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Infineon Technologies IRLR3103TRPBF

Part No.:
IRLR3103TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR3103TRPBF.pdf
Description:
MOSFET N-CH 30V 55A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,891

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Product details

Overview

IRLR3103TRPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D-PAK (TO-252AA) package, designed for high-efficiency DC-DC conversion and motor control switching. It delivers 55 A continuous drain current at 25°C, 30 V VDSS, and ultra-low 19 mΩ RDS(on) at VGS = 10 V - enabling low conduction loss in 12 V automotive and industrial power rails.

For engineers reviewing the IRLR3103TRPBF datasheet, IRLR3103TRPBF pinout, IRLR3103TRPBF application, or IRLR3103TRPBF equivalent, key selection criteria include its 4.5 V logic-compatible gate drive, 240 mJ single-pulse avalanche energy rating, fast 210 ns rise time, and surface-mount D-PAK thermal performance with 1.4 °C/W RθJC.

Technical Context

This HEXFET device uses fifth-generation silicon process to minimize RDS(on) per die area while maintaining rugged unclamped inductive switching capability. Its body diode exhibits 1.3 V forward voltage at 28 A and 81–120 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck converters.

The gate charge profile shows 50 nC total Qg, with 28 nC Miller charge (Qgd) and 14 nC gate-to-source charge (Qgs), enabling efficient 4.5 V–10 V gate driving without excessive driver power dissipation. Thermal design is anchored by validated junction-to-case resistance of 1.4 °C/W.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - supports 12 V nominal systems with 2.5× voltage margin against transients
RDS(on) @ 10 V0.019 Ω - yields ≤1.0 W conduction loss at 7.3 A RMS in continuous operation
ID @ 25°C55 A - enables high-current load switching without external heatsinking below 10 W dissipation
EAS240 mJ - withstands unclamped inductive energy spikes up to 34 A × 15 V × 4.7 µs
Qg50 nC - determines gate driver current requirement: ≥2.5 mA avg. for 20 kHz PWM at 10 V swing
RθJC1.4 °C/W - allows direct thermal coupling to PCB copper pour for >80% of junction heat removal
tr/tf210 ns / 54 ns - supports <500 kHz hard-switching with controlled EMI via gate resistor tuning

Pinout & Package

IRLR3103TRPBF is housed in a surface-mount D-PAK (TO-252AA) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-S-D order (left-to-right when viewing top marking side).

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control electrodeLogic-level compatible: fully enhanced at VGS = 4.5 V; ±16 V absolute max rating
Source (S)Reference node for gate drive and current returnInternally bonded to source metallization; LS = 7.5 nH limits high-di/dt ringing
Drain (D)Main power output terminalExposed copper pad on bottom; electrically and thermally tied to internal die drain

Key Features

FeatureDesign Value
Logic-level gate driveGuaranteed turn-on at VGS = 4.5 V, enabling direct interface with 3.3 V/5 V microcontrollers
Fully avalanche-ratedRated for repetitive unclamped inductive switching up to 11 mJ per pulse (EAR)
Ultra-low RDS(on)0.019 Ω @ 10 V reduces I²R losses by >40% vs. prior-gen 30 V MOSFETs at same current
Optimized for surface mountD-PAK footprint supports automated reflow; 300 °C soldering tolerance (10 s, 1.6 mm from case)
Lead-free constructionRoHS-compliant Pb-free plating and packaging; "PbF" suffix confirms compliance

Applications

Automotive Body Control ModuleIndustrial DC Motor Driver

Use Scenario: Driving 12 V solenoids, relays, and LED arrays in vehicle door modules and lighting controllers.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling load current up to 55 A peak.

Use Value: 19 mΩ RDS(on) minimizes self-heating during 100% duty-cycle operation, extending module lifetime in sealed enclosures.

Use Scenario: H-bridge leg switching in 24 V brushed DC motor drives for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element with fast 54 ns fall time to reduce cross-conduction losses.

