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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3103TRR

Name: IRLR3103TRR
Brand: Infineon Technologies
SKU: IRLR3103TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3103TRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3103TRR.pdf

Description:: MOSFET N-CH 30V 55A DPAK

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Product details

Overview

IRLR3103TRR from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D-PAK (TO-252AA) package, rated for 30V V_DSS, 55A continuous drain current at T_C = 25°C, and 0.019Ω R_DS(on) at V_GS = 10V. It features fully avalanche-rated ruggedness, fast switching (t_r = 210 ns, t_f = 54 ns), and is optimized for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRLR3103TRR datasheet, IRLR3103TRR pinout, IRLR3103TRR application, or IRLR3103TRR equivalent, key selection criteria include gate threshold voltage (1.0–2.5 V), low R_DS(on) at 4.5 V (0.024 Ω), body diode reverse recovery charge (Q_rr = 210–310 nC), thermal resistance (R_θJC = 1.4 °C/W), and unclamped inductive switching capability (E_AS = 240 mJ).

Technical Context

This HEXFET device uses fifth-generation silicon process technology to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) up to 100 µs at 30 V. Its logic-level gate enables direct drive from 3.3 V or 5 V microcontrollers without gate drivers.

The integrated body diode exhibits 1.3 V forward voltage at 28 A and 25°C, with reverse recovery time (t_rr) of 81–120 ns under 100 A/µs di/dt - critical for synchronous rectification and freewheeling in buck converters and H-bridge motor control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche; sets upper limit for input rail in 24 V systems.
R_DS(on) @ V_GS = 10 V	0.019 Ω - Conduction loss of 3.5 W at 13.5 A (e.g., 50% load in 27 A max design); enables compact thermal design.
R_DS(on) @ V_GS = 4.5 V	0.024 Ω - Confirmed operation with 3.3 V logic; supports direct MCU GPIO drive in battery-powered controllers.
Q_g	50 nC - Total gate charge determines driver power requirement; compatible with low-power gate drivers like IR2110's low-side output.
t_r/t_f	210 ns / 54 ns - Fast edge rates reduce switching losses in 100–500 kHz SMPS; requires careful PCB layout to suppress EMI.
E_AS	240 mJ - Single-pulse avalanche energy rating allows reliable operation during inductive turn-off transients without external snubbers.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance enables >80 W dissipation with moderate heatsinking (e.g., 25 mm² copper pour + thermal pad).

Pinout & Package

IRLR3103TRR is housed in a surface-mount D-PAK (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package supports vapor-phase, infrared, and wave soldering, and is rated for 300°C peak solder temperature (1.6 mm from case) for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <50 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on underside - primary thermal path and high-current drain connection; must be soldered to large copper area.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for level-shifting or dedicated gate drivers in 3.3 V/5 V systems.
Fully avalanche rated	Guaranteed single-pulse E_AS = 240 mJ - enables robust operation in inductive switching without external clamping circuits.
Ultra-low R_DS(on)	0.019 Ω @ 10 V - reduces conduction loss by >30% vs. legacy 30 V MOSFETs (e.g., IRLZ34N), improving efficiency in high-current 12–24 V rails.
Fast body diode	t_rr = 81–120 ns, Q_rr = 210–310 nC - minimizes reverse recovery loss in synchronous rectifiers and half-bridge freewheeling paths.
Lead-free construction	RoHS-compliant Pb-free finish (per "PbF" suffix) - meets global environmental compliance requirements for industrial and automotive applications.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: Driving brushed DC motors in power tools or robotics using dual IRLR3103TRR in high-side/low-side configuration.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles continuous 39 A at 100°C case temperature with minimal heat buildup.

Use Value: Logic-level gate allows direct PWM from STM32 GPIO; low R_DS(on) keeps junction temperature below 150°C at 20 A load with 2 oz copper.

Use Scenario: High-efficiency 24 V input → 5 V/15 A output buck converter for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET); replaces Schottky diode to eliminate 0.4 V forward drop loss.

Use Value: Q_rr < 310 nC and t_rr < 120 ns prevent shoot-through risk at 300 kHz switching; improves efficiency by 2.1% over diode-based design.

