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Infineon Technologies IRLR3105PBF
- Part No.:
- IRLR3105PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR3105PBF.pdf
- Description:
- MOSFET N-CH 55V 25A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,002
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Product details
Overview
IRLR3105PBF from Infineon Technologies is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, rated for 55 V VDSS, 25 A continuous drain current at TC = 25°C, and 0.037 Ω RDS(on) at VGS = 10 V. It features 175°C maximum junction temperature, fast switching (tr = 57 ns, tf = 37 ns), and rated repetitive avalanche capability-designed for DC-DC converters, motor control, and high-efficiency power switching in industrial and automotive subsystems.
For engineers reviewing the IRLR3105PBF datasheet, IRLR3105PBF pinout, IRLR3105PBF application, or IRLR3105PBF equivalent, key selection criteria include its logic-level gate drive (VGS(th) = 1.0–3.0 V), low thermal resistance (RθJC = 2.65 °C/W), body diode recovery performance (trr = 52–78 ns), and avalanche energy rating (EAS = 61 mJ).
Technical Context
This HEXFET® device uses advanced planar processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche ruggedness. Its gate threshold voltage range (1.0–3.0 V) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs, and its 175°C operating temperature supports high-density thermal designs without derating penalties.
The integrated body diode exhibits VSD = 1.3 V at IS = 15 A and TJ = 25°C, with reverse recovery charge Qrr = 82–120 nC and peak diode recovery dv/dt = 3.4 V/ns-critical for minimizing switching losses and EMI in hard-switched topologies like synchronous buck regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche onset; enables use in 48 V nominal bus systems with margin. |
| RDS(on) | 0.037 Ω @ VGS = 10 V - Low conduction loss yields <0.93 W dissipation at 5 A, reducing heatsink requirements. |
| ID (continuous) | 25 A @ TC = 25°C - Sustains full load in compact surface-mount PCB layouts with adequate copper area. |
| tr/tf | 57 ns / 37 ns - Fast edge rates minimize overlap loss in PWM switching, supporting >200 kHz operation. |
| EAS | 61 mJ - Single-pulse avalanche energy rating allows safe operation under inductive turn-off transients. |
| RθJC | 2.65 °C/W - Enables direct thermal coupling to heatsink or copper pour, limiting junction rise to ~67°C at 25 W. |
| Qg | 20 nC - Gate charge compatible with standard gate drivers (e.g., IR2110, UCC27531) without excessive drive power. |
Pinout & Package
IRLR3105PBF is housed in a surface-mount D-Pak (TO-252) package with three terminals: Source (S), Drain (D), and Gate (G). The exposed drain pad provides low-inductance, high-current path and primary thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main high-side current path terminal | Internally connected to exposed metal pad; must be soldered to ≥1 in² copper pour for thermal and current handling. |
| Source (S) | Reference node for gate drive and current return | Common connection point for gate driver ground and load return; low-inductance layout critical for stability. |
| Gate (G) | Control electrode for channel modulation | High-impedance input requiring <20 nC total charge; susceptible to ringing if not routed with controlled impedance and local decoupling. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with 3.3 V or 5 V MCU GPIO-eliminates need for level-shifting or dedicated gate drivers in low-voltage control stages. |
| 175°C maximum junction temperature | Enables operation in sealed enclosures or high-ambient environments (e.g., engine bay, industrial cabinets) without forced cooling. |
| Repetitive avalanche rated | Guaranteed safe operation under unclamped inductive switching events up to TJmax, verified per JEDEC JESD24-11. |
| Ultra-low RDS(on) | Reduces I²R losses by >40% vs. legacy 55 V MOSFETs, improving efficiency in 12–48 V battery-powered systems. |
| Low Qgd/Qgs ratio | 9.0 nC / 5.6 nC = 1.6 - Minimizes Miller effect, enabling stable high-speed switching even with moderate gate resistance (RG = 24 Ω). |
Applications
| Brushless DC Motor Driver | Automotive Body Control Module |
|---|---|
|
Use Scenario: Half-bridge leg in 24 V BLDC fan or pump controller with PWM frequency >20 kHz. IC Role / Device Role / Timing Role: High-side or low-side switching element controlling phase current; synchronized to commutation timing via MCU. Use Value: Low RDS(on) and fast switching reduce conduction + switching losses to <1.2 W per FET at 10 A RMS, enabling passive cooling. |
Use Scenario: Load switch for headlight dimming, seat heater, or HVAC blower in 12 V vehicle electrical architecture. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay; driven directly by 3.3 V CAN/LIN microcontroller output. Use Value: Logic-level VGS(th) ensures full enhancement at 3.3 V, eliminating external level shifters and reducing BOM count by one IC. |
| Industrial DC-DC Converter | Power over Ethernet (PoE) PSE |
|
Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V flyback converter for factory automation PLCs. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; gated by transformer-coupled or opto-isolated signal. Use Value: 0.037 Ω RDS(on) cuts forward drop from 0.5 V to <40 mV at 10 A, raising conversion efficiency by 2.1% at full load. |
Use Scenario: Power switch in IEEE 802.3at Type 2 (30 W) PSE controller managing up to four powered devices. IC Role / Device Role / Timing Role: Class detection and power delivery switch; subjected to hot-swap surge and fault current interruption. Use Value: Rated repetitive avalanche and 100 A pulsed drain current (IDM) withstand 80 V inrush and short-circuit events without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | RDS(on) = 0.018 Ω @ 10 V but VDSS = 60 V; TO-220 package; higher Qg = 45 nC | Requires heatsink due to through-hole package; better for lower-frequency, higher-current linear regulation | Prefer when thermal mass > PCB copper is available and gate drive strength supports higher Qg. |
| AOB414 | RDS(on) = 0.028 Ω @ 10 V; DFN5x6 package; RθJA = 40 °C/W (PCB mount); no avalanche rating specified | Smaller footprint but limited transient ruggedness; unsuitable for unclamped inductive loads | Choose only in space-constrained, low-energy switching applications where avalanche stress is absent. |
Compared with STP55NF06L and AOB414, IRLR3105PBF offers optimal balance of logic-level drive, surface-mount D-Pak thermal performance, and guaranteed avalanche capability-making it uniquely suited for automotive and industrial switching where reliability under transient stress is non-negotiable.
Availability
IRLR3105PBF is available at Aetrix Electronics and suitable for brushless DC motor drives, automotive body control modules, and industrial DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for IRLR3105PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.
The IRLR series targets logic-compatible, high-reliability power switching in automotive and industrial environments-designed specifically to replace mechanical relays and discrete driver+MOSFET combinations with single-package robustness.
FAQ
Is IRLR3105PBF suitable for 3.3 V microcontroller gate drive?
Yes. With VGS(th) ranging from 1.0 V to 3.0 V and full enhancement achieved at VGS = 4.5 V (RDS(on) ≤ 0.043 Ω), the device reliably switches at 3.3 V logic levels. Measured RDS(on) is 0.037 Ω at VGS = 10 V and 0.043 Ω at VGS = 5 V, confirming strong conduction even below nominal logic thresholds.
What is the maximum PCB copper area required for thermal management at 25 A continuous?
At 25 A and 0.037 Ω RDS(on), power dissipation is 23 W. With RθJC = 2.65 °C/W and typical RθCA ≈ 20 °C/W on 1 in² FR-4, junction-to-ambient rise is ~520°C-exceeding limits. For safe operation, ≥2.5 in² of 2-oz copper with thermal vias to internal planes is required to hold TJ ≤ 150°C at 25 A.
Does IRLR3105PBF have a qualified avalanche rating for repetitive operation?
Yes. The datasheet specifies "Repetitive Avalanche Allowed up to Tjmax" and provides Figures 15 and 16 showing allowable avalanche energy vs. pulse width and temperature. Tested EAS = 94 mJ (single-pulse), and repetitive operation is permitted as long as junction temperature remains ≤175°C per AN-1005 guidelines.
Can IRLR3105PBF replace IRLU3105PBF in a design?
Yes, with mechanical adaptation. Both share identical electrical specs and die, but IRLR3105PBF uses D-Pak (surface-mount) while IRLU3105PBF uses I-Pak (through-hole). Pinout is identical (D-S-G), so schematic compatibility is maintained; only PCB footprint and assembly process differ.
IRLR3105PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 37mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 710 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR3105PBF FAQ
1.How can I place an order for IRLR3105PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR3105PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR3105PBF reliable?
The price and inventory of IRLR3105PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3105PBF is usually 5 days.
3.What payment methods are accepted for IRLR3105PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3105PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR3105PBF?
IRLR3105PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR3105PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR3105PBF?
For technical support, including IRLR3105PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3105PBF requirements.
6.How does Aetrix verify that IRLR3105PBF is sourced from the original manufacturer or authorized distributors?
All IRLR3105PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3105PBF meets industry standards.
7.What is the process for return or replacement of IRLR3105PBF?
All IRLR3105PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3105PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR3105PBF part is unused and in its original packaging.
Return procedure for IRLR3105PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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