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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR2908TRPBF

Name: IRLR2908TRPBF
Brand: Infineon Technologies
SKU: IRLR2908TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR2908TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR2908TRPBF.pdf

Description:: MOSFET N-CH 80V 30A DPAK

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Product details

Overview

IRLR2908TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 80 V V_DSS, 30 A continuous drain current at T_C = 25°C, and 28 mΩ R_DS(on) at V_GS = 10 V. It features 175°C maximum junction temperature, fast switching (t_r = 95 ns, t_f = 55 ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters, motor drives, and industrial power switches.

For engineers reviewing the IRLR2908TRPBF datasheet, IRLR2908TRPBF pinout, IRLR2908TRPBF application, or IRLR2908TRPBF equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, body diode recovery performance (t_rr = 75–110 ns, Q_rr = 210–310 nC), thermal resistance (R_θJC = 1.3°C/W), and D-Pak surface-mount compatibility with vapor-phase and IR reflow.

Technical Context

This MOSFET employs advanced HEXFET® silicon processing to minimize conduction loss while maintaining robust unclamped inductive switching integrity. Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) enables logic-level drive compatibility, and the 33 nC total gate charge supports efficient PWM control at frequencies up to several hundred kHz.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3 V at I_S = 23 A) and controlled reverse recovery behavior-critical for synchronous rectification and flyback snubberless topologies. Thermal design is facilitated by low junction-to-case resistance and validated 175°C operation under pulsed and steady-state conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck, half-bridge, and motor phase applications.
R_DS(on) @ V_GS=10 V	28 mΩ max - Conduction loss of ≤2.5 W at 30 A DC; enables compact thermal design in high-current 12–48 V systems.
I_D @ T_C=25°C	30 A - Continuous current rating with heatsink; defines PCB copper area and thermal pad requirements for surface-mount layout.
Q_g	33 nC max - Total gate charge determines driver strength needed; compatible with standard 1-A peak gate drivers at ≤500 kHz switching.
t_r/t_f	95/55 ns - Fast edge rates reduce switching loss; supports high-frequency operation without excessive EMI filtering overhead.
E_AS	180 mJ - Single-pulse avalanche energy rating; allows safe operation during inductive turn-off transients without external clamping.
R_θJC	1.3°C/W - Junction-to-case thermal resistance enables direct thermal coupling to heatsink or metal-core PCB for >1.5 W continuous dissipation.

Pinout & Package

IRLR2908TRPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in a single-row configuration optimized for automated placement and reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Connected to large copper pour or heatsink; carries full load current and must be routed with low-inductance geometry.
Source (S)	Reference node for gate drive and current sensing	Common return path for load current and gate driver ground; critical for stable switching and accurate current monitoring.
Gate (G)	Control terminal for channel conduction	High-impedance input requiring low-ESR gate resistor (typically 5–22 Ω) to damp ringing and control dv/dt.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	30 mΩ typical - Enables direct interface with 3.3 V/5 V microcontrollers and logic-level drivers without level-shifting.
Repetitive avalanche rated	Up to T_jmax = 175°C - Eliminates need for external avalanche clamps in inductive load switching (e.g., solenoid, relay, BLDC phase).
Low Q_gd/Q_gs ratio	11/6 nC - Reduces Miller effect, improving noise immunity and enabling stable hard-switching above 200 kHz.
Enhanced diode recovery	Q_rr = 210–310 nC, t_rr = 75–110 ns - Minimizes reverse recovery loss in synchronous rectifiers and freewheeling paths.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - Supports standard Pb-free reflow profiles without baking or special handling.

Applications

Brushless DC Motor Phase Switch

Industrial DC-DC Converter Primary Switch

Use Scenario: High-side and low-side switching in 24–48 V BLDC inverters driving fans, pumps, or compressors.

IC Role / Device Role / Timing Role: Power switch in 3-phase bridge; handles 20–30 A peak phase current with <100 ns dead-time control.

Use Value: Low R_DS(on) reduces conduction loss by >30% vs. legacy 40 mΩ MOSFETs; fast switching enables 20–50 kHz PWM without excessive core loss.

Use Scenario: Primary-side switch in isolated 12 V → 3.3 V/5 V flyback or forward converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 250–500 kHz; subjected to 64 V reflected voltage and 23 A peak current.

