Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR2705TR

Name: IRLR2705TR
Brand: Infineon Technologies
SKU: IRLR2705TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLR2705TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR2705TR.pdf

Description:: MOSFET N-CH 55V 28A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,187

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLR2705TR from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel Power MOSFET in D-Pak (TO-252AA) package, rated for 55 V V_DS, 28 A continuous drain current at T_C = 25°C, and 0.040 Ω R_DS(on) at V_GS = 10 V. It features ultra-low on-resistance, fast switching, full avalanche rating, and surface-mount compatibility-used in DC-DC converters, motor drivers, and load switches where efficient high-current switching at 5 V gate drive is required.

For engineers reviewing the IRLR2705TR datasheet, IRLR2705TR pinout, IRLR2705TR application, or IRLR2705TR equivalent, key selection criteria include its logic-level gate threshold (1.0–2.0 V), 55 V breakdown voltage, 28 A thermal-limited current, 25 nC total gate charge, and D-Pak thermal resistance (R_θJC = 2.2 °C/W).

Technical Context

This fifth-generation HEXFET device uses advanced silicon processing to minimize R_DS(on) per die area while maintaining ruggedness. Its gate threshold (V_GS(th) = 1.0–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting. The integrated body diode has t_rr = 76–110 ns and Q_rr = 190–290 nC under specified conditions.

The MOSFET supports unclamped inductive switching with E_AS = 110 mJ (single-pulse) and I_AR = 16 A, and operates across –55°C to +175°C junction temperature. Its C_iss = 880 pF, C_oss = 220 pF, and C_rss = 94 pF at V_DS = 25 V enable predictable high-frequency switching behavior in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck converters or half-bridge legs.
R_DS(on)	0.040 Ω @ V_GS = 10 V - Enables ≤1.1 W conduction loss at 16.5 A, critical for thermally constrained PCB layouts.
I_D (continuous)	28 A @ T_C = 25°C - Sustains high load current when heatsinked; derates to 20 A at 100°C case temperature.
Q_g	25 nC - Determines gate driver power requirement and switching speed; compatible with standard 1–2 A peak gate drivers.
t_r/t_f	100 ns / 29 ns - Supports >500 kHz switching in SMPS designs with low switching loss trade-off.
E_AS	110 mJ - Withstands single-pulse inductive energy without failure; validates robustness in relay/motor flyback scenarios.
R_θJC	2.2 °C/W - Enables precise junction temperature estimation when mounted on copper pour; critical for thermal design validation.

Pinout & Package

The IRLR2705TR is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical performance. Lead assignments conform to JEDEC outline TO-252AA.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires <1.0 µA leakage at ±16 V; driven by logic-level MCU GPIO or dedicated gate driver.
2	Drain	Main high-side current path; electrically and thermally connected to exposed backside pad; ties to input bus or switch node.
3	Source	Reference node for gate drive and current sensing; connects to ground or low-side return path.
4	Drain	Second drain connection; paralleled with Pin 2 to reduce package inductance and improve thermal spreading to PCB copper.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–2.0 V enables direct interface with 3.3 V/5 V controllers-eliminates external level shifters in compact designs.
Fully avalanche-rated	Rated for 110 mJ single-pulse avalanche energy-ensures reliability in inductive load switching without snubbers.
Ultra-low R_DS(on)	0.040 Ω @ 10 V reduces conduction loss by >30% vs. legacy 55 V MOSFETs-improves efficiency in 12 V input systems.
Surface-mount D-Pak	TO-252AA footprint supports automated assembly and offers 2.2 °C/W junction-to-case thermal resistance-enables high-power density layout.
Fast body diode	t_rr = 76–110 ns and Q_rr = 190–290 nC minimize reverse recovery loss in synchronous rectification and freewheeling paths.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 12 V or 24 V battery to 3.3 V/5 V for microcontroller and sensor rails in automotive body control modules.

IC Role / Device Role: High-side synchronous rectifier switch operating at 250–500 kHz with 5 V gate drive from PWM controller.

Use Value: 0.040 Ω R_DS(on) limits conduction loss to <1.1 W at 16.5 A, enabling compact thermal design without forced air cooling.

Use Scenario: H-bridge drive for 12 V brushed motors in power seats, HVAC actuators, or industrial positioning stages.

IC Role / Device Role: Low-side switching element handling bidirectional 20 A peak current with PWM-controlled direction and speed.

