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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3103TRLPBF

Name: IRLR3103TRLPBF
Brand: Infineon Technologies
SKU: IRLR3103TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3103TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3103TRLPBF.pdf

Description:: MOSFET N-CH 30V 55A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR3103TRLPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D-PAK (TO-252AA) package, designed for high-efficiency DC-DC conversion and motor control switching. It delivers 55 A continuous drain current at 25°C, 30 V V_DSS, 0.019 Ω R_DS(on) @ V_GS = 10 V, and is fully avalanche-rated for rugged operation in automotive body electronics and industrial power supplies.

For engineers reviewing the IRLR3103TRLPBF datasheet, IRLR3103TRLPBF pinout, IRLR3103TRLPBF application, or IRLR3103TRLPBF equivalent, key selection criteria include its low 4.5 V gate threshold, 50 nC total gate charge, 240 mJ single-pulse avalanche energy, and surface-mount D-PAK thermal performance with 1.4 °C/W junction-to-case resistance.

Technical Context

This HEXFET device uses fifth-generation silicon process technology to minimize conduction loss while maintaining fast switching (t_r = 210 ns, t_f = 54 ns) and robust unclamped inductive switching capability. Its internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) are characterized for accurate layout modeling in high-di/dt applications.

The MOSFET features a fully rated body diode with 1.3 V forward voltage at 28 A and 81–120 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche onset; suitable for 24 V nominal bus systems.
R_DS(on) @ 10 V	0.019 Ω - Enables ≤1.05 W conduction loss at 55 A, reducing heatsink requirements.
I_D @ 25°C	55 A - Continuous current rating under ideal thermal mounting; limited to 39 A at 100°C case temperature.
E_AS	240 mJ - Single-pulse avalanche energy tolerance supports reliable operation during load dump or inductive turn-off transients.
Q_g	50 nC - Total gate charge determines driver strength requirement; compatible with standard logic-level gate drivers.
C_iss	1600 pF - Input capacitance impacts gate drive loop stability and switching speed in high-frequency SMPS designs.
t_r/t_f	210/54 ns - Fast edge rates enable >500 kHz switching in hard-switched topologies with controlled EMI.

Pinout & Package

IRLR3103TRLPBF is housed in a surface-mount D-PAK (TO-252AA) package with exposed drain pad for enhanced thermal dissipation. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is optimized for vapor-phase and IR reflow soldering per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side return path; internally connected to substrate; forms cathode of integrated body diode.
Pin 2 (Gate)	Control input (G)	Logic-level compatible; V_GS(th) = 1.0–2.5 V enables direct microcontroller drive without level-shifting.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom surface; primary heat transfer path to PCB copper pour or heatsink.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.019 Ω @ 10 V ensures <1 W conduction loss at 55 A, minimizing thermal stress in compact layouts.
Fully avalanche-rated	240 mJ E_AS and 34 A I_AR allow safe operation under unclamped inductive switching without snubbers.
Logic-level gate drive	V_GS(th) max 2.5 V enables direct interface with 3.3 V/5 V MCUs and PWM controllers without gate drivers.
Lead-free and RoHS-compliant	"PbF" suffix confirms exemption-free compliance with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020.
Optimized for surface mount	D-PAK footprint supports automated assembly and achieves 1.4 °C/W R_θJC with 1"² FR-4 copper area.

Applications

Automotive Body Control Module (BCM)

Industrial DC Motor Driver

Use Scenario: High-side load switching for headlights, HVAC actuators, and window lift motors in 12 V/24 V vehicle electrical systems.

IC Role / Device Role / Timing Role: N-channel high-side switch with external bootstrap or charge-pump gate drive; handles repetitive 34 A pulsed loads.

Use Value: 0.024 Ω R_DS(on) @ 4.5 V reduces on-state power loss by >40% vs. legacy MOSFETs, extending relay life and lowering system temperature rise.

Use Scenario: Half-bridge leg in 24 V brushed DC motor drives for factory automation and robotics.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge topology; commutates up to 55 A continuous current with 54 ns fall time.

