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Infineon Technologies IRLR3110ZTRRPBF
- Part No.:
- IRLR3110ZTRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR3110ZTRRPBF.pdf
- Description:
- MOSFET N-CH 100V 42A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,960
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Product details
Overview
IRLR3110ZTRRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 100 V VDSS, 14 mΩ RDS(on) at VGS = 10 V, 63 A continuous drain current at TC = 25°C, and 175°C maximum junction temperature - designed for high-efficiency industrial DC-DC converters, motor drives, and uninterruptible power supplies.
For engineers reviewing the IRLR3110ZTRRPBF datasheet, IRLR3110ZTRRPBF pinout, IRLR3110ZTRRPBF application, or IRLR3110ZTRRPBF equivalent, key selection criteria include its ultra-low on-resistance, fast switching (tr = 110 ns, tf = 48 ns), robust repetitive avalanche rating (EAS = 250 mJ), and thermal reliability up to 175°C junction operation.
Technical Context
This MOSFET employs advanced planar silicon processing to minimize conduction losses while maintaining ruggedness under hard-switching and unclamped inductive load conditions. Its gate threshold voltage (1.0–2.5 V) enables 4.5 V logic-level drive compatibility, and the integrated body diode supports synchronous rectification with trr = 34–51 ns and Qrr = 42–63 nC.
The device's thermal design centers on low RθJC = 1.05°C/W and RθJA = 40°C/W (PCB mount), enabling high-power density layouts. Its safe operating area (SOA) is defined up to 100 µs pulse width at 175°C, with avalanche energy validated per AN-1005 test methodology.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage before breakdown, suitable for 48 V industrial bus systems. |
| RDS(on) | 14 mΩ max @ VGS = 10 V - Enables <1 W conduction loss at 63 A, critical for high-current power stages. |
| ID (continuous) | 63 A @ TC = 25°C - Supports high-output current in motor control and UPS inverters without forced cooling. |
| tr/tf | 110 ns / 48 ns - Fast edge rates reduce switching losses in 100–500 kHz SMPS designs. |
| EAS | 250 mJ - Validated single-pulse avalanche energy ensures reliability during inductive turn-off transients. |
| TJ max | 175°C - Allows operation in sealed enclosures or high-ambient environments without derating. |
| Qg | 48 nC max - Determines gate driver strength requirement; compatible with standard 1–2 A peak drivers. |
Pinout & Package
IRLR3110ZTRRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal performance. The three-terminal configuration supports high-current PCB routing and efficient heatsinking via the drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output terminal | Connected to exposed metal tab; carries full load current and serves as primary thermal path to PCB copper. |
| Source (S) | Reference node for gate drive and current return | Low-inductance connection point (LS = 7.5 nH); critical for minimizing shoot-through risk in half-bridge layouts. |
| Gate (G) | Control input for channel conduction | High-impedance MOS gate requiring <48 nC charge; sensitive to ESD but compatible with 3.3/5/12 V logic-level drivers. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 14 mΩ at 10 V gate drive reduces I²R losses by >30% vs. legacy 20 mΩ MOSFETs in 48 V battery systems. |
| 175°C junction rating | Enables uninterrupted operation in industrial cabinets exceeding 85°C ambient without thermal shutdown. |
| Repetitive avalanche capability | Rated for repeated unclamped inductive switching events up to TJmax, eliminating need for external snubbers in relay/motor drive circuits. |
| Fast body diode recovery | trr = 34 ns and Qrr = 42 nC minimize reverse recovery losses in synchronous buck and LLC topologies. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 3-phase inverter stage driving 1–5 kW AC induction motors in factory automation systems. IC Role / Device Role: High-side/low-side switching element in IGBT replacement topology, handling 63 A continuous phase current. Use Value: Low RDS(on) and 175°C rating sustain full-load operation in enclosed motor control cabinets without airflow. |
Use Scenario: Bidirectional DC-DC stage in online double-conversion UPS, managing battery charge/discharge and line regulation. IC Role / Device Role: Primary switch in synchronous rectifier and battery isolation circuit, operating at 100–200 kHz. Use Value: Fast switching and low Qg enable >97% efficiency at 48 V input; avalanche rating protects against bus overvoltage during grid faults. |
| DC-DC Converters for Telecom | Electric Vehicle Auxiliary Power Modules |
