Infineon Technologies IRLR2905TRL
- Part No.:
- IRLR2905TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR2905TRL.pdf
- Description:
- MOSFET N-CH 55V 42A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:7,686
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Product details
Overview
IRLR2905TRL from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for 55 V VDS, 42 A continuous drain current at TC = 25°C, and 0.027 Ω RDS(on) at VGS = 10 V. It features ultra-low on-resistance, fast switching, full avalanche rating, and is optimized for DC-DC converters, motor drives, and load-switching applications requiring efficient high-current control.
For engineers reviewing the IRLR2905TRL datasheet, IRLR2905TRL pinout, IRLR2905TRL application, or IRLR2905TRL equivalent, key selection criteria include gate threshold voltage (1.0–2.0 V), junction-to-case thermal resistance (1.4 °C/W), body diode reverse recovery time (80–120 ns), and logic-level compatibility with 5 V microcontroller outputs.
Technical Context
This fifth-generation HEXFET device uses advanced planar processing to minimize RDS(on) per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Qg = 48 nC, Qgd = 25 nC) supports high-frequency PWM operation up to several hundred kHz in synchronous buck topologies.
The integrated body diode exhibits VSD = 1.3 V at IS = 25 A and TJ = 25°C, with trr = 80–120 ns under di/dt = 100 A/µs - critical for minimizing shoot-through losses and EMI in half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; sets upper limit for input rail in buck converters and motor drive H-bridges. |
| RDS(on) @ VGS = 10 V | 0.027 Ω - Conduction loss of 28.4 W at 33 A (I²R), enabling >95% efficiency in 12 V/30 A power stages. |
| ID Continuous @ TC = 25°C | 42 A - Sustained current capability when mounted on 1"² FR-4 PCB; derates linearly above 25°C case temperature. |
| Qg | 48 nC - Total gate charge determines driver strength requirement; ~1.2 A peak needed for 40 ns turn-on with 5 V gate swing. |
| EAS | 210 mJ - Single-pulse avalanche energy rating confirms robustness against inductive switching transients without external snubbers. |
| trr / Qrr | 80–120 ns / 210–320 nC - Body diode recovery behavior directly impacts cross-conduction loss and EMI in synchronous rectification. |
| RθJC | 1.4 °C/W - Junction-to-case thermal resistance enables direct heatsinking via PCB copper pour or clip-mount solutions. |
Pinout & Package
IRLR2905TRL is housed in a TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The package measures 6.73 × 6.35 mm with 1.02 mm height and is compatible with vapor-phase, infrared, and wave soldering processes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate | Control electrode | Logic-level compatible (VGS(th) = 1.0–2.0 V); requires <100 nA leakage current handling in high-impedance bias networks. |
| 2 - Drain | High-side power terminal | Internally connected to exposed metal tab; must be routed to high-current paths and thermally coupled to PCB copper pour or heatsink. |
| 3 - Source | Reference node / return path | Provides low-inductance return for gate drive loop; internal source inductance LS = 7.5 nH affects switching waveform fidelity. |
| 4 - Drain (Tab) | Primary power & thermal interface | Electrically identical to Pin 2; serves as main thermal conduction path (RθJC = 1.4 °C/W) and current-carrying node. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.0 V (RDS(on) = 0.040 Ω), enabling direct interfacing with 3.3 V/5 V MCUs without level-shifting. |
| Ultra-low RDS(on) | 0.027 Ω at 10 V reduces conduction loss by >40% vs. legacy D-Pak MOSFETs, improving thermal margin in compact power modules. |
| Fully avalanche-rated | Guaranteed 210 mJ single-pulse avalanche energy allows reliable operation in inductive load switching without external protection circuits. |
| Fast body diode recovery | trr = 80–120 ns and Qrr = 210–320 nC minimize reverse recovery losses in synchronous rectifiers and bidirectional converters. |
| Surface-mount optimized | TO-252AA footprint supports automated assembly and delivers 110 W power dissipation on 1"² FR-4 PCB - exceeding through-hole alternatives. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: 12 V input to 3.3 V/20 A output in telecom power supply with 500 kHz switching frequency. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch; handles 20 A average current with <100 ns dead-time control. Use Value: 0.027 Ω RDS(on) limits conduction loss to ≤10.8 W, enabling natural convection cooling without heatsink. | Use Scenario: H-bridge driver for 24 V, 15 A brushed motor in industrial actuator with PWM speed control. IC Role / Device Role / Timing Role: Low-side switching element; commutates motor current during direction reversal with body diode freewheeling. Use Value: 210 mJ EAS rating withstands inductive kickback during rapid PWM transitions without failure. |