Use Value: 240 mJ avalanche energy rating eliminates need for external flyback diodes during motor stall or reversal events.

Server VRM Synchronous Rectifier

Telecom DC-DC Converter

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated buck converters for data center power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes; driven by controller's complementary gate signal.

Use Value: 1.3 V V_SD body diode forward drop and 81 ns t_rr minimize reverse recovery losses, improving efficiency by 1.2–1.8% at full load.

Use Scenario: Primary-side switching in 48 V input telecom brick converters delivering 3.3 V/5 V/12 V outputs.

IC Role / Device Role / Timing Role: Main power switch in active-clamp forward or LLC resonant topologies operating at 200–500 kHz.

Use Value: 1600 pF C_iss and 320 pF C_rss support stable zero-voltage switching (ZVS) initiation with minimal dead-time penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3713TRPBF	R_DS(on) = 0.0065 Ω @ 10 V; higher 110 A I_D; larger D₂PAK package	Better suited for >80 A peak-current applications where board space allows larger footprint	Select when lower conduction loss justifies increased package size and cost.
STL220N3LLH6	R_DS(on) = 0.0022 Ω @ 10 V; 220 A I_D; ST's STripFET™ H6 process; different pinout (G-S-D)	Requires PCB redesign due to reversed source/drain pin assignment and higher gate charge (75 nC)	Choose only if ultra-low R_DS(on) is critical and layout revision is feasible.

Compared with IRLR3103TRLPBF, IRLR3713TRPBF offers lower on-resistance but requires more PCB area, while STL220N3LLH6 delivers significantly lower conduction loss at the expense of gate drive compatibility and pinout rework-making IRLR3103TRLPBF optimal for cost-sensitive, space-constrained 24–48 V systems requiring proven reliability.

Availability

IRLR3103TRLPBF is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, server VRMs, and telecom DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRLR3103TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, medium-voltage switching in automotive, industrial, and computing power systems where ruggedness, low R_DS(on), and avalanche capability are essential.

FAQ

What is the maximum allowable gate-to-source voltage for IRLR3103TRLPBF?

The absolute maximum V_GS is ±16 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to +12 V maximum with a 10 kΩ pull-down resistor to ensure fast turn-off and prevent unintended conduction during noise transients.

Can IRLR3103TRLPBF be used in a high-side configuration with 12 V supply?

Yes, but it requires a gate drive voltage ≥10 V referenced to the source. In high-side operation, a bootstrap circuit or isolated gate driver must generate V_GS ≥10 V above the switching node. The 1.0–2.5 V gate threshold enables reliable turn-on even with marginal gate overdrive.

Does IRLR3103TRLPBF have a specified SOA curve for linear mode operation?

Yes-Figure 8 in the datasheet provides the maximum safe operating area (SOA) for both single-pulse and repetitive conditions. At 25°C case temperature, it supports 55 A at 10 V V_DS for 10 µs pulses, with derating to 10 A at 30 V for 1 ms pulses due to thermal limits.

Is the body diode suitable for continuous freewheeling in a buck converter?

Yes-the body diode is rated for 28 A continuous source current and 34 A pulsed current, with 1.3 V forward drop at 28 A and 81 ns typical reverse recovery time. For high-frequency (>300 kHz) operation, synchronous rectification is recommended to avoid reverse recovery losses.

IRLR3103TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3103TRLPBF FAQ

1.How can I place an order for IRLR3103TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3103TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3103TRLPBF reliable?

The price and inventory of IRLR3103TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3103TRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR3103TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3103TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3103TRLPBF?

IRLR3103TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3103TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3103TRLPBF?

For technical support, including IRLR3103TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3103TRLPBF requirements.

6.How does Aetrix verify that IRLR3103TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3103TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3103TRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR3103TRLPBF?

All IRLR3103TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3103TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3103TRLPBF part is unused and in its original packaging.

Return procedure for IRLR3103TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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