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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3103TRRPBF

Name: IRLR3103TRRPBF
Brand: Infineon Technologies
SKU: IRLR3103TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3103TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3103TRRPBF.pdf

Description:: MOSFET N-CH 30V 55A DPAK

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Product details

Overview

IRLR3103TRRPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D-PAK (TO-252AA) package, rated for 30V V_DSS, 55A continuous drain current at T_C = 25°C, and 0.019Ω R_DS(on) at V_GS = 10V. It features ultra-low on-resistance, full avalanche rating, and fast switching for high-efficiency DC-DC converters, motor drives, and load switches.

For engineers reviewing the IRLR3103TRRPBF datasheet, IRLR3103TRRPBF pinout, IRLR3103TRRPBF application, or IRLR3103TRRPBF equivalent, key selection criteria include gate threshold voltage (1.0–2.5V), total gate charge (50 nC), body diode reverse recovery time (81–120 ns), and thermal resistance (R_θJC = 1.4°C/W), critical for thermal design and PWM efficiency in compact power stages.

Technical Context

This MOSFET employs fifth-generation HEXFET® process technology to achieve low R_DS(on) per die area while maintaining rugged unclamped inductive switching capability (E_AS = 240 mJ). Its logic-level gate drive (V_GS(th) = 1.0–2.5V) enables direct interfacing with 3.3V/5V microcontrollers without level-shifting.

The device integrates a fast, low-Q_rr body diode (Q_rr = 210–310 nC, t_rr = 81–120 ns) and exhibits controlled dv/dt immunity (5.0 V/ns peak diode recovery), supporting reliable synchronous rectification and hard-switched topologies up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche; suitable for 24V nominal bus systems with margin.
R_DS(on) @ V_GS = 10V	0.019 Ω - Conduction loss of ≤3.5 W at 55A, enabling high-current, low-heat operation.
I_D @ T_C = 25°C	55 A - Continuous current rating under ideal heatsinking; derates to 39A at 100°C case temperature.
Q_g	50 nC - Total gate charge determines driver strength requirement; supports efficient 500 kHz–1 MHz switching with moderate gate drivers.
t_rr	81–120 ns - Body diode reverse recovery time impacts shoot-through risk and EMI in half-bridge configurations.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance enables precise thermal modeling when mounted on copper pads.
E_AS	240 mJ - Single-pulse avalanche energy rating confirms robustness against inductive switching transients without external snubbers.

Pinout & Package

IRLR3103TRRPBF uses the surface-mount D-PAK (TO-252AA) package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard configuration: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Control input	Logic-level compatible; requires ≤2.5V to turn on fully; driven by MCU GPIO or dedicated gate driver.
D (Pin 2)	High-side or low-side power path	Connected to PCB copper pour for heat dissipation; electrically tied to exposed drain tab (pin 2 and tab are same node).
S (Pin 3)	Return path / reference node	Source terminal forms common return for gate drive and load current; must be low-inductance layout to minimize switching oscillation.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) as low as 1.0 V ensures full enhancement with 3.3V controllers-no level shifter needed.
Ultra-low R_DS(on)	0.019 Ω at 10V reduces conduction losses by >30% vs. legacy 30V MOSFETs in 50A applications.
Full avalanche rated	240 mJ single-pulse E_AS allows safe operation under unclamped inductive switching without external protection.
Fast body diode	81 ns typical t_rr and 210 nC Q_rr reduce switching loss and ringing in synchronous buck and H-bridge topologies.
Lead-free & RoHS compliant	"PbF" suffix and "P" in lot code confirm lead-free construction per JEDEC J-STD-020 reflow profile requirements.

Applications

DC-DC Synchronous Buck Converter

Brushed DC Motor Drive

Use Scenario: High-efficiency 24V-to-5V/12V point-of-load converter in industrial PLCs and telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with gate driven by controller's integrated driver.

Use Value: 0.019Ω R_DS(on) cuts conduction loss by ~40% vs. Schottky diode replacement, improving full-load efficiency by 2–3%.

Use Scenario: H-bridge driver for 24V brushed motors in robotics and automated guided vehicles (AGVs).

IC Role / Device Role / Timing Role: High-current quadrant switch handling bidirectional 30–50A motor current with PWM-controlled direction and speed.