Hot-Swap Controller

LED Driver Current Switch

Use Scenario: Inrush current limiting and fault protection in 12 V backplane hot-swap cards for telecom equipment.

IC Role / Device Role / Timing Role: Main pass element controlled by external current-sense amplifier and comparator; withstands repeated 220 A pulsed drain events.

Use Value: IDM = 220 A and E_AS = 240 mJ enable safe handling of capacitive load surges without derating or parallel devices.

Use Scenario: Constant-current switching for high-brightness LED strings in architectural lighting fixtures (24 V bus, 3 A per channel).

IC Role / Device Role / Timing Role: PWM-controlled current sink; operates in linear region during dimming transitions with stable thermal response.

Use Value: R_θJC = 1.4 °C/W allows 3 A continuous current with <40°C rise over ambient using only PCB copper - no heatsink required.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3103PBF	Same die, TO-220AB through-hole package; R_DS(on) identical; higher R_θJA (62 °C/W vs. 50 °C/W for D-PAK).	Requires heatsink for >15 A continuous; unsuitable for dense SMT layouts.	Select when mechanical mounting or serviceability outweighs board space constraints.
STP30NF20	200 V V_DSS, 30 A ID, 0.045 Ω R_DS(on); slower switching (t_f = 100 ns), no logic-level gate (V_GS(th) = 2–4 V).	Not logic-level; requires gate driver for 3.3 V control; higher conduction loss at same current.	Select only if 200 V rating is mandatory and gate drive voltage ≥ 10 V is available.

Compared with IRLR3103TRR, IRL3103PBF trades surface-mount convenience for easier heatsinking, while STP30NF20 sacrifices low-voltage drive and on-resistance for higher voltage capability - neither offers drop-in replacement without circuit redesign.

Availability

IRLR3103TRR is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and hot-swap controllers requiring stable component supply, RoHS-compliant lead-free construction, and proven avalanche ruggedness in industrial environments.

Supply support for IRLR3103TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line - including IRLR3103TRR - was originally developed by International Rectifier and continues under Infineon to deliver high-current, low-R_DS(on), logic-level switching solutions for industrial motor control and power conversion.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR3103TRR supports 39 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from 55 A at 25°C, governed by the 0.71 W/°C linear derating factor and package thermal limits.

Does IRLR3103TRR require a gate resistor for stability?

Yes - a series gate resistor (typically 3.4–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 320 pF) and PCB inductance. The datasheet specifies switching times with R_G = 3.4 Ω; omitting it risks oscillation, shoot-through, or gate overshoot exceeding ±16 V absolute maximum.

Can IRLR3103TRR replace IRLZ34N in an existing design?

Yes, with validation: both are logic-level N-channel MOSFETs in D-PAK, but IRLR3103TRR has lower R_DS(on) (0.019 Ω vs. 0.035 Ω), higher ID (55 A vs. 30 A), and faster switching. Layout and gate drive strength must be verified - especially for t_f reduction from 100 ns to 54 ns - to avoid EMI or shoot-through.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode is characterized with t_rr = 81–120 ns and Q_rr = 210–310 nC at di/dt = 100 A/µs, making it viable for synchronous rectification up to ~500 kHz. However, its V_SD = 1.3 V at 28 A is higher than Schottky diodes, so efficiency gain depends on duty cycle and switching frequency.

IRLR3103TRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3103TRR FAQ

1.How can I place an order for IRLR3103TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3103TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3103TRR reliable?

The price and inventory of IRLR3103TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3103TRR is usually 5 days.

3.What payment methods are accepted for IRLR3103TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3103TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3103TRR?

IRLR3103TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3103TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3103TRR?

For technical support, including IRLR3103TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3103TRR requirements.

6.How does Aetrix verify that IRLR3103TRR is sourced from the original manufacturer or authorized distributors?

All IRLR3103TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3103TRR meets industry standards.

7.What is the process for return or replacement of IRLR3103TRR?

All IRLR3103TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3103TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3103TRR part is unused and in its original packaging.

Return procedure for IRLR3103TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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