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Infineon Technologies IRLR2905ZPBF
- Part No.:
- IRLR2905ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR2905ZPBF.pdf
- Description:
- MOSFET N-CH 55V 42A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,022
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Product details
Overview
IRLR2905ZPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, rated for 55 V VDSS, 42 A continuous drain current at TC = 25°C, and 13.5 mΩ RDS(on) at VGS = 10 V. It features 175°C maximum junction temperature, fast switching (tr = 130 ns, tf = 33 ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters, motor control H-bridges, and industrial power supplies.
For engineers reviewing the IRLR2905ZPBF datasheet, IRLR2905ZPBF pinout, IRLR2905ZPBF application, or IRLR2905ZPBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–3.0 V), low RDS(on) at 4.5 V (22.5 mΩ max), body diode reverse recovery charge (Qrr = 14–21 nC), and thermal performance (RθJC = 1.38 °C/W).
Technical Context
This HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining robust avalanche energy handling (EAS = 240 mJ, tested). Its gate threshold voltage range (1.0–3.0 V) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs without level-shifting.
The integrated body diode supports synchronous rectification and freewheeling in buck converters and half-bridge topologies. Thermal design is enabled by low junction-to-case resistance (1.38 °C/W) and validated transient thermal impedance curves up to 100 ms pulse duration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche; suitable for 48 V nominal bus systems with margin. |
| RDS(on) @ VGS = 10 V | 13.5 mΩ max - Enables <1.8 W conduction loss at 42 A, critical for thermally constrained PCB layouts. |
| RDS(on) @ VGS = 4.5 V | 22.5 mΩ max - Confirmed logic-level operation with standard 3.3 V/5 V GPIOs; avoids external gate drivers. |
| Qg | 35 nC max - Determines gate drive power requirement; enables efficient PWM switching up to ~500 kHz with moderate gate resistance. |
| EAS (tested) | 240 mJ - Validated single-pulse unclamped inductive switching capability; supports robust overcurrent protection in motor drives. |
| TJ max | 175°C - Allows sustained operation in high-ambient environments (e.g., enclosed industrial enclosures) without derating below 100°C case temp. |
| Qrr | 21 nC max - Low reverse recovery charge reduces switching losses and EMI in hard-switched topologies using body diode commutation. |
Pinout & Package
IRLR2905ZPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package provides low-profile mounting and high-current capability via copper-clad PCB land pattern.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal (connected to internal die substrate) | Electrically and thermally tied to exposed metal tab; must be soldered to large copper pour for thermal management. |
| Source (S) | Reference node for gate drive and current return path | Connected to source metallization; forms common reference for gate-source voltage and body diode cathode. |
| Gate (G) | Control electrode for channel formation | High-impedance input requiring low-charge drive; sensitive to ESD; routed away from noisy power traces. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 3.0 V ensures full enhancement with 3.3 V MCU I/O, eliminating need for gate driver ICs in low-power control stages. |
| Ultra-low RDS(on) | 13.5 mΩ at 10 V enables >96% efficiency in 12–48 V buck converters delivering 20–40 A, reducing heatsink requirements. |
| Repetitive avalanche rating | Rated for repeated unclamped inductive switching up to TJmax; validated per AN-1005, enabling ruggedized motor phase-leg designs. |
| 175°C junction rating | Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood auxiliary supplies) without forced air cooling. |
| Low Qrr body diode | 21 nC Qrr minimizes voltage overshoot and ringing during freewheeling, easing EMI filter design in Class-D audio and SMPS. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V battery to 12 V for vehicle infotainment and ADAS modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250–500 kHz PWM frequency with 4.5 V gate drive. Use Value: 13.5 mΩ RDS(on) limits conduction loss to <2.4 W at 42 A, enabling compact layout without heatsink in ambient ≤70°C. |
Use Scenario: Half-bridge H-bridge for bidirectional control of 24 V, 30 A brushed motors in industrial actuators. IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (tf = 33 ns) to minimize shoot-through risk during direction reversal. Use Value: 22.5 mΩ RDS(on) at 4.5 V ensures full enhancement from microcontroller GPIO, simplifying gate drive circuitry. |
| Industrial Power Supply | LED Constant-Current Driver |