Use Scenario: 48 V-to-12 V intermediate bus converter in telecom base station power shelves. IC Role / Device Role: Primary-side MOSFET in phase-shifted full-bridge topology, switching at 200 kHz with ZVS. Use Value: Low Coss (310 pF) and Crss (130 pF) reduce capacitive losses and improve ZVS range across load conditions. |
Use Scenario: 12 V auxiliary power supply converting HV battery (up to 450 V) to low-voltage rail for infotainment and ADAS sensors. IC Role / Device Role: Isolation-stage switch in flyback or active clamp forward converter, rated for 100 V secondary-side operation. Use Value: Robust SOA and 250 mJ EAS withstand transient overloads from load dump or cold-crank events in automotive-grade designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N10F7 | RDS(on) = 11.5 mΩ (lower), but VDSS = 100 V same; Qg = 52 nC (higher); TJmax = 175°C same. | Better conduction loss, but higher gate drive demand and no published repetitive avalanche rating. | Prefer when gate drive strength ≥2 A is available and avalanche stress is absent. |
| IXTP110N10T | RDS(on) = 12.5 mΩ; VDSS = 100 V; Qg = 45 nC; TJmax = 175°C; TO-220 package (not surface-mount). | Same electrical specs but through-hole mounting limits board density and thermal coupling to PCB. | Select only if manual assembly or legacy TO-220 footprint is required; not drop-in for D-Pak layout. |
Compared with STP110N10F7 and IXTP110N10T, IRLR3110ZTRRPBF offers optimal balance of low gate charge, surface-mount thermal performance, and validated repetitive avalanche - making it preferred for automated, high-reliability industrial power modules where space and ruggedness are constrained.
Availability
IRLR3110ZTRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and telecom DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRLR3110ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature industrial switching applications where efficiency, ruggedness, and long-term reliability are non-negotiable.
FAQ
Is IRLR3110ZTRRPBF suitable for 4.5 V logic-level gate drive?
Yes. With VGS(th) ranging from 1.0 V to 2.5 V and RDS(on) = 16 mΩ max at VGS = 4.5 V, it delivers usable on-resistance for 3.3 V/5 V microcontroller outputs. However, full 14 mΩ performance requires 10 V drive, so gate boosting may be needed in low-voltage systems.
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies continuous drain current derating begins at TC = 25°C, with 45 A allowed at TC = 100°C. The absolute maximum case temperature is not explicitly limited, but junction temperature must stay ≤175°C. Using RθJC = 1.05°C/W, TC must remain ≤150°C for 63 A operation.
Does IRLR3110ZTRRPBF have a qualified AEC-Q101 rating for automotive use?
No. While rated for 175°C operation and used in some automotive auxiliary modules, IRLR3110ZTRRPBF is not AEC-Q101 qualified. It lacks the extended temperature cycling, humidity testing, and failure analysis required for automotive safety-critical applications.
Can this MOSFET replace IRLR3110ZPbF in existing designs?
Yes. IRLR3110ZTRRPBF is the tape-and-reel packaging variant of IRLR3110ZPbF, sharing identical electrical specifications, thermal characteristics, and D-Pak mechanical dimensions. No layout or firmware changes are required for substitution.
IRLR3110ZTRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3980 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR3110ZTRRPBF FAQ
1.How can I place an order for IRLR3110ZTRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR3110ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR3110ZTRRPBF reliable?
The price and inventory of IRLR3110ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3110ZTRRPBF is usually 5 days.
3.What payment methods are accepted for IRLR3110ZTRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3110ZTRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR3110ZTRRPBF?
IRLR3110ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR3110ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR3110ZTRRPBF?
For technical support, including IRLR3110ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3110ZTRRPBF requirements.
6.How does Aetrix verify that IRLR3110ZTRRPBF is sourced from the original manufacturer or authorized distributors?
All IRLR3110ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3110ZTRRPBF meets industry standards.
7.What is the process for return or replacement of IRLR3110ZTRRPBF?
All IRLR3110ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3110ZTRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR3110ZTRRPBF part is unused and in its original packaging.
Return procedure for IRLR3110ZTRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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