Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3110ZPBF

Name: IRLR3110ZPBF
Brand: Infineon Technologies
SKU: IRLR3110ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLR3110ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3110ZPBF.pdf

Description:: MOSFET N-CH 100V 42A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,211

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLR3110ZPBF from Infineon Technologies is a 100V, 63A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, featuring 14 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 250 mJ - designed for industrial DC-DC converters, motor drives, and high-current switching power supplies.

For engineers reviewing the IRLR3110ZPBF datasheet, IRLR3110ZPBF pinout, IRLR3110ZPBF application, or IRLR3110ZPBF equivalent, key selection criteria include its low conduction loss at 4.5V gate drive, fast switching (t_r = 110 ns, t_f = 48 ns), body diode recovery performance (Q_rr = 42–63 nC), and robust thermal capability under sustained industrial load conditions.

Technical Context

This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining high avalanche ruggedness. Its gate threshold voltage (1.0–2.5 V) enables reliable 4.5V logic-level drive, and the integral body diode supports synchronous rectification and freewheeling in hard-switched topologies.

The device's thermal design centers on low R_θJC = 1.05°C/W and R_θJA = 40°C/W (PCB mount), enabling high-power operation without forced air cooling. Repetitive avalanche capability is validated up to T_jmax, with E_AR = 150 mJ at 1% duty cycle and T_j = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48V industrial bus and 24V/36V motor control systems.
R_DS(on) @ V_GS = 10 V	14 mΩ max - Delivers ≤9.8 W conduction loss at 35 A continuous current, minimizing heatsink requirements.
I_D @ T_C = 25°C	63 A - Silicon-limited continuous drain current enables high-current single-device solutions in compact layouts.
Q_g	48 nC max - Enables efficient gate driving with standard 1–2 A peak gate drivers; Miller charge Q_gd = 15 nC reduces switching losses.
E_AS	250 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients in relay/motor driver circuits.
T_J max	175°C - Extended junction temperature range supports operation in sealed enclosures or high-ambient environments without derating.
trr / Qrr	34–51 ns / 42–63 nC - Fast, low-charge body diode recovery minimizes cross-conduction loss in half-bridge configurations.

Pinout & Package

IRLR3110ZPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement and mechanical stability. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain connected to the large copper tab for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input terminal	Receives gate drive signal; threshold voltage 1.0–2.5 V enables direct microcontroller-level drive at 4.5 V.
D (Drain)	High-side power switch node	Connected to PCB copper pour for thermal dissipation; carries full load current and withstands 100 V blocking.
S (Source)	Reference and return path	Provides ground reference for gate drive; internal source inductance LS = 7.5 nH affects switching waveform integrity.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	14 mΩ at 10 V gate drive - Reduces conduction loss by >35% vs. legacy 100V MOSFETs in same package, improving system efficiency at 20–50 A loads.
175°C junction rating	Rated for continuous operation up to 175°C - Eliminates need for thermal derating in enclosed industrial cabinets operating at 85°C ambient.
Fast switching speed	t_r = 110 ns, t_f = 48 ns - Supports >200 kHz PWM frequencies in SMPS designs while limiting switching loss contribution.
Repetitive avalanche capability	E_AR = 150 mJ at 1% duty cycle - Enables reliable unclamped inductive switching in solenoid and brushless DC motor gate drivers.
Low gate charge	Q_g = 48 nC, Q_gd = 15 nC - Minimizes gate driver power consumption and improves dv/dt immunity during hard commutation.

Applications

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge inverter stage for 24–48V BLDC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 30–50 A peak phase current with 20 kHz PWM.

Use Value: Low R_DS(on) and fast body diode recovery reduce conduction and commutation losses, extending MOSFET lifetime under thermal cycling.

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom DC-DC module.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes in forward or LLC topology.

Use Value: 14 mΩ R_DS(on) cuts conduction loss by ~60% vs. 40V Schottky, improving full-load efficiency from 92% to 94.5%.

