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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR2905Z

Name: IRLR2905Z
Brand: Infineon Technologies
SKU: IRLR2905Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR2905Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR2905Z.pdf

Description:: MOSFET N-CH 55V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR2905Z from Infineon Technologies is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, rated for 55V V_DSS, 42A continuous drain current at T_C = 25°C, and 13.5mΩ R_DS(on) at V_GS = 10V. It features 175°C maximum junction temperature, fast switching (t_r = 130ns, t_f = 33ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRLR2905Z datasheet, IRLR2905Z pinout, IRLR2905Z application, or IRLR2905Z equivalent, key selection criteria include its low gate threshold (1.0–3.0V), ultra-low on-resistance per silicon area, robust body diode (V_SD = 1.3V, t_rr = 22–33ns), and thermal performance (R_θJC = 1.38°C/W).

Technical Context

This HEXFET® device uses advanced planar processing to minimize conduction losses while maintaining ruggedness under transient stress. Its logic-level gate drive enables direct interfacing with 3.3V/5V microcontrollers without level-shifting, and its 175°C T_J rating supports operation in thermally constrained environments such as enclosed power modules.

The integrated body diode exhibits low forward voltage (1.3V) and fast recovery (Q_rr = 14–21nC, t_rr = 22–33ns), making it suitable for synchronous rectification and freewheeling in hard-switched topologies. Repetitive avalanche energy (E_AR) is characterized up to T_Jmax, enabling reliable unclamped inductive switching in motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche; defines safe operating range in 48V bus systems.
R_DS(on) @ V_GS = 10V	13.5mΩ max - Determines conduction loss (P_cond ≈ I_D² × R_DS(on)) at full load in high-current paths.
I_D @ T_C = 25°C	42A - Continuous current capability with heatsink; derates to 24A at T_C = 100°C.
V_GS(th)	1.0–3.0V - Ensures full enhancement with 3.3V logic outputs; eliminates need for external gate drivers in many cases.
t_r/t_f	130ns / 33ns - Fast edge rates reduce switching losses and EMI in PWM frequencies up to 500kHz.
E_AS	240mJ - Single-pulse avalanche energy limit; supports robustness against inductive kickback in relay/motor control.
R_θJC	1.38°C/W - Junction-to-case thermal resistance; enables precise heatsink sizing when mounted to PCB copper or metal core.

Pinout & Package

IRLR2905Z is housed in a surface-mount D-Pak (TO-252) package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be soldered to large copper pour or heatsink for thermal and electrical integrity; carries full load current.
Source (Pin 1)	Reference node for gate drive and current return path	Low-inductance connection critical for stable switching; ties to ground plane or low-side switch node.
Gate (Pin 2)	Control electrode for channel formation	High-impedance input requiring <100nC total charge; sensitive to ringing-requires local RC snubber if driven over >10cm trace.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5V-enables direct drive from MCU GPIOs without external level shifters.
Ultra-low R_DS(on)	13.5mΩ at 10V ensures <2.4W conduction loss at 42A-reduces thermal burden in compact 48V power stages.
Repetitive avalanche rated	Characterized for repeated unclamped inductive switching up to T_Jmax-eliminates need for external clamping in brushed motor H-bridges.
Fast body diode	t_rr = 22–33ns and Q_rr = 14–21nC support efficient freewheeling in synchronous buck and half-bridge topologies.
175°C junction rating	Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without derating.

Applications

Brushless DC Motor Control

48V DC-DC Buck Converter

Use Scenario: Half-bridge leg in 3-phase BLDC inverter driving fans or pumps in HVAC systems.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off to minimize shoot-through risk during commutation.

Use Value: 13.5mΩ R_DS(on) and 33ns fall time reduce conduction + switching losses, improving efficiency by >1.2% at 20A load.

Use Scenario: Synchronous rectifier in isolated 48V-to-12V telecom power supply with 300kHz switching frequency.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to cut forward drop from 0.5V to near-zero.

Use Value: Body diode V_SD = 1.3V and Q_rr = 14nC enable clean reverse recovery, reducing output ripple and EMI.

