Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3114ZPBF

Name: IRLR3114ZPBF
Brand: Infineon Technologies
SKU: IRLR3114ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLR3114ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3114ZPBF.pdf

Description:: MOSFET N-CH 40V 42A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,589

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLR3114ZPBF from Infineon Technologies is a logic-level N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 40V V_DSS, 4.9mΩ R_DS(on) at V_GS = 10V, and 130A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, fast switching (t_d(on) = 25ns, t_f = 50ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters, motor drives, and synchronous rectification.

For engineers reviewing the IRLR3114ZPBF datasheet, IRLR3114ZPBF pinout, IRLR3114ZPBF application, or IRLR3114ZPBF equivalent, key selection criteria include its low R_DS(on) at 4.5V gate drive, body diode Q_rr = 27–41nC, thermal resistance R_θJC = 1.05°C/W, and SOA-limited pulse current handling up to 500A.

Technical Context

This MOSFET employs advanced HEXFET® silicon processing to minimize conduction loss while maintaining robust switching performance. Its gate threshold voltage (V_GS(th)) ranges 1.0–2.5V, enabling direct drive from 3.3V/5V logic controllers without level-shifting. The device integrates a fast, low-Q_rr body diode with t_rr = 30–45ns and V_SD ≤ 1.3V at 42A, supporting synchronous rectifier operation in buck converters.

Thermal design is supported by a low R_θJC of 1.05°C/W and validated safe operating area (SOA) up to 10ms at 42A/20V. Repetitive avalanche energy (E_AR) is specified up to 140mJ at T_J = 25°C, with derating per junction temperature per Figure 16.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage before avalanche; defines upper limit for input rail in 12V/24V systems.
R_DS(on) @ V_GS = 10V	4.9mΩ max - Conduction loss of ≤2.0W at 20A, critical for thermal management in high-current switches.
I_D Continuous @ T_C = 25°C	130A - Sustained current capability with heatsink; limited by package thermal resistance, not silicon.
Q_g Total Gate Charge	56nC max - Determines driver strength requirement; enables <1µs turn-on with 60mA average gate current.
t_f Fall Time	50ns - Fast voltage transition reduces switching loss during turn-off; supports >500kHz PWM operation.
E_AS Single-Pulse Avalanche	500mJ - Energy-handling capacity under unclamped inductive switching; validates robustness in motor control faults.
V_GS(th)	1.0–2.5V - Ensures full enhancement at 3.3V logic levels; eliminates need for gate boosters in microcontroller-driven designs.

Pinout & Package

IRLR3114ZPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package has three terminals: Source (S), Drain (D), and Gate (G), arranged in standard D-Pak footprint (lead pitch 2.54mm, body size 6.73 × 6.22 mm).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current output terminal, electrically connected to exposed copper pad	Primary heat path to PCB; must be soldered to large copper pour for R_θJC = 1.05°C/W performance.
Source (S)	Reference node for gate drive and current return path	Low-inductance source loop critical for minimizing V_GS ringing; internal L_S = 7.5nH.
Gate (G)	Control electrode for channel modulation	High-impedance input requiring <100nA leakage; sensitive to ESD-requires series resistor (3.7Ω typical) per Fig.18a.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9mΩ @ 10V enables <1W conduction loss at 14A, reducing heatsink requirements in 48V telecom PSUs.
Logic-level gate drive	V_GS(th) ≤ 2.5V ensures full enhancement with 3.3V MCU GPIO, eliminating external level shifters in battery-powered motor drivers.
Repetitive avalanche rated	Rated for repeated E_AR up to 140mJ-supports reliable operation in inductive load switching without snubbers.
Fast body diode	Q_rr = 27–41nC and t_rr = 30–45ns reduce reverse recovery loss in synchronous rectifiers and LLC resonant converters.

Applications

DC-DC Buck Converter

Brushless DC Motor Driver

Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load converter in networking equipment.

IC Role / Device Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >95% efficiency at 20A output due to 4.9mΩ R_DS(on) and low Q_rr body diode.

