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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR2705TRLPBF

Name: IRLR2705TRLPBF
Brand: Infineon Technologies
SKU: IRLR2705TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR2705TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR2705TRLPBF.pdf

Description:: MOSFET N-CH 55V 28A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR2705TRLPBF from Infineon is a logic-level N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) package, rated for 55 V V_DSS, 28 A continuous drain current at T_C = 25°C, and 0.040 Ω R_DS(on) at V_GS = 10 V. It serves as a high-efficiency switching element in DC-DC converters, motor drivers, and load switches where low gate drive voltage and fast switching are required.

For engineers reviewing the IRLR2705TRLPBF datasheet, IRLR2705TRLPBF pinout, IRLR2705TRLPBF application, or IRLR2705TRLPBF equivalent, key selection criteria include its logic-level gate threshold (1.0–2.0 V), avalanche-rated ruggedness (110 mJ single-pulse), 5.2 nC Q_gs, 14 nC Q_gd, and thermal resistance of 2.2 °C/W (junction-to-case).

Technical Context

This MOSFET employs Infineon's fifth-generation HEXFET process to achieve ultra-low on-resistance per die area while maintaining fast switching (t_r = 100 ns, t_f = 29 ns) and robust unclamped inductive switching capability. Its body diode supports synchronous rectification with t_rr = 76–110 ns and Q_rr = 190–290 nC.

The device is fully characterized for operation across –55°C to +175°C junction temperature, with gate drive compatibility down to 4.0 V (R_DS(on) = 0.065 Ω), enabling direct interfacing with 5 V and 3.3 V microcontrollers without level-shifting circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche conduction; suitable for 48 V nominal bus systems.
R_DS(on) @ V_GS = 10 V	0.040 Ω - Enables <1.1 W conduction loss at 16 A DC, critical for thermally constrained PCB layouts.
I_D (T_C = 25°C)	28 A - Continuous current rating under ideal heatsinking; derates to 20 A at 100°C case temperature.
Q_g	25 nC - Total gate charge determines driver strength requirement; enables efficient 100 kHz+ PWM operation.
E_AS	110 mJ - Single-pulse avalanche energy rating confirms ruggedness in inductive load switching without external snubbers.
t_r/t_f	100/29 ns - Fast edge rates reduce switching losses and EMI generation in high-frequency SMPS designs.
R_θJC	2.2 °C/W - Junction-to-case thermal resistance enables direct thermal pad mounting to copper planes or heatsinks.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical performance. Three terminals: Gate (G), Drain (D), Source (S). Standard footprint per Infineon AN-994; requires thermal via pattern under drain pad for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Logic-level compatible (V_GS(th) = 1.0–2.0 V); accepts 3.3 V/5 V MCU outputs directly.
D	Drain connection	High-side or low-side switch node; electrically and thermally connected to exposed metal pad.
S	Source reference	Common return path for load current; ties to power ground or source of high-side configuration.

Key Features

Feature	Design Value
Logic-Level Gate Drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) = 0.065 Ω), eliminating need for gate driver ICs in 5 V systems.
Ultra-Low R_DS(on)	0.040 Ω at 10 V enables >96% efficiency in 12 V/10 A buck converters with minimal thermal margin.
Fully Avalanche Rated	110 mJ E_AS and 16 A I_AR allow reliable operation in unclamped inductive switching without external protection.
Fast Switching Speed	25 nC Q_g and 14 nC Q_gd support clean 500 kHz PWM edges with low Miller-induced shoot-through risk.
Lead-Free Construction	RoHS-compliant Pb-free finish (PbF suffix) meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1).

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V battery to 12 V for automotive infotainment modules.

IC Role / Device Role / Timing Role: Synchronous high-side switch in fixed-frequency 200 kHz buck topology.

Use Value: 0.040 Ω R_DS(on) limits conduction loss to 0.64 W at 4 A, reducing heatsink requirements by 40% vs. 0.07 Ω alternatives.