| Hot-Swap Load Switch | LED Constant-Current Driver |
Use Scenario: Inrush-limited 48 V power distribution module protecting backplane from capacitive loading surges. IC Role / Device Role / Timing Role: Main pass transistor controlled by dedicated hot-swap controller; operates in linear region during soft-start. Use Value: 1.4 °C/W RθJC and 110 W PD rating allow safe linear-mode operation for 50 ms at 10 A/10 V drop. | Use Scenario: 36 V constant-current driver for 10-series white LED string (350 mA, 32 V forward). IC Role / Device Role / Timing Role: PWM-controlled current sink; modulates LED brightness at 1–20 kHz with minimal thermal rise. Use Value: 5 V logic-compatible gate ensures clean 3.3 V MCU PWM edge triggering, reducing gate drive component count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLZ44N | RDS(on) = 0.028 Ω, TO-220 package, higher RθJA (62 °C/W), no official avalanche rating | Requires heatsink for >15 A continuous; unsuitable for space-constrained SMT designs | Prefer IRLR2905TRL where board area, thermal performance, or unclamped inductive robustness are critical. |
| STP55NF06L | RDS(on) = 0.014 Ω, TO-220, VDS = 60 V, Qg = 65 nC, avalanche rated | Lower RDS(on) but higher gate charge increases driver loss; incompatible SMT footprint | Choose STP55NF06L only if lower conduction loss outweighs layout redesign cost and thermal management complexity. |
Compared with IRLZ44N and STP55NF06L, IRLR2905TRL uniquely balances SMT manufacturability, 1.4 °C/W thermal resistance, and guaranteed avalanche ruggedness - making it optimal for high-reliability, high-density power stages where gate drive simplicity and transient immunity are prioritized over marginal RDS(on) reduction.
Availability
IRLR2905TRL is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and LED drivers requiring stable component supply across automotive, industrial, and communications equipment programs.
Supply support for IRLR2905TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.
The IRLR/U series belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space-constrained surface-mount applications where gate drive simplicity and thermal performance are essential.
FAQ
What is the maximum continuous drain current for IRLR2905TRL at 100°C case temperature?
The maximum continuous drain current is 30 A at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures - not package current limitation, which is 20 A under certain conditions.
Does IRLR2905TRL require a gate resistor for stability in switching applications?
Yes - a gate resistor (typically 3.4–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 150 pF) and parasitic inductance. The datasheet specifies switching times using RG = 3.4 Ω; omitting it risks overshoot, shoot-through, and EMI compliance failure in high-speed PWM circuits.
Can IRLR2905TRL be used in linear (analog) mode for hot-swap or inrush limiting?
Yes - its 110 W power dissipation rating at TC = 25°C and 1.4 °C/W junction-to-case thermal resistance support short-duration linear operation. For 50 ms inrush limiting at 10 A and 10 V drop, junction temperature rise remains within safe limits (<100°C) when properly heatsunk to PCB copper.
How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?
The body diode has VSD = 1.3 V at 25 A and trr = 80–120 ns - higher forward drop and slower recovery than typical 45 V Schottky diodes (0.5 V, <10 ns). It is suitable for low-frequency freewheeling but introduces measurable conduction and switching loss versus optimized external diodes in >100 kHz designs.
IRLR2905TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR2905TRL FAQ
1.How can I place an order for IRLR2905TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR2905TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR2905TRL reliable?
The price and inventory of IRLR2905TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2905TRL is usually 5 days.
3.What payment methods are accepted for IRLR2905TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2905TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR2905TRL?
IRLR2905TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR2905TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR2905TRL?
For technical support, including IRLR2905TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2905TRL requirements.
6.How does Aetrix verify that IRLR2905TRL is sourced from the original manufacturer or authorized distributors?
All IRLR2905TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2905TRL meets industry standards.
7.What is the process for return or replacement of IRLR2905TRL?
All IRLR2905TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2905TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR2905TRL part is unused and in its original packaging.
Return procedure for IRLR2905TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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