Use Scenario: Low-voltage (<40V) 3-phase BLDC inverter for power tools and e-bikes.

IC Role / Device Role: High-side and low-side power switch in half-bridge leg.

Use Value: 130A continuous rating and 175°C T_J support burst-mode torque delivery without thermal throttling.

Automotive Body Control Module

Industrial Solenoid Driver

Use Scenario: Load switching for headlights, fans, and relays in 12V vehicle subsystems.

IC Role / Device Role: Protected high-side switch with integrated avalanche energy handling.

Use Value: Withstands 500mJ single-pulse avalanche, eliminating need for external TVS in inductive load transients.

Use Scenario: 24V solenoid actuation in factory automation valves and pneumatic controls.

IC Role / Device Role: Low-R_DS(on) switching element driving 10A steady-state solenoid coils.

Use Value: 4.9mΩ on-resistance limits self-heating to <0.5°C/W rise at 10A, enabling compact PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3110ZPBF	V_DSS = 40V, R_DS(on) = 7.0mΩ @ 10V - higher conduction loss, lower cost	Lower current density; suitable for ≤80A continuous designs where thermal margin exists	Select when board space allows larger heatsink or when peak efficiency is secondary to BOM cost
STL325N4L10AG	V_DSS = 40V, R_DS(on) = 3.8mΩ @ 4.5V - lower gate threshold, better 3.3V drive margin	Optimized for ultra-low-voltage gate drive; requires tighter layout for 1.2nH L_S	Select when driving directly from 3.3V microcontrollers without gate buffers and minimal PCB parasitics

Compared with IRLR3114ZPBF, the IRLR3110ZPBF trades 43% higher R_DS(on) for lower unit cost, while STL325N4L10AG improves gate drive compatibility at 3.3V but demands stricter layout control to avoid oscillation.

Availability

IRLR3114ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, automotive body electronics, and industrial solenoid control requiring stable component supply across production lifecycles.

Supply support for IRLR3114ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

The IRLR3114ZPBF belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained and thermally demanding applications such as server VRMs and portable power tools.

FAQ

What is the maximum continuous drain current for IRLR3114ZPBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 89A with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package-not silicon current capability-and assumes proper PCB copper area for heat spreading.

Does IRLR3114ZPBF support gate drive from a 3.3V microcontroller without external boosting?

Yes. With V_GS(th) as low as 1.0V and guaranteed R_DS(on) ≤ 6.5mΩ at V_GS = 4.5V, the device fully enhances using standard 3.3V GPIO. However, switching speed will be reduced versus 10V drive-t_d(on) increases ~2.5× and Q_g effective charge rises due to lower transconductance.

How is the body diode performance characterized in IRLR3114ZPBF?

The integrated body diode has V_SD ≤ 1.3V at 42A and 25°C, reverse recovery time t_rr = 30–45ns, and Q_rr = 27–41nC. These values are measured with di/dt = 100A/µs and V_DD = 20V, making it suitable for synchronous rectification in high-frequency buck converters.

Can IRLR3114ZPBF be used in parallel configurations for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) (see Fig.10) ensures inherent current sharing. For stable paralleling, match gate drive impedance, minimize source inductance imbalance (<1nH difference), and use Kelvin-source connections. Thermal coupling via shared heatsink further improves balance.

IRLR3114ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3114ZPBF FAQ

1.How can I place an order for IRLR3114ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3114ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3114ZPBF reliable?

The price and inventory of IRLR3114ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3114ZPBF is usually 5 days.

3.What payment methods are accepted for IRLR3114ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3114ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3114ZPBF?

IRLR3114ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3114ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3114ZPBF?

For technical support, including IRLR3114ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3114ZPBF requirements.

6.How does Aetrix verify that IRLR3114ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3114ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3114ZPBF meets industry standards.

7.What is the process for return or replacement of IRLR3114ZPBF?

All IRLR3114ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3114ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3114ZPBF part is unused and in its original packaging.

Return procedure for IRLR3114ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…