Infineon Technologies IRLR2905TRLPBF

Overview

IRLR2905TRLPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel Power MOSFET in D-Pak (TO-252AA) package, rated for 55 V V(BR)DSS, 42 A continuous drain current at 25°C, and 0.027 Ω RDS(on) at VGS = 10 V. It features ultra-low on-resistance, fast switching, and full avalanche rating-designed for high-efficiency DC-DC converters, motor control H-bridges, and synchronous rectification in industrial power supplies.

For engineers reviewing the IRLR2905TRLPBF datasheet, IRLR2905TRLPBF pinout, IRLR2905TRLPBF application, or IRLR2905TRLPBF equivalent, key selection criteria include gate threshold voltage (1.0–2.0 V), total gate charge (48 nC), junction-to-case thermal resistance (1.4 °C/W), and body diode reverse recovery performance (trr = 80–120 ns, Qrr = 210–320 nC).

Technical Context

This fifth-generation HEXFET device uses advanced planar processing to minimize RDS(on) per die area while maintaining rugged unclamped inductive switching capability (EAS = 210 mJ). Its logic-level gate drive (VGS(th) ≤ 2.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting.

The integrated body diode exhibits controlled reverse recovery (dv/dt = 5.0 V/ns, Qrr = 210–320 nC), supporting hard-switched topologies. Thermal design is enabled by low RθJC (1.4 °C/W) and defined PCB-mount RθJA (50 °C/W on 1"² FR-4), making it suitable for compact surface-mount power stages.

Key Specifications

Pinout & Package

IRLR2905TRLPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard S-D-G order (Source–Drain–Gate) along the leadframe edge.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLZ44N and STP55NF06L, IRLR2905TRLPBF delivers the best balance of low gate charge (48 nC), tight threshold voltage (1.0–2.0 V), and surface-mount D-Pak thermal performance-making it optimal for compact, high-efficiency, logic-level-driven power stages.

Availability

IRLR2905TRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and embedded DC-DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRLR2905TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRLR2905TRLPBF belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered specifically for high-current, low-voltage switching applications where gate drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum safe operating frequency for IRLR2905TRLPBF in a hard-switched buck converter?

Based on its 48 nC total gate charge and 25 nC Miller charge, the device supports reliable operation up to 500 kHz in well-designed buck converters with ≤3.4 Ω gate drive impedance and adequate PCB layout. Switching losses rise significantly above this frequency due to increased Qgd-related delay and body diode recovery effects.

Can IRLR2905TRLPBF be used in parallel configurations for higher current handling?

Yes-its positive RDS(on) temperature coefficient (0.070 V/°C) ensures inherent current sharing stability. For two devices in parallel, derate total current to ≤75 A with matched gate drive routing and symmetric thermal mounting to avoid thermal runaway.

Does IRLR2905TRLPBF require a gate resistor, and what value is recommended?

A gate resistor is mandatory to control dv/dt and suppress ringing. For 5 V MCU drive, a 10 Ω series resistor is recommended; for 12 V drivers, use 22–33 Ω. Values below 5 Ω risk excessive peak gate current (>2 A), while values above 100 Ω increase switching losses unnecessarily.

How does the body diode performance affect synchronous rectifier design?

The body diode's 80–120 ns trr and 210–320 nC Qrr determine minimum dead-time requirements and reverse-recovery loss contribution. In 200–300 kHz designs, dead-time must exceed 200 ns to prevent shoot-through, and Qrr directly adds ~0.5 W loss per device at 25 A average current.