Industrial Solid-State Relay

LED Constant-Current Driver

Use Scenario: High-reliability AC/DC SSR replacing electromechanical relays in programmable logic controllers.

IC Role / Device Role / Timing Role: Main power switch handling 30A resistive loads with zero-crossing control.

Use Value: 240mJ E_AS and 175°C T_J rating ensure survival during inrush and contact bounce events without snubbers.

Use Scenario: Dimmable constant-current switch in high-bay LED luminaires powered from 36–60V DC bus.

IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string current up to 5A.

Use Value: 1.0–3.0V V_GS(th) allows precise analog dimming via DAC-driven gate voltage, achieving <1% current tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N5LF6	R_DS(on) = 7.5mΩ @ 10V, but V_DSS = 60V; higher gate charge (Q_g = 45nC vs. 35nC); DFN5x6 package	Better conduction loss at high current, but requires tighter gate drive layout due to higher Q_g; unsuitable for D-Pak footprint replacement	Select when thermal budget allows smaller package and lower R_DS(on) is prioritized over gate drive simplicity.
IRLZ44NPBF	R_DS(on) = 28mΩ @ 10V; same D-Pak; lower ID (49A @ 25°C) but no rated repetitive avalanche	Lacks avalanche rating-requires external clamping in inductive loads; higher conduction loss increases die temperature by ~12°C at 30A	Acceptable only in non-inductive, low-stress applications like LED switching where avalanche immunity is not required.

Compared with STL100N5LF6 and IRLZ44NPBF, IRLR2905Z delivers optimal balance of low R_DS(on), logic-level drive, avalanche ruggedness, and D-Pak compatibility-making it preferred for cost-sensitive, thermally constrained, and inductive-load designs.

Availability

IRLR2905Z is available at Aetrix Electronics and suitable for industrial motor control, 48V DC-DC conversion, and solid-state relay applications requiring stable component supply across multi-year production cycles.

Supply support for IRLR2905Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power switching in demanding industrial, computing, and renewable energy systems-emphasizing low R_DS(on), fast switching, and ruggedness under transient stress.

FAQ

What is the maximum continuous drain current for IRLR2905Z at 100°C case temperature?

The IRLR2905Z supports 24A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be validated with actual board-level thermal design using R_θJA = 40°C/W (PCB mount) or R_θJC = 1.38°C/W with heatsink.

Does IRLR2905Z require a gate resistor for stability in 100kHz PWM applications?

Yes-a gate resistor of 10–22Ω is recommended to dampen gate-source ringing caused by L_S (7.5nH) and L_D (4.5nH) parasitics. Without it, overshoot exceeding ±20V can trigger spurious turn-on or oscillation, especially when driven by high-speed MCUs with fast edge rates.

Can IRLR2905Z replace IRLR2905 in existing designs?

Yes-IRLR2905Z is the lead-free (PbF) version of IRLR2905, with identical electrical specifications, pinout, and thermal performance. The "Z" suffix denotes RoHS-compliant packaging; no layout or firmware changes are needed for drop-in replacement in new production.

Is the body diode in IRLR2905Z suitable for synchronous rectification in a 300kHz buck converter?

Yes-the body diode has t_rr = 22–33ns and Q_rr = 14–21nC, enabling clean reverse recovery at 300kHz. However, for optimal efficiency, use gate timing that ensures the MOSFET turns on before the diode fully recovers to avoid overlap conduction loss.

IRLR2905Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR2905Z FAQ

1.How can I place an order for IRLR2905Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR2905Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR2905Z reliable?

The price and inventory of IRLR2905Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2905Z is usually 5 days.

3.What payment methods are accepted for IRLR2905Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2905Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR2905Z?

IRLR2905Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR2905Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR2905Z?

For technical support, including IRLR2905Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2905Z requirements.

6.How does Aetrix verify that IRLR2905Z is sourced from the original manufacturer or authorized distributors?

All IRLR2905Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2905Z meets industry standards.

7.What is the process for return or replacement of IRLR2905Z?

All IRLR2905Z units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2905Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR2905Z part is unused and in its original packaging.

Return procedure for IRLR2905Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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