Use Value: Rated 80 V V_DSS provides 25% margin over 64 V clamp; avalanche rating absorbs leakage inductance spikes without snubber.

Automotive HVAC Blower Driver

Server PSU OR-ing FET

Use Scenario: PWM-controlled blower motor in 12 V automotive HVAC systems with reverse battery and load dump protection.

IC Role / Device Role / Timing Role: Low-side switch controlling motor speed; exposed to 40 V transients and 100 A surge currents.

Use Value: 175°C T_jmax and 150 A pulsed rating support transient overload survival; low gate charge enables fast fault shutdown.

Use Scenario: Hot-swap and redundancy control in 12 V server backplane power distribution with dual PSUs.

IC Role / Device Role / Timing Role: OR-ing FET placed between PSU output and common bus; conducts up to 30 A with minimal voltage drop.

Use Value: 28 mΩ R_DS(on) limits conduction loss to <26 mV at 30 A, reducing heat generation and improving system efficiency by 0.8%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	80 V V_DSS, 55 A I_D, 8 mΩ R_DS(on), TO-220 package	Higher current rating but through-hole mounting; higher thermal mass slows transient response	Preferred where board space permits and heatsinking is via chassis mount rather than PCB copper.
IRFZ44NPBF	55 V V_DSS, 49 A I_D, 28 mΩ R_DS(on), TO-220 package	Lower voltage rating limits use to ≤36 V systems; no avalanche rating specified	Suitable only for non-avalanche-critical 12–24 V applications with conservative voltage derating.

Compared with STP80NF55-08 and IRFZ44NPBF, IRLR2908TRPBF offers superior surface-mount integration, guaranteed repetitive avalanche capability, and tighter V_GS(th) distribution-making it optimal for space-constrained, high-reliability 48 V industrial and automotive power stages.

Availability

IRLR2908TRPBF is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, automotive HVAC blowers, and server OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for IRLR2908TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap device physics and manufacturing.

This part belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial motor control, power supplies, and transportation systems where thermal robustness and avalanche tolerance are critical.

FAQ

Is IRLR2908TRPBF suitable for 4.5 V gate drive in battery-powered applications?

Yes. With V_GS(th) ranging from 1.0 V to 2.5 V and R_DS(on) = 30 mΩ typical at V_GS = 4.5 V, it delivers low conduction loss in 3.3 V–5 V logic-driven systems such as portable tools and 12 V battery-powered motor controllers. Gate charge remains manageable (<25 nC at 4.5 V), supporting efficient low-voltage driver ICs.

What is the maximum continuous current at 100°C case temperature?

Per the datasheet, continuous drain current drops to 17 A at T_C = 100°C (V_GS = 10 V). This reflects thermal derating due to reduced channel mobility and increased R_DS(on); actual usable current depends on PCB copper area, airflow, and heatsink attachment-designers should verify junction temperature using R_θJC = 1.3°C/W and ambient conditions.

Does IRLR2908TRPBF have a qualified AEC-Q101 rating for automotive use?

No. While widely used in automotive HVAC and lighting, IRLR2908TRPBF is not AEC-Q101 qualified. For automotive-grade applications requiring qualification, Infineon's AUIRLR2908 or AUIRF3205 are direct replacements with identical electrical specs and full AEC-Q101 compliance, including extended temperature and reliability testing.

Can this MOSFET replace IRLU2908PbF in existing designs?

Yes-IRLR2908TRPBF and IRLU2908PbF share identical silicon die and electrical specifications; the difference is package only (D-Pak vs. I-Pak). Layout changes are required: D-Pak has wider lead spacing and larger thermal pad. Thermal performance improves slightly (R_θJA ≈ 40°C/W vs. 110°C/W for I-Pak), but gate drive and circuit operation remain functionally identical.

IRLR2908TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1890 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 120W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR2908TRPBF FAQ

1.How can I place an order for IRLR2908TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR2908TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR2908TRPBF reliable?

The price and inventory of IRLR2908TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR2908TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR2908TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR2908TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR2908TRPBF?

IRLR2908TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR2908TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR2908TRPBF?

For technical support, including IRLR2908TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR2908TRPBF requirements.

6.How does Aetrix verify that IRLR2908TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR2908TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR2908TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR2908TRPBF?

All IRLR2908TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR2908TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR2908TRPBF part is unused and in its original packaging.

Return procedure for IRLR2908TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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