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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR2905TRR

Name: IRLR2905TRR
Brand: Infineon Technologies
SKU: IRLR2905TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR2905TRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR2905TRR.pdf

Description:: MOSFET N-CH 55V 42A DPAK

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Product details

Overview

IRLR2905TRR from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for 55 V V_DS, 42 A continuous drain current at T_C = 25°C, and 0.027 Ω R_DS(on) at V_GS = 10 V. It features ultra-low on-resistance, fast switching, full avalanche rating, and is optimized for DC-DC converters, motor drives, and load switching in industrial power supplies.

For engineers reviewing the IRLR2905TRR datasheet, IRLR2905TRR pinout, IRLR2905TRR application, or IRLR2905TRR equivalent, key selection criteria include gate threshold voltage (1.0–2.0 V), junction-to-case thermal resistance (1.4 °C/W), body diode reverse recovery time (80–120 ns), and logic-level drive compatibility with 5 V microcontrollers.

Technical Context

This fifth-generation HEXFET uses advanced planar processing to minimize R_DS(on) per die area while maintaining rugged unclamped inductive switching capability. Its gate structure supports low-voltage turn-on (V_GS(th) ≤ 2.0 V) and delivers high transconductance (21 S) at 25 A, enabling efficient operation in synchronous rectification and PWM-controlled power stages.

The integrated body diode exhibits controlled reverse recovery (Q_rr = 210–320 nC, t_rr = 80–120 ns) and low forward voltage (V_SD = 1.3 V at 25 A), making it suitable for freewheeling paths where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; defines usable input range in 24–48 V systems
R_DS(on)	0.027 Ω @ V_GS = 10 V - Contributes ≤ 28 W conduction loss at 42 A; enables compact heatsinking
I_D (continuous)	42 A @ T_C = 25°C - Validated current handling under PCB-mounted thermal conditions
Q_g	48 nC - Gate charge determines driver strength requirement; impacts switching loss at 100–500 kHz
t_rr	80–120 ns - Reverse recovery time sets minimum dead-time in half-bridge topologies
E_AS	210 mJ - Single-pulse avalanche energy rating confirms robustness against inductive kickback
R_θJC	1.4 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting via tab

Pinout & Package

IRLR2905TRR is housed in a TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The package supports vapor-phase, infrared, and wave soldering, and is rated for 110 W power dissipation at T_C = 25°C.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives logic-level gate drive (≥4.0 V) to fully enhance channel; requires <100 nA leakage control
2 (Drain)	Main power output terminal	Connected to high-side switch node or bus rail; electrically tied to exposed metal tab
3 (Source)	Power return reference	Serves as local ground reference for gate drive and current sensing; carries full load current
4 (Drain / Tab)	Thermal & electrical drain path	Exposed copper pad provides primary heat transfer path to PCB copper pour or heatsink

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) = 0.040 Ω), compatible with 3.3 V/5 V MCU GPIOs without level-shifting
Ultra-low R_DS(on)	0.027 Ω at 10 V enables <0.5 W conduction loss at 10 A, reducing thermal footprint in space-constrained designs
Fast switching speed	Turn-on delay 11 ns + rise time 84 ns allows clean transitions up to 500 kHz PWM frequencies
Full avalanche rating	Rated for 210 mJ single-pulse and 11 mJ repetitive avalanche energy, eliminating need for external snubbers in inductive loads
Surface-mount D-Pak	TO-252AA footprint supports automated assembly and offers 1.4 °C/W thermal path to PCB, superior to through-hole alternatives

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V → 5 V/3.3 V point-of-load conversion in industrial PLC modules.

IC Role / Device Role: Synchronous high-side switch with integrated body diode used for freewheeling during low-side conduction.

Use Value: Low R_DS(on) reduces conduction loss by >35% vs. legacy 0.05 Ω MOSFETs; fast t_rr minimizes shoot-through risk in 300 kHz operation.

Use Scenario: H-bridge drive for 24 V, 15 A brushed motors in automated gate actuators.

IC Role / Device Role: Low-side switching element controlling motor direction and PWM speed regulation.

Use Value: Logic-level gate enables direct STM32 GPIO drive; avalanche rating absorbs back-EMF spikes during abrupt stop commands.

Hot-Swap Controller

LED Constant-Current Driver

Use Scenario: Inrush current limiting and fault isolation in redundant 48 V telecom power distribution units.

IC Role / Device Role: Series pass element placed between input bus and downstream load, controlled via current-sense feedback loop.

Use Value: 42 A rating supports 20 A steady-state with margin; low Q_g enables fast response to overcurrent events (<1 µs detection-to-shutdown).

Use Scenario: Dimmable constant-current driver for high-brightness LED arrays in street lighting fixtures.

IC Role / Device Role: Low-side current sink modulated via PWM to regulate average LED current.

Use Value: 0.027 Ω R_DS(on) limits sense resistor power loss; 175°C max T_J ensures reliability in sealed outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44N	R_DS(on) = 0.028 Ω @ 10 V; higher Q_g (71 nC); TO-220 package	Requires heatsink mounting; unsuitable for dense SMT layouts	Select when board-level thermal management permits through-hole assembly and higher gate drive capability is available
STP55NF06L	R_DS(on) = 0.018 Ω @ 10 V; V_DS = 60 V; TO-220FP package	Higher voltage margin but larger footprint and no surface-mount option	Prefer when lower conduction loss justifies added board area and thermal interface complexity

Compared with IRLR2905TRR, IRLZ44N trades SMT compatibility for slightly higher gate charge and through-hole packaging, while STP55NF06L offers lower R_DS(on) but lacks the D-Pak's thermal efficiency and automated assembly support.

Availability

IRLR2905TRR is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, hot-swap controllers, and LED drivers requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for IRLR2905TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

The IRLR/U2905 series belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and load management applications.

FAQ

What is the maximum gate-to-source voltage rating for IRLR2905TRR?

The absolute maximum V_GS is ±16 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤12 V with transient suppression, especially in noisy industrial environments where ringing may cause overshoot beyond 10 V logic levels.

Can IRLR2905TRR be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.070 V/°C) enables inherent current sharing. Successful paralleling requires matched layout symmetry, identical gate drive impedance, and shared source inductance ≤1.5 nH to prevent dynamic imbalance during switching transitions.

Is the TO-252AA package lead-free and RoHS-compliant?

Yes - IRLR2905TRR is manufactured to RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with lead-free matte tin plating on terminals and compliant with IPC/JEDEC J-STD-006 solderability requirements.

Does the body diode support continuous conduction mode (CCM) in synchronous rectifiers?

Yes - the body diode is rated for continuous source current up to 42 A at T_C = 25°C and exhibits low V_SD (1.3 V) and controlled t_rr (80–120 ns), enabling use in CCM buck converters up to 300 kHz without external Schottky replacement.

IRLR2905TRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR2905TRR FAQ

1.How can I place an order for IRLR2905TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR2905TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR2905TRR reliable?

The price and inventory of IRLR2905TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2905TRR is usually 5 days.

3.What payment methods are accepted for IRLR2905TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2905TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR2905TRR?

IRLR2905TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR2905TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR2905TRR?

For technical support, including IRLR2905TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2905TRR requirements.

6.How does Aetrix verify that IRLR2905TRR is sourced from the original manufacturer or authorized distributors?

All IRLR2905TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2905TRR meets industry standards.

7.What is the process for return or replacement of IRLR2905TRR?

All IRLR2905TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2905TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR2905TRR part is unused and in its original packaging.

Return procedure for IRLR2905TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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