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Infineon Technologies IRLR3103TRL
- Part No.:
- IRLR3103TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR3103TRL.pdf
- Description:
- MOSFET N-CH 30V 55A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,214
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Product details
Overview
IRLR3103TRL from Infineon (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D-PAK (TO-252AA) package, designed for high-efficiency DC-DC conversion and load switching. It delivers 55 A continuous drain current at 25°C, 30 V VDSS, and ultra-low 19 mΩ RDS(on) at VGS = 10 V - enabling high-current, low-loss operation in synchronous buck converters and motor drive half-bridges.
For engineers reviewing the IRLR3103TRL datasheet, IRLR3103TRL pinout, IRLR3103TRL application, or IRLR3103TRL equivalent, key selection criteria include its 4.5 V gate threshold, 50 nC total gate charge, fully avalanche-rated construction, and surface-mount D-PAK thermal performance with 1.4 °C/W junction-to-case resistance.
Technical Context
This HEXFET device uses fifth-generation silicon process technology to minimize conduction loss while maintaining fast switching (tr = 210 ns, tf = 54 ns) and robust unclamped inductive switching capability (EAS = 240 mJ). Its logic-level gate enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.
The integrated body diode exhibits 1.3 V forward voltage at 28 A and 81–120 ns reverse recovery time (trr), supporting moderate-frequency freewheeling in hard-switched topologies. Thermal design leverages low RθJC (1.4 °C/W) and supports up to 107 W power dissipation at TC = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in off-state; suitable for 24 V nominal bus systems with margin. |
| RDS(on) @ VGS = 10 V | 0.019 Ω - Enables ≤1.0 W conduction loss at 7.3 A RMS; critical for thermally constrained PCB layouts. |
| ID @ TC = 25°C | 55 A - Continuous current rating under ideal heatsinking; defines maximum steady-state load capacity. |
| Qg | 50 nC - Total gate charge determines driver strength requirement; impacts switching loss at 100–500 kHz. |
| EAS | 240 mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive turn-off transients. |
| VGS(th) | 1.0 V (min) - Logic-level threshold ensures full enhancement with 3.3 V GPIO; eliminates need for gate boosters. |
| tr/tf | 210 / 54 ns - Fast edge rates reduce transition losses but require careful layout to suppress EMI. |
Pinout & Package
IRLR3103TRL is housed in a surface-mount D-PAK (TO-252AA) package with exposed drain pad for thermal conduction. The package features gull-wing leads compatible with vapor-phase and infrared reflow soldering per IPC-J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or low-side switch node; carries full load current. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate; requires <100 nC charge for full enhancement; sensitive to ESD. |
| Pin 3 (Drain) | Power output (D) | Internally connected to exposed copper pad; primary heat path to PCB; must be routed with wide copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - enables direct interface with 3.3 V/5 V MCUs and PWM controllers. |
| Fully avalanche rated | Guaranteed single-pulse avalanche energy of 240 mJ - eliminates external snubbers in inductive load switching. |
| Ultra-low RDS(on) | 19 mΩ @ 10 V - reduces conduction loss by >30% vs. comparable 30 V MOSFETs, improving efficiency in high-current rails. |
| Surface-mount D-PAK | Thermal resistance RθJC = 1.4 °C/W - allows >100 W power handling with minimal heatsink when mounted on 1"² FR-4 PCB. |
| Lead-free (PbF) | RoHS-compliant construction with matte tin plating - meets IPC-1601 and JEDEC J-STD-020 reflow requirements. |
Applications
| DC-DC Synchronous Buck Converter | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-efficiency 12 V → 3.3 V/5 V point-of-load regulation in infotainment head units. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal margin. Use Value: Achieves >94% efficiency at 20 A load due to 19 mΩ RDS(on), reducing board temperature rise by 12°C vs. diode solution. | Use Scenario: Load switching for interior lighting, window lift motors, and seat actuators in 12 V vehicle architecture. IC Role / Device Role: High-current N-channel power switch controlled by automotive MCU GPIO or LIN transceiver output. Use Value: Withstands 175°C junction temperature and 240 mJ avalanche energy - eliminates fuse dependency during motor stall events. |
| Industrial PLC Output Stage | Server VRM High-Current Phase |
Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules driving solenoids and contactors. IC Role / Device Role: Protected high-side or low-side switch with integrated overtemperature and short-circuit detection via external circuitry. Use Value: 55 A continuous rating and 220 A pulsed capability support 30 A industrial loads with 2× safety margin and no derating at 70°C ambient. | Use Scenario: Lower FET in multiphase buck converter supplying CPU/GPU core voltage (0.8–1.2 V @ 100+ A). IC Role / Device Role: High-conductivity, low-Qg MOSFET optimized for high-frequency (500 kHz–1 MHz), high-duty-cycle operation. Use Value: 50 nC Qg and 210 ns tr enable efficient switching at 1 MHz, while 1.4 °C/W RθJC sustains 107 W dissipation with minimal thermal interface resistance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3103PBF | Same die, through-hole TO-220AB package; RθJA = 62 °C/W (vs. 50 °C/W for D-PAK); no exposed drain pad. | Requires heatsink mounting; unsuitable for dense, double-sided SMT boards. | Select when mechanical mounting stability or legacy through-hole assembly is required. |
| STP30NF3LL | 30 V, 30 A, RDS(on) = 0.022 Ω @ 10 V; Qg = 45 nC; lower current rating and higher on-resistance. | Limited to ≤30 A continuous loads; less suitable for high-current VRM phases or BCM motor drives. | Select when cost sensitivity outweighs current density needs and thermal constraints permit. |
Compared with IRL3103TRL, IRL3103PBF trades surface-mount flexibility for easier heatsinking, while STP30NF3LL offers lower gate charge but sacrifices 45% continuous current capacity and thermal efficiency in high-power applications.
Availability
IRLR3103TRL is available at Aetrix Electronics and suitable for DC-DC converters, automotive body control modules, industrial PLC outputs, and server VRM phases requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for IRLR3103TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to Infineon's legacy HEXFET® Power MOSFET product line - engineered for high-current, low-voltage switching in automotive, industrial, and computing power systems where reliability under repetitive stress and thermal cycling is critical.
FAQ
Is IRLR3103TRL suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage (VGS(th)) as low as 1.0 V and full enhancement achievable at VGS = 4.5 V, the IRLR3103TRL is explicitly designed as a logic-level MOSFET. It delivers RDS(on) = 24 mΩ at VGS = 4.5 V and ID = 25 A, making it compatible with standard 3.3 V GPIO outputs without external level-shifting circuitry.
What is the maximum PCB copper area needed to sustain 55 A continuous current?
To sustain 55 A continuously at TC = 25°C, the D-PAK package requires ≥1"² (6.45 cm²) of 2-oz copper on the drain pad layer, per IR application note AN-994. Thermal vias (≥12 × 12 mil) beneath the pad into inner ground/power planes are recommended to maintain junction temperature below 150°C at 40°C ambient.
Does IRLR3103TRL include integrated ESD protection on the gate?
No. Like most discrete power MOSFETs, the IRLR3103TRL has no built-in gate ESD protection diodes. Its gate oxide is rated for ±16 V absolute maximum VGS, and exposure to >±2 kV HBM can cause latent damage. External gate resistors (10–100 Ω) and TVS diodes are strongly recommended in production designs per JEDEC JS-001 standards.
Can IRLR3103TRL replace IRLU3103 in a through-hole design?
No - IRLR3103TRL is surface-mount D-PAK (TO-252AA), while IRLU3103 is through-hole I-PAK (TO-251AA). Though electrically identical, their footprints, thermal paths, and assembly processes differ fundamentally. Direct replacement would require PCB redesign, stencil changes, and requalification of thermal performance and mechanical reliability.
IRLR3103TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR3103TRL FAQ
1.How can I place an order for IRLR3103TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR3103TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR3103TRL reliable?
The price and inventory of IRLR3103TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3103TRL is usually 5 days.
3.What payment methods are accepted for IRLR3103TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3103TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR3103TRL?
IRLR3103TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR3103TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR3103TRL?
For technical support, including IRLR3103TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3103TRL requirements.
6.How does Aetrix verify that IRLR3103TRL is sourced from the original manufacturer or authorized distributors?
All IRLR3103TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3103TRL meets industry standards.
7.What is the process for return or replacement of IRLR3103TRL?
All IRLR3103TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3103TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR3103TRL part is unused and in its original packaging.
Return procedure for IRLR3103TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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