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Infineon Technologies IRLR2905PBF
- Part No.:
- IRLR2905PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR2905PBF.pdf
- Description:
- MOSFET N-CH 55V 42A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,097
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Product details
Overview
IRLR2905PBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel Power MOSFET in D-Pak (TO-252AA) package, rated for 55 V V(BR)DSS, 42 A continuous drain current at 25°C, 0.027 Ω RDS(on) at VGS = 10 V, and fully avalanche-rated for rugged switching in DC-DC converters and motor control circuits.
For engineers reviewing the IRLR2905PBF datasheet, IRLR2905PBF pinout, IRLR2905PBF application, or IRLR2905PBF equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 4.0–5.0 V gate voltage, fast switching (tr = 84 ns, tf = 15 ns), and surface-mount thermal performance (RθJA = 50 °C/W on 1"² FR-4 PCB).
Technical Context
This fifth-generation HEXFET device uses advanced planar processing to minimize on-resistance per die area while maintaining robust avalanche energy rating (EAS = 210 mJ). Its body diode exhibits 1.3 V forward drop at 25 A and 80–120 ns reverse recovery time under defined di/dt conditions.
The MOSFET supports high-speed switching with 48 nC total gate charge and 25 nC Miller charge, enabling efficient operation in synchronous buck converters and half-bridge motor drivers where gate drive strength and dv/dt immunity (5.0 V/ns) are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 55 V - Withstands up to 55 V drain-source voltage before breakdown; suitable for 48 V bus systems. |
| RDS(on) | 0.027 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 42 A; critical for high-efficiency power stages. |
| ID (TC = 25°C) | 42 A - Maximum continuous drain current with heatsinking; limited to 20 A by package thermal constraint. |
| EAS | 210 mJ - Single-pulse avalanche energy rating ensures reliability during inductive load switching transients. |
| Qg / Qgd | 48 nC / 25 nC - High Miller charge demands careful gate driver sizing to avoid shoot-through in bridge configurations. |
| tr / tf | 84 ns / 15 ns - Fast edge rates support >200 kHz switching frequencies with minimized switching losses. |
| RθJA | 50 °C/W - Measured on 1"² FR-4 PCB; defines thermal design margin for unheatsinked surface-mount layouts. |
Pinout & Package
D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement and mechanical stability. Standard three-terminal configuration optimized for automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab / Pin 2 | Drain (D) | Internally connected to exposed copper pad; primary heat path and high-current output node. |
| Pin 1 | Gate (G) | Logic-level input requiring ≥4.0 V for full enhancement; low threshold enables direct microcontroller drive. |
| Pin 3 | Source (S) | Power return path and reference for gate drive; forms common node with body diode cathode. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.0–2.0 V enables direct interface with 3.3 V/5 V MCUs without level-shifting circuitry. |
| Ultra-low RDS(on) | 0.027 Ω at 10 V reduces conduction loss by >30% vs. legacy 40 mΩ devices in same package. |
| Fully avalanche-rated | 210 mJ single-pulse EAS allows safe operation in unclamped inductive switching without external snubbers. |
| Fast body diode | 80–120 ns trr and 210–320 nC Qrr support synchronous rectification and ZVS topologies. |
| Lead-free construction | Pb-free terminations and RoHS-compliant packaging meet industrial and automotive environmental requirements. |
Applications
| DC-DC Synchronous Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V–48 V input to 3.3 V/5 V/12 V output conversion in telecom power supplies. IC Role / Device Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss. Use Value: 0.027 Ω RDS(on) cuts conduction loss by ~65% vs. 0.08 Ω alternative, improving full-load efficiency by 1.8–2.3%. | Use Scenario: H-bridge control of 24 V brushed motors in industrial actuators and robotic joints. IC Role / Device Role: High-current quadrant switch handling bidirectional motor current up to 42 A peak. Use Value: Fully rated avalanche capability absorbs inductive kickback during PWM commutation without failure. |
| LED Constant-Current Driver | Hot-Swap Controller |