Use Value: 240 mJ EAS rating safely absorbs back-EMF energy during abrupt motor stop commands.

Server VRM Synchronous RectifierTelecom DC-DC Converter

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated buck converters for data center PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency at 50–100 A loads.

Use Value: 1.3 V VSD body diode forward drop and 81 ns trr enable low-loss freewheeling during dead-time intervals.

Use Scenario: Primary-side switching in 48 V input telecom power supplies delivering 12 V/20 A outputs.

IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward or LLC resonant topologies.

Use Value: 50 nC Qg and 320 pF Crss support zero-voltage switching (ZVS) initiation with minimal gate drive overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR3103PBFSame die, identical specs; differs only in tape-and-reel packaging (TRPBF = tape/reel, PBF = bulk)No functional difference; TRPBF preferred for SMT line feed, PBF for manual prototypingSelect TRPBF for automated assembly; PBF acceptable for low-volume evaluation
STP30NF20Higher VDSS (200 V), higher RDS(on) (0.042 Ω), TO-220 package, non-logic-level (VGS(th) = 2–4 V)Requires gate driver for 3.3 V logic; unsuitable for space-constrained D-PAK layoutsOnly consider if 200 V rating or through-hole mounting is mandatory

Compared with IRLR3103TRPBF, the identical IRLR3103PBF offers packaging flexibility but no electrical change, while STP30NF20 trades lower voltage rating and logic compatibility for higher breakdown - making it incompatible for 12 V logic-driven designs without added drive circuitry.

Availability

IRLR3103TRPBF is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, server VRMs, and telecom DC-DC converters requiring stable component supply and full RoHS compliance.

Supply support for IRLR3103TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous automotive-grade qualification and industrial reliability standards.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-current, low-voltage switching in space-constrained surface-mount applications where thermal efficiency and logic-level drivability are critical.

FAQ

What is the maximum safe operating temperature for IRLR3103TRPBF?

The device supports junction temperatures from –55°C to +175°C. Maximum continuous operation occurs at TJ = 175°C, with derating beginning at TC = 25°C at 0.71 W/°C. At 107 W power dissipation, case temperature must be held ≤25°C using a heatsink or large copper pour to avoid exceeding TJ limit.

Can IRLR3103TRPBF be used in a high-side configuration with 12 V supply?

Yes - its 30 V VDSS provides sufficient margin for 12 V rail switching, and its logic-level gate threshold (1.0–2.5 V) allows direct drive from 12 V gate drivers. However, a dedicated high-side driver IC is required to generate VGS >10 V relative to the switching node; bootstrap or isolated gate drive is necessary for full enhancement.

Does IRLR3103TRPBF have integrated ESD protection?

No - this MOSFET lacks on-die ESD protection structures. External gate protection (e.g., 10 kΩ series resistor + 12 V Zener clamp to source) is required in handling and PCB layout to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV, especially during manual assembly or probe testing.

How does the D-PAK package affect thermal performance compared to TO-220?

The D-PAK's exposed drain pad enables direct thermal transfer to PCB copper, achieving RθJC = 1.4 °C/W - significantly better than TO-220's typical 1.8–2.5 °C/W. However, RθJA is higher (50 °C/W on 1″² FR-4) due to limited airflow; optimal cooling requires ≥2 in² of 2-oz copper connected to the drain pad via multiple thermal vias.

IRLR3103TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
19mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRLR3103TRPBF FAQ

1.How can I place an order for IRLR3103TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3103TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3103TRPBF reliable?

The price and inventory of IRLR3103TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3103TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR3103TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3103TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3103TRPBF?

IRLR3103TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3103TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3103TRPBF?

For technical support, including IRLR3103TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3103TRPBF requirements.

6.How does Aetrix verify that IRLR3103TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3103TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3103TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR3103TRPBF?

All IRLR3103TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3103TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3103TRPBF part is unused and in its original packaging.

Return procedure for IRLR3103TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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