Use Scenario: H-bridge half-bridge leg controlling 24 V, 8 A brushed motor in industrial actuator.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 29 ns) to minimize cross-conduction during direction reversal.

Use Value: 110 mJ E_AS withstands motor back-EMF spikes during abrupt stop, eliminating need for TVS clamping.

Hot-Swap Load Switch

LED Constant-Current Driver

Use Scenario: Inrush-limited 24 V supply enable for server backplane cards.

IC Role / Device Role / Timing Role: Low-R_DS(on) series pass element controlled by soft-start gate ramp.

Use Value: 0.051 Ω R_DS(on) at V_GS = 5 V ensures <1.3 V drop at 25 A, meeting PCIe hot-plug voltage tolerance.

Use Scenario: Dimmable 36 V, 1.5 A LED string driver in architectural lighting.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–5 kHz.

Use Value: Body diode t_rr = 76 ns minimizes reverse recovery loss during PWM freewheeling, improving thermal stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3103TRLPBF	V_DSS = 30 V, R_DS(on) = 0.009 Ω @ 10 V, lower voltage rating	Better suited for 12–24 V systems requiring sub-10 mΩ on-resistance	Select when bus voltage ≤30 V and lowest possible conduction loss is critical.
STP55NF06L	V_DSS = 60 V, R_DS(on) = 0.018 Ω @ 10 V, TO-220 package	Higher thermal mass but through-hole mounting; lacks logic-level drive (V_GS(th) = 2–4 V)	Choose only if board layout allows TO-220 and gate drive ≥5 V is available.

Compared with IRLR3103TRLPBF and STP55NF06L, the IRLR2705TRLPBF uniquely balances 55 V rating, true logic-level operation (V_GS(th) ≤2.0 V), and D-Pak thermal performance-making it optimal for space-constrained 48 V industrial and automotive loads where gate drive headroom is limited.

Availability

IRLR2705TRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and LED drivers requiring stable component supply and lead-free compliance.

Supply support for IRLR2705TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRLR2705TRLPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in compact surface-mount power conversion and motor control applications.

FAQ

Is IRLR2705TRLPBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage of 1.0–2.0 V and full enhancement at V_GS = 4.0 V (R_DS(on) = 0.065 Ω), it operates reliably with 3.3 V GPIO outputs. However, R_DS(on) increases ~63% versus 10 V drive, so thermal design must account for higher conduction loss at full load.

What is the maximum recommended PCB copper area for thermal relief?

Per Infineon AN-994, a minimum 1" × 1" FR-4 copper pour with ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) under the drain pad achieves R_θJA ≈ 50 °C/W. Larger copper areas further reduce ambient temperature rise but yield diminishing returns beyond 2" × 2".

Does IRLR2705TRLPBF have integrated ESD protection?

No. The device has no built-in ESD protection diodes on gate or drain terminals. External gate resistors (≥10 Ω) and transient suppressors are recommended in handling and system-level ESD-prone environments per IEC 61000-4-2 Level 4.

Can it replace IRLR2905 in existing designs?

Yes, with verification. Both share D-Pak package and logic-level drive, but IRLR2905 has higher V_DSS (60 V) and lower R_DS(on) (0.025 Ω). IRLR2705TRLPBF offers sufficient margin for ≤55 V systems but may require thermal review due to 60% higher on-resistance at same current.

IRLR2705TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR2705TRLPBF FAQ

1.How can I place an order for IRLR2705TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR2705TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR2705TRLPBF reliable?

The price and inventory of IRLR2705TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2705TRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR2705TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2705TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR2705TRLPBF?

IRLR2705TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR2705TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR2705TRLPBF?

For technical support, including IRLR2705TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2705TRLPBF requirements.

6.How does Aetrix verify that IRLR2705TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR2705TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2705TRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR2705TRLPBF?

All IRLR2705TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2705TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR2705TRLPBF part is unused and in its original packaging.

Return procedure for IRLR2705TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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