Use Value: Full avalanche rating absorbs inductive kickback during rapid PWM reversal, eliminating need for external flyback diodes.

Hot-Swap Controller

Load Switch for Server VRMs

Use Scenario: Inrush current limiting and fault protection in 12V/24V backplane hot-swap modules.

IC Role / Device Role / Timing Role: Main pass element controlled by dedicated hot-swap IC (e.g., LTC4215) to ramp voltage linearly during insertion.

Use Value: Low R_DS(on) minimizes voltage drop across FET during steady-state operation, preserving rail accuracy and reducing thermal stress.

Use Scenario: Output stage switch enabling/disabling CPU/GPU voltage rails in datacenter server VRMs.

IC Role / Device Role / Timing Role: High-current load switch placed between multiphase buck output and processor socket, controlled via PMBus or GPIO.

Use Value: 55A continuous rating and 220A pulsed capability support transient load steps up to 100A without derating or paralleling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3103PBF	Same die, TO-220 package; higher R_θJA (62°C/W vs. 50°C/W), no exposed drain pad.	Requires heatsink; unsuitable for space-constrained SMT designs.	Select for prototyping or low-volume through-hole assembly where thermal mass outweighs footprint constraints.
STP30NF3LL	30V, 30A, R_DS(on) = 0.022Ω; lower current rating, different gate charge profile (Q_g = 35 nC).	Better suited for <30A loads; faster turn-on but reduced avalanche margin (E_AS = 120 mJ).	Choose when gate drive strength is limited and peak current stays below 30A; verify avalanche robustness in inductive loads.

Compared with IRLR3103TRRPBF, IRL3103PBF trades SMT compatibility for easier thermal management in discrete builds, while STP30NF3LL offers lower gate drive demand at the cost of current capacity and transient ruggedness-making the IRLR3103TRRPBF optimal for high-density, high-current 24V power stages requiring both efficiency and reliability.

Availability

IRLR3103TRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, hot-swap modules, and server load switches requiring stable component supply and long-term industrial availability.

Supply support for IRLR3103TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, with global manufacturing, AEC-Q101 qualified lines, and broad portfolio coverage from low-voltage logic-level MOSFETs to high-voltage SiC devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, computing, and automotive auxiliary systems-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum junction temperature for continuous operation?

The IRLR3103TRRPBF has a specified operating junction temperature range of –55°C to +175°C. For continuous operation, thermal design must ensure T_J remains ≤175°C under worst-case ambient, power dissipation, and PCB copper area conditions-typically achieved using ≥1 in² FR-4 copper with thermal vias to internal planes.

Is this MOSFET suitable for use as a high-side switch with 5V gate drive?

Yes-its logic-level gate threshold (1.0–2.5V) and guaranteed R_DS(on) of 0.024Ω at V_GS = 4.5V make it fully enhancement-capable with 5V microcontroller outputs. However, high-side operation requires a floating gate driver (e.g., bootstrap or isolated) to maintain V_GS > 4.5V relative to the source.

Does the body diode support continuous reverse conduction in synchronous rectification?

The integrated body diode is rated for continuous source current (I_S) up to 55A and pulsed source current (I_SM) up to 220A. Its V_SD = 1.3V at 28A and t_rr = 81–120 ns enable effective synchronous rectification, though external Schottky diodes may be preferred for ultra-low forward drop in high-frequency designs.

How does the D-PAK package affect PCB layout and thermal performance?

The D-PAK (TO-252AA) exposes the drain on the underside of the package, requiring a large copper pad (≥1 in² recommended) with ≥6 thermal vias to inner ground/power planes. This achieves R_θJC = 1.4°C/W and R_θJA ≈ 50°C/W on 1-in² FR-4-critical for sustaining 55A without excessive temperature rise.

IRLR3103TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3103TRRPBF FAQ

1.How can I place an order for IRLR3103TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3103TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3103TRRPBF reliable?

The price and inventory of IRLR3103TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3103TRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR3103TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3103TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3103TRRPBF?

IRLR3103TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3103TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3103TRRPBF?

For technical support, including IRLR3103TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3103TRRPBF requirements.

6.How does Aetrix verify that IRLR3103TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3103TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3103TRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR3103TRRPBF?

All IRLR3103TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3103TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3103TRRPBF part is unused and in its original packaging.

Return procedure for IRLR3103TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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