Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR2705TRRPBF

Name: IRLR2705TRRPBF
Brand: Infineon Technologies
SKU: IRLR2705TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLR2705TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR2705TRRPBF.pdf

Description:: MOSFET N-CH 55V 28A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,432

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLR2705TRRPBF from Infineon is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252AA) package, rated for 55 V V_DSS, 28 A continuous drain current at 25°C, and 0.040 Ω R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters and motor drives.

For engineers reviewing the IRLR2705TRRPBF datasheet, IRLR2705TRRPBF pinout, IRLR2705TRRPBF application, or IRLR2705TRRPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), avalanche ruggedness (E_AS = 110 mJ), thermal resistance (R_θJC = 2.2 °C/W), fast switching (t_r = 100 ns), and body diode recovery (t_rr = 76–110 ns).

Technical Context

This MOSFET employs Infineon's fifth-generation HEXFET process to minimize conduction loss while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (1.0–2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

The device integrates a fast, low-Q_rr body diode (Q_rr = 190–290 nC, t_rr = 76–110 ns) and exhibits low gate charge (Q_g = 25 nC, Q_gd = 14 nC), supporting high-frequency operation up to several hundred kHz in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche breakdown; suitable for 48 V bus and automotive 36 V systems.
R_DS(on) @ V_GS = 10 V	0.040 Ω - Conduction loss of ≤11.2 W at 17 A, enabling high-efficiency power stages.
I_D (25°C)	28 A - Continuous drain current rating with adequate heatsinking; derates to 20 A at 100°C case temperature.
E_AS	110 mJ - Single-pulse avalanche energy rating confirms ruggedness under inductive load switching faults.
Q_g	25 nC - Total gate charge determines driver strength requirement; supports <500 kHz PWM with moderate gate drivers.
t_r/t_f	100 ns / 29 ns - Fast switching transitions reduce switching losses in SMPS and motor control inverters.
R_θJC	2.2 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power dissipation.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Logic-level compatible input (V_GS(th) = 1.0–2.0 V); requires <25 nC total charge for full turn-on.
Drain (D)	High-side current path	Connected to exposed metal tab; carries full load current and must be thermally coupled to heatsink.
Source (S)	Reference node	Common return for gate drive and load current; internal source inductance (L_S = 7.5 nH) affects switching ringing.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.0 V (R_DS(on) = 0.065 Ω), enabling direct interface with 3.3 V/5 V MCUs.
Ultra-low R_DS(on)	0.040 Ω at 10 V ensures <12 W conduction loss at 17 A, reducing thermal stress in compact layouts.
Fully avalanche-rated	Rated for 110 mJ single-pulse avalanche energy, eliminating need for external snubbers in inductive switching.
Fast body diode	Reverse recovery time 76–110 ns and Q_rr = 190–290 nC support synchronous rectification in buck converters.
Lead-free construction	RoHS-compliant per JEDEC J-STD-020; qualified to consumer-level reflow profile (peak 260°C).

Applications

DC-DC Synchronous Buck Converter

Automotive Body Control Module (BCM)

Use Scenario: High-efficiency 12 V → 3.3 V/5 V conversion for infotainment and ADAS ECUs.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >92% efficiency at 10 A output due to 0.040 Ω R_DS(on) and fast body diode recovery (t_rr ≤ 110 ns).

Use Scenario: Load switching for interior lighting, window lifters, and seat motors.

IC Role / Device Role: Low-side power switch controlled by 5 V microcontroller GPIO.

Use Value: Logic-level gate (V_GS(th) ≤ 2.0 V) eliminates external level shifter; 28 A rating supports peak motor surge currents.

Industrial Motor Drive Half-Bridge

Server VRM High-Current Phase Leg

Use Scenario: 24–48 V BLDC inverter stage with discrete half-bridge topology.

IC Role / Device Role: Low-side switch in complementary pair with high-side N-channel MOSFET + bootstrap gate driver.

Use Value: Avalanche rating (E_AS = 110 mJ) withstands inductive kickback during commutation faults.

Use Scenario: Multiphase CPU/GPU voltage regulator delivering >100 A at <1.2 V.

IC Role / Device Role: Bottom FET in interleaved buck phase leg, operating at 300–600 kHz.

Use Value: Low Q_g (25 nC) and Q_gd (14 nC) minimize driver loss and improve duty-cycle fidelity at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3103TRPbF	V_DSS = 30 V, R_DS(on) = 0.013 Ω @ 10 V, lower voltage rating	Restricted to ≤24 V systems; higher current density but reduced blocking margin	Select when bus voltage ≤24 V and lowest possible conduction loss is critical.
STP120N55F6	V_DSS = 55 V, R_DS(on) = 0.0065 Ω @ 10 V, TO-220 package, non-logic-level (V_GS(th) = 2–4 V)	Requires gate driver for 3.3 V control; superior R_DS(on) but larger footprint and no surface-mount compatibility	Choose for higher-current, through-hole designs where gate drive voltage ≥5 V is available.

Compared with IRLR3103TRPbF and STP120N55F6, the IRLR2705TRRPBF uniquely balances 55 V rating, logic-level drive, D-Pak mountability, and 0.040 Ω on-resistance-making it optimal for space-constrained 36–48 V industrial and automotive low-side switching.

Availability

IRLR2705TRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, industrial motor drives, and server VRMs requiring stable component supply, RoHS compliance, and surface-mount manufacturability.

Supply support for IRLR2705TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions.

The IRLR2705TRRPBF belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability switching in automotive, industrial, and computing power supplies.

FAQ

Is IRLR2705TRRPBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–2.0 V and full enhancement at V_GS = 4.0 V (R_DS(on) = 0.065 Ω), it operates reliably with 3.3 V logic outputs. For minimal R_DS(on), use ≥5 V drive; for marginal cases, verify gate driver sink/source capability ≥2 A peak.

What is the maximum continuous current at 85°C case temperature?

Per the derating curve (Fig. 9), continuous drain current at T_C = 85°C is approximately 23 A. This is calculated from linear derating: 28 A − (85−25) × 0.45 A/°C = 28 − 27 = 1 A - but actual limit is governed by package thermal saturation, with datasheet specifying 20 A at 100°C and 28 A at 25°C; interpolation yields ~23 A at 85°C.

Does the body diode support synchronous rectification in buck converters?

Yes. The integrated body diode has t_rr = 76–110 ns and Q_rr = 190–290 nC at di/dt = 100 A/µs, enabling efficient synchronous rectification up to ~300 kHz in buck topologies without excessive shoot-through risk or reverse recovery loss.

Can IRLR2705TRRPBF replace IRLR2905 in an existing design?

No. Although both are D-Pak logic-level MOSFETs, the IRLR2905 has V_DSS = 55 V but R_DS(on) = 0.023 Ω @ 10 V and higher Q_g (42 nC). Substituting IRLR2705TRRPBF increases conduction loss by ~75% and reduces gate drive demand, requiring layout and thermal review for viability.

IRLR2705TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR2705TRRPBF FAQ

1.How can I place an order for IRLR2705TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR2705TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR2705TRRPBF reliable?

The price and inventory of IRLR2705TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2705TRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR2705TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2705TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR2705TRRPBF?

IRLR2705TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR2705TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR2705TRRPBF?

For technical support, including IRLR2705TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2705TRRPBF requirements.

6.How does Aetrix verify that IRLR2705TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR2705TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2705TRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR2705TRRPBF?

All IRLR2705TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2705TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR2705TRRPBF part is unused and in its original packaging.

Return procedure for IRLR2705TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…