Uninterruptible Power Supplies

Industrial Solenoid Drivers

Use Scenario: Battery charging/discharge switching in 48V UPS systems with active current limiting.

IC Role / Device Role / Timing Role: Bidirectional power switch managing charge current up to 60 A and reverse discharge paths.

Use Value: 175°C rating and 250 mJ E_AS ensure safe operation during battery short-circuit events without thermal runaway.

Use Scenario: High-current pulse driver for hydraulic valve solenoids requiring 50 A for 100 ms bursts.

IC Role / Device Role / Timing Role: Unclamped inductive switch with controlled avalanche energy absorption.

Use Value: Validated repetitive avalanche performance eliminates need for external snubbers, reducing BOM count and board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 11.5 mΩ (lower), but T_Jmax = 150°C and no published repetitive avalanche rating.	Better conduction loss, but unsuitable for unclamped inductive loads without external protection.	Select when thermal margin is ample and avalanche stress is absent; avoid in solenoid/motor freewheeling.
IXTH110N10L2	R_DS(on) = 12.5 mΩ, Q_g = 62 nC (higher), and T_Jmax = 175°C with full avalanche characterization.	Higher gate charge increases driver complexity; superior ruggedness for harsh industrial transients.	Prefer when system-level surge immunity and long-term reliability outweigh gate drive simplicity.

Compared with STP110N10F7 and IXTH110N10L2, IRLR3110ZPBF offers balanced trade-offs: lower Q_g than IXTH110N10L2 for simpler gate drive, and verified repetitive avalanche capability missing in STP110N10F7 - making it optimal for cost-sensitive industrial inverters requiring both efficiency and ruggedness.

Availability

IRLR3110ZPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRLR3110ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, headquartered in Munich, Germany.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial switching applications where thermal resilience, avalanche tolerance, and low on-resistance are critical.

FAQ

Is IRLR3110ZPBF suitable for 4.5V gate drive in microcontroller-based designs?

Yes. With a gate threshold voltage of 1.0–2.5 V and guaranteed R_DS(on) ≤16 mΩ at V_GS = 4.5 V, the IRLR3110ZPBF is fully logic-level compatible. It delivers 32 A continuous current at 4.5 V drive, making it ideal for direct GPIO or low-voltage gate driver use in PLC I/O modules and embedded motor controllers.

What is the maximum recommended PCB copper area for thermal performance?

For optimal thermal performance, Infineon recommends ≥200 mm² of 2-oz copper connected to the drain pad via ≥6 thermal vias (0.3 mm diameter). This achieves the specified R_θJA = 40°C/W. Smaller pads increase junction temperature by ~15°C per 50 mm² reduction, directly impacting safe operating area limits.

Does the body diode support synchronous rectification in buck converters?

Yes. The body diode has t_rr = 34–51 ns and Q_rr = 42–63 nC at I_F = 38 A, enabling effective synchronous rectification in 100–300 kHz buck converters. However, external Schottky diodes may still be preferred for <100 kHz operation due to lower forward voltage drop at light loads.

How does repetitive avalanche performance compare to single-pulse rating?

IRLR3110ZPBF is rated for 250 mJ single-pulse avalanche energy and 150 mJ repetitive avalanche energy at 1% duty cycle and T_j = 25°C. Repetitive capability drops linearly with increasing junction temperature - at T_j = 125°C, EAR falls to ~60 mJ - requiring careful thermal management in cyclic inductive switching applications.

IRLR3110ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3980 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3110ZPBF FAQ

1.How can I place an order for IRLR3110ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3110ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3110ZPBF reliable?

The price and inventory of IRLR3110ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3110ZPBF is usually 5 days.

3.What payment methods are accepted for IRLR3110ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3110ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3110ZPBF?

IRLR3110ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3110ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3110ZPBF?

For technical support, including IRLR3110ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3110ZPBF requirements.

6.How does Aetrix verify that IRLR3110ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3110ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3110ZPBF meets industry standards.

7.What is the process for return or replacement of IRLR3110ZPBF?

All IRLR3110ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3110ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3110ZPBF part is unused and in its original packaging.

Return procedure for IRLR3110ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…