Use Value: Full avalanche rating (E_AS = 110 mJ) absorbs inductive kickback during rapid PWM turn-off-reducing need for external clamping diodes.

Hot-Swap Controller

LED Constant-Current Driver

Use Scenario: Inrush current limiting and fault protection for 48 V telecom or server backplane slots during live insertion.

IC Role / Device Role: Series pass element controlled by dedicated hot-swap IC to ramp voltage and trip on overcurrent.

Use Value: 55 V V_DS withstands transient surges up to 60 V; 28 A rating supports ≥20 A sustained load with margin.

Use Scenario: Dimmable constant-current driver for high-brightness LED arrays in architectural lighting or signage.

IC Role / Device Role: Low-side current sink modulated via PWM to regulate LED string current up to 17 A.

Use Value: Low V_SD (≤1.3 V at 17 A) minimizes power dissipation in linear dimming mode-reducing heatsink size and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44N	R_DS(on) = 0.028 Ω @ 10 V; higher Q_g = 34 nC; same V_DS = 55 V; TO-220 package	Requires larger board space and heatsinking; better conduction loss but slower switching than IRLR2705TR	Select when lowest R_DS(on) dominates and through-hole mounting is acceptable.
STP55NF06L	R_DS(on) = 0.018 Ω @ 10 V; V_GS(th) = 1.0–2.5 V; TO-220 package; no official avalanche rating	Lacks documented E_AS spec; higher risk in inductive switching without snubber design	Prefer only in non-inductive, low-dv/dt applications where conduction loss is primary concern.

Compared with IRLR2705TR, the IRLZ44N offers lower conduction loss but sacrifices switching speed and surface-mount compatibility, while the STP55NF06L delivers superior R_DS(on) but lacks verified avalanche ruggedness-making IRLR2705TR the balanced choice for thermally constrained, inductive-load SMPS and motor control.

Availability

IRLR2705TR is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, and hot-swap controllers requiring stable component supply, long-term manufacturability, and JEDEC-compliant D-Pak packaging.

Supply support for IRLR2705TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRLR series belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in space-constrained, thermally demanding applications such as automotive body electronics and industrial power supplies.

FAQ

Is IRLR2705TR suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage of 1.0–2.0 V and guaranteed turn-on at V_GS = 4.0 V (R_DS(on) = 0.065 Ω), the IRLR2705TR fully enhances using 3.3 V logic outputs. However, R_DS(on) increases to 0.051 Ω at V_GS = 5.0 V and 0.065 Ω at V_GS = 4.0 V-designers should verify conduction loss at target current and temperature.

What is the maximum recommended PCB copper area for thermal relief?

For optimal thermal performance, the D-Pak drain pad (Pins 2 and 4) should be soldered to ≥100 mm² of 2 oz copper on an internal layer, connected via ≥4 thermal vias (0.3 mm diameter) to inner ground planes. This achieves near-datasheet R_θJA ≈ 50 °C/W in standard 4-layer boards.

Does IRLR2705TR have a specified SOA curve for linear-mode operation?

Yes. Figure 8 in the official datasheet provides the Maximum Safe Operating Area (SOA) for pulsed operation up to 10 ms, bounded by R_DS(on), package power limit, and thermal runaway. Linear-mode use is restricted to pulse widths ≤100 µs at 25°C ambient, with strict derating above 25°C case temperature.

Can IRLR2705TR replace IRLU2705 in existing designs?

Yes, with mechanical adaptation. Both share identical die and electrical specs, but IRLU2705 uses TO-251AA (IPAK) with straight leads for through-hole mounting, while IRLR2705TR uses TO-252AA (D-Pak) for surface mount. PCB footprint, stencil design, and reflow profile must be updated-no electrical redesign is needed.

IRLR2705TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR2705TR FAQ

1.How can I place an order for IRLR2705TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR2705TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR2705TR reliable?

The price and inventory of IRLR2705TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2705TR is usually 5 days.

3.What payment methods are accepted for IRLR2705TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2705TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR2705TR?

IRLR2705TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR2705TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR2705TR?

For technical support, including IRLR2705TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2705TR requirements.

6.How does Aetrix verify that IRLR2705TR is sourced from the original manufacturer or authorized distributors?

All IRLR2705TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2705TR meets industry standards.

7.What is the process for return or replacement of IRLR2705TR?

All IRLR2705TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2705TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR2705TR part is unused and in its original packaging.

Return procedure for IRLR2705TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…