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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR2908PBF

Name: IRLR2908PBF
Brand: Infineon Technologies
SKU: IRLR2908PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR2908PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR2908PBF.pdf

Description:: MOSFET N-CH 80V 30A DPAK

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Product details

Overview

IRLR2908PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak package, designed for high-efficiency DC-DC conversion and motor control switching. It delivers 30A continuous drain current at V_GS = 10V, 28 mΩ R_DS(on) at 25°C, 80V V_DSS, and supports 175°C junction operation - enabling robust performance in automotive body electronics and industrial power supplies.

For engineers reviewing the IRLR2908PBF datasheet, IRLR2908PBF pinout, IRLR2908PBF application, or IRLR2908PBF equivalent, key selection criteria include its low gate charge (22 nC typ), fast switching (t_r = 95 ns), repetitive avalanche rating, and surface-mount D-Pak thermal performance with R_θJC = 1.3°C/W.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining ruggedness against unclamped inductive switching. Its 22.5–28 mΩ R_DS(on) range reflects process variation under 10V drive, and the 175°C T_J rating enables operation in thermally constrained environments without derating below 100°C case temperature.

The device integrates a low-loss intrinsic body diode (V_SD = 1.3 V max, t_rr = 75–110 ns), supports 4.5V logic-level gate drive, and features 35 S forward transconductance - ensuring stable turn-on across temperature and load conditions in synchronous rectification and H-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Withstands up to 80 V drain-source voltage before breakdown, suitable for 48 V nominal bus systems with transient margin.
R_DS(on)	28 mΩ max @ 25°C, V_GS = 10 V - Limits conduction loss to ≤0.25 W at 30 A, critical for thermal management in compact PCB layouts.
I_D (continuous)	30 A @ T_C = 25°C - Supports high-current loads such as BLDC motor phases or solenoid drivers without external heatsinking.
Q_g	22 nC typ - Enables efficient 100 kHz+ switching with moderate gate driver strength (e.g., TC4427), reducing switching loss.
t_r/t_f	95 ns / 55 ns - Fast edge rates minimize overlap loss in hard-switched converters and reduce EMI filter burden.
E_AS	180 mJ single-pulse - Allows safe energy absorption during inductive turn-off events (e.g., relay or motor coil de-energization).
R_θJC	1.3 °C/W - Enables direct thermal coupling to copper pour or heatsink, supporting >1.5 W power dissipation in standard D-Pak mounting.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; optimized for vapor-phase and infrared reflow.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Connected to large copper area for heat sinking and low-inductance high-current routing; electrically tied to backside metal tab.
Source (S)	Reference node for gate drive and current return	Serves as common reference for gate control and load current return; low-inductance layout essential for stable switching.
Gate (G)	Control input for channel conduction	High-impedance MOS gate requiring <22 nC charge; sensitive to ESD and ringing - needs local RC snubber or gate resistor ≥10 Ω.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	22.5 mΩ typical at 10 V gate drive - reduces I²R losses by >30% vs. legacy 40 mΩ D-Pak MOSFETs in 24–48 V systems.
175°C maximum junction temperature	Enables operation in under-hood automotive modules or sealed industrial enclosures without forced air cooling.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external clamping diodes in relay drivers.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - compatible with standard reflow profiles and no pre-bake required.
Low gate-to-drain charge (Q_gd)	11–17 nC - minimizes Miller effect, improving noise immunity and enabling stable operation with high dv/dt (>10 V/ns).

Applications

Automotive Body Control Module (BCM)

Industrial DC Motor Driver

Use Scenario: Switching 12 V/24 V loads including door locks, window lifts, and HVAC actuators in vehicle BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling inductive loads with integrated flyback energy handling.

Use Value: Repetitive avalanche capability eliminates external TVS/clamp diodes; 175°C rating ensures reliability in engine bay proximity.

Use Scenario: Driving brushed DC motors in factory automation conveyors and robotic joints.

IC Role / Device Role / Timing Role: Low-side PWM switch in half-bridge configuration with freewheeling through internal body diode.