Use Scenario: Precision current regulation for high-brightness LED strings in architectural lighting. IC Role / Device Role: Low-side current-sense switch operating in linear mode with active thermal management. Use Value: 175°C max junction temperature and 0.71 W/°C derating allow stable 3–5 A constant current with minimal heatsink. | Use Scenario: Inrush current limiting and fault protection in 48 V backplane power distribution. IC Role / Device Role: Hot-swap FET controlling power ramp-up and providing overcurrent shutdown. Use Value: 160 A pulsed drain rating and 25 A avalanche current support robust response to short-circuit events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLZ44N | RDS(on) = 0.028 Ω @ 10 V; higher Qg = 60 nC; TO-220 package | Through-hole mounting only; less suitable for high-density SMT designs | Prefer IRLR2905PBF for space-constrained PCBs requiring D-Pak footprint and lower gate drive demand. |
| STP55NF06L | RDS(on) = 0.018 Ω @ 10 V; V(BR)DSS = 60 V; higher ID = 50 A | Larger TO-220FP package; not logic-level (VGS(th) = 1–2.5 V, but higher typical turn-on voltage) | Choose STP55NF06L only when sub-20 mΩ RDS(on) justifies larger package and higher gate charge overhead. |
Compared with IRLZ44N and STP55NF06L, the IRLR2905PBF delivers optimal balance of logic-level drive, D-Pak thermal performance, and 55 V rating-making it preferred for compact, high-efficiency 24–48 V industrial power stages where board area and gate drive simplicity are prioritized.
Availability
IRLR2905PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and hot-swap controllers requiring stable component supply across production lifecycles.
Supply support for IRLR2905PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET innovation.
The IRLR series targets logic-level gate drive applications in industrial and consumer power electronics, emphasizing low RDS(on), fast switching, and ruggedness in surface-mount packages.
FAQ
What is the maximum continuous drain current for IRLR2905PBF at 100°C case temperature?
The maximum continuous drain current is 30 A at TC = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures, with linear derating beginning above 25°C at 0.71 W/°C.
Can IRLR2905PBF be driven directly by a 3.3 V microcontroller GPIO?
Yes-its gate threshold voltage range is 1.0–2.0 V, and RDS(on) remains low (0.040 Ω) at VGS = 4.0 V with ID = 21 A. However, full enhancement and minimal switching losses require ≥4.5 V; a dedicated gate driver is recommended for high-frequency or high-current operation.
Is the body diode of IRLR2905PBF suitable for synchronous rectification?
Yes-the body diode has a forward voltage of 1.3 V at 25 A and reverse recovery time of 80–120 ns, making it usable in low-frequency synchronous rectification. For high-frequency (>500 kHz) or zero-voltage-switching topologies, an external Schottky diode may still be preferred due to lower Qrr (210–320 nC).
What is the recommended PCB footprint and soldering profile for IRLR2905PBF?
The D-Pak footprint should follow IR's AN-994 guidelines: 10 mm² exposed drain pad with thermal vias to inner ground planes. Reflow profile must comply with JEDEC J-STD-020, peak temperature ≤ 260°C for lead-free, with vapor phase or infrared heating preferred over wave soldering for optimal thermal reliability.
IRLR2905PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR2905PBF FAQ
1.How can I place an order for IRLR2905PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR2905PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR2905PBF reliable?
The price and inventory of IRLR2905PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2905PBF is usually 5 days.
3.What payment methods are accepted for IRLR2905PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2905PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR2905PBF?
IRLR2905PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR2905PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR2905PBF?
For technical support, including IRLR2905PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2905PBF requirements.
6.How does Aetrix verify that IRLR2905PBF is sourced from the original manufacturer or authorized distributors?
All IRLR2905PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2905PBF meets industry standards.
7.What is the process for return or replacement of IRLR2905PBF?
All IRLR2905PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2905PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR2905PBF part is unused and in its original packaging.
Return procedure for IRLR2905PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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