Context

This HEXFET® device uses fifth-generation silicon process technology to minimize conduction loss while maintaining robust unclamped inductive switching capability (E_AS = 110 mJ). Its gate threshold voltage (V_GS(th) = 1.0–2.0 V) ensures reliable turn-on with standard logic drivers, and its low Q_gd/Q_gs ratio (14 nC / 5.2 nC) supports stable high-frequency operation up to several hundred kHz.

The integrated body diode exhibits V_SD = 1.3 V at 17 A and t_rr = 76 ns (typ.), making it suitable for synchronous rectification and freewheeling paths where reverse recovery behavior directly impacts efficiency and EMI. Thermal design is enabled by validated junction-to-case thermal resistance of 2.2 °C/W under standard mounting conditions.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to the internal drain structure and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLR3110PBF and STP16NF06L, the IRLR2705PBF delivers optimal balance of low conduction loss (0.040 Ω), surface-mount thermal efficiency (2.2 °C/W), and logic-level compatibility for 12–24 V systems-making it the preferred choice for space-constrained, high-current DC-DC and motor control designs.

Availability

IRLR2705PBF is available at Aetrix Electronics and suitable for DC-DC buck converters, automotive body control modules, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IRLR2705PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

The IRLR series belongs to Infineon's logic-level HEXFET® Power MOSFET product line, engineered for high-current, low-voltage switching in automotive, computing, and industrial power supplies where gate drive simplicity and thermal efficiency are critical.

FAQ

Is IRLR2705PBF suitable for high-frequency switching above 500 kHz?

No. While its t_r = 100 ns and Q_g = 25 nC support operation up to ~300–400 kHz in well-designed layouts, gate drive loop inductance and body diode recovery (t_rr = 76–110 ns) become limiting factors beyond that. For >500 kHz, consider devices with lower Q_gd and faster t_rr, such as Infineon's OptiMOS™ 5 series.

Can IRLR2705PBF be used in a high-side configuration with 12 V supply?

Yes, but requires a gate driver capable of providing V_GS ≥ 10 V referenced to the source (e.g., bootstrap or isolated driver). The device itself is not self-biasing; its logic-level threshold applies only in low-side configurations where source is grounded. In high-side use, insufficient gate overdrive risks partial turn-on and thermal runaway.

What is the maximum continuous current at 100°C case temperature?

The datasheet specifies I_D = 20 A at T_C = 100°C with V_GS = 10 V. This derating reflects thermal limits-not package current capacity alone-but assumes proper PCB copper area (1"² FR-4) and ambient airflow. Exceeding 20 A at this temperature risks exceeding T_J(max) = 175°C even with R_θJC = 2.2 °C/W.

Does IRLR2705PBF have built-in ESD protection?

No. The device has no integrated ESD protection circuitry. Gate oxide is sensitive to static discharge; handling requires strict adherence to J-STD-020 guidelines, including grounded workstations, ionized air, and anti-static packaging. Gate-source voltage must never exceed ±16 V, and transient spikes above 20 V can cause irreversible damage.