Use Value: 28 mΩ R_DS(on) limits resistive heating at 20–30 A peak; fast t_r/t_f supports 20–50 kHz PWM without excessive switching loss.

Server PSU OR-ing FET

LED Constant-Current Driver

Use Scenario: Hot-swap and redundancy control in 48 V server power distribution units.

IC Role / Device Role / Timing Role: OR-ing MOSFET in ideal diode configuration, replacing Schottky diodes to reduce forward drop.

Use Value: 22.5 mΩ typical R_DS(on) cuts conduction loss by >70% vs. 0.4 V Schottky, improving efficiency and thermal density.

Use Scenario: High-current LED string switching in architectural and horticultural lighting systems.

IC Role / Device Role / Timing Role: Primary current-switching element in buck or boost LED driver topologies.

Use Value: 30 A continuous rating supports >100 W LED arrays; low Q_g enables precise dimming control at high PWM frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DSS, 30 mΩ R_DS(on), TO-220 package, higher R_θJA (62°C/W)	Higher voltage margin but larger footprint and inferior thermal resistance - requires heatsink for >10 W dissipation.	Choose when 200 V rating is mandatory and board space allows through-hole mounting.
IRFZ44NPBF	55 V V_DSS, 28 mΩ R_DS(on), TO-220, 49 A I_D, no repetitive avalanche rating	Lacks avalanche ruggedness and 175°C rating - unsuitable for inductive switching without external protection.	Select only for low-voltage, non-inductive loads where cost is primary and thermal headroom is ample.

Compared with STP30NF20 and IRFZ44NPBF, IRLR2908PBF offers superior thermal performance in surface-mount form, guaranteed repetitive avalanche capability, and optimal balance of voltage rating, on-resistance, and gate drive compatibility for 48 V-class systems.

Availability

IRLR2908PBF is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, server power OR-ing, and LED driver designs requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IRLR2908PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive microcontrollers, and sensor solutions, with core expertise in silicon and wide-bandgap device innovation.

The IRLR2908PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in automotive and industrial power systems where thermal robustness and avalanche tolerance are critical.

FAQ

Is IRLR2908PBF suitable for 4.5 V gate drive?

Yes - the device is specified for full enhancement at V_GS = 4.5 V, delivering 25 A minimum drain current and 30 mΩ max R_DS(on). Its 1.0–2.5 V gate threshold ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers, making it appropriate for microcontroller-driven low-side switches.

What is the maximum allowable pulsed drain current (I_DM)?

The absolute maximum pulsed drain current is 150 A, limited by package and silicon thermal constraints. This rating applies for pulse widths ≤100 µs and duty cycle ≤1%, as defined in Figure 8 (SOA chart). Exceeding these conditions risks bond wire fusing or thermal runaway.

Does IRLR2908PBF require a gate resistor for stability?

Yes - a series gate resistor (typically 10–47 Ω) is recommended to dampen parasitic oscillation caused by gate loop inductance and Miller capacitance. Without it, ringing can exceed V_GS absolute maximum (±16 V) and cause erratic switching or gate oxide damage.

Can the internal body diode be used for freewheeling in a buck converter?

Yes - the integrated body diode has 1.3 V forward voltage and 75–110 ns reverse recovery time, enabling use in non-synchronous buck topologies. However, for >100 kHz operation or high efficiency, external Schottky or synchronous FET replacement is advised due to diode conduction loss and recovery charge (Q_rr = 210–310 nC).

IRLR2908PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1890 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 120W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR2908PBF FAQ

1.How can I place an order for IRLR2908PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR2908PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR2908PBF reliable?

The price and inventory of IRLR2908PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2908PBF is usually 5 days.

3.What payment methods are accepted for IRLR2908PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2908PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR2908PBF?

IRLR2908PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR2908PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR2908PBF?

For technical support, including IRLR2908PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2908PBF requirements.

6.How does Aetrix verify that IRLR2908PBF is sourced from the original manufacturer or authorized distributors?

All IRLR2908PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2908PBF meets industry standards.

7.What is the process for return or replacement of IRLR2908PBF?

All IRLR2908PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2908PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR2908PBF part is unused and in its original packaging.

Return procedure for IRLR2908PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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