Use Scenario: Primary-side switch in 500 W AC-DC front-end with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: Fast-switching MOSFET in totem-pole PFC bridge leg, handling 30 A peak currents at 100 kHz. Use Value: 35 nC Qg and 130 ns tr support high-frequency operation while limiting gate drive losses to <0.5 W at 100 kHz. |
Use Scenario: High-current dimming switch for 48 V, 35 A LED arrays in horticultural lighting fixtures. IC Role / Device Role / Timing Role: PWM-controlled current sink with body diode conducting freewheeling current during off-time. Use Value: 21 nC Qrr and 1.3 V VSD reduce diode conduction loss and switching noise, improving EMI compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | RDS(on) = 14 mΩ @ 10 V; higher Qg = 55 nC; TO-220 package (not surface-mount) | Larger footprint and higher thermal resistance (RθJA ≈ 62 °C/W vs. 40 °C/W for IRLR2905ZPBF) | Preferred only when through-hole assembly or higher single-pulse avalanche energy (EAS = 370 mJ) is required. |
| IRLZ44NPBF | Lower VDSS = 55 V same, but RDS(on) = 28 mΩ @ 10 V; lower ID = 49 A; same D-Pak package | Higher conduction loss at high current; less suitable for 40+ A continuous loads | Better cost/performance fit for ≤25 A applications where gate charge (Qg = 25 nC) and footprint match are prioritized over RDS(on). |
Compared with STP55NF06L and IRLZ44NPBF, IRLR2905ZPBF delivers the lowest RDS(on) in D-Pak form factor, enabling higher current density and better thermal performance in space-constrained SMT designs-especially critical for multi-phase converters and compact motor drivers.
Availability
IRLR2905ZPBF is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, and LED constant-current drivers requiring stable component supply across multi-year production cycles.
Supply support for IRLR2905ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to develop, manufacture, and support the HEXFET® Power MOSFET portfolio with focus on high-efficiency power conversion.
The IRLR2905ZPBF belongs to the logic-level HEXFET® family, engineered specifically for direct microcontroller interface in high-current, medium-voltage switching applications-emphasizing low gate charge, rugged avalanche behavior, and thermal reliability.
FAQ
Is IRLR2905ZPBF RoHS-compliant and lead-free?
Yes. IRLR2905ZPBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU, with Pb-free plating on all terminals and halogen-free molding compound. The "PbF" suffix explicitly denotes lead-free packaging, verified in Infineon's material declarations and certificate of compliance.
What is the maximum safe continuous drain current at 100°C case temperature?
At TC = 100°C, the continuous drain current is derated to 24 A (per Absolute Maximum Ratings table), based on thermal limits of the D-Pak package-not silicon current capability. This value assumes proper PCB copper area (≥10 cm² 2 oz Cu) and still-air conditions.
Can IRLR2905ZPBF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (see Fig. 10) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical layout, and shared source inductance minimization; typical designs use 2–4 devices for >100 A applications.
Does the body diode support continuous conduction mode (CCM) in synchronous rectification?
Yes. The integral body diode has VSD = 1.3 V max at 36 A and trr = 22–33 ns, making it suitable for CCM operation in buck converters up to ~300 kHz. However, external Schottky or MOSFET synchronous rectifiers are recommended for highest efficiency above 10 A.
IRLR2905ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1570 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR2905ZPBF FAQ
1.How can I place an order for IRLR2905ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR2905ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR2905ZPBF reliable?
The price and inventory of IRLR2905ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2905ZPBF is usually 5 days.
3.What payment methods are accepted for IRLR2905ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2905ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR2905ZPBF?
IRLR2905ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR2905ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR2905ZPBF?
For technical support, including IRLR2905ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2905ZPBF requirements.
6.How does Aetrix verify that IRLR2905ZPBF is sourced from the original manufacturer or authorized distributors?
All IRLR2905ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2905ZPBF meets industry standards.
7.What is the process for return or replacement of IRLR2905ZPBF?
All IRLR2905ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2905ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR2905ZPBF part is unused and in its original packaging.
Return procedure for IRLR2905ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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