Infineon Technologies IRLR3303PBF

Overview

IRLR3303PBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel Power MOSFET in D-Pak (TO-252AA) package, rated for 30 V V(BR)DSS, 35 A continuous drain current at 25°C, and 0.031 Ω RDS(on) at VGS = 10 V. It features ultra-low on-resistance, fast switching, full avalanche rating, and lead-free construction-designed for high-efficiency DC-DC converters, motor drives, and load-switching applications.

For engineers reviewing the IRLR3303PBF datasheet, IRLR3303PBF pinout, IRLR3303PBF application, or IRLR3303PBF equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 130 mJ single-pulse avalanche energy, 26 nC total gate charge, thermal resistance of 2.2 °C/W (junction-to-case), and surface-mount D-Pak footprint optimized for PCB power delivery integrity.

Technical Context

This HEXFET device uses fifth-generation silicon process technology to minimize RDS(on) per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (VGS(th)) of 1.0–2.5 V enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting.

The integrated body diode exhibits 72–110 ns reverse recovery time and 180–280 nC Qrr under 20 A IF and 100 A/µs di/dt, supporting synchronous rectification and freewheeling in buck and half-bridge topologies where diode conduction loss and switching noise must be tightly controlled.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain tab for thermal and electrical connection. Three-terminal configuration: Drain (Tab), Source (Pin 1), Gate (Pin 2). Pin 3 is unused (thermal pad only).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power MOSFET applications.

Compared with IRLR3303PBF, IRLR3705ZPBF offers lower on-resistance at the cost of higher gate charge (33 nC), while STP36NF06L trades surface-mount convenience for higher voltage rating and inferior thermal performance-making IRLR3303PBF optimal for space-constrained 24 V logic-driven switching.

Availability

IRLR3303PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor controllers, hot-swap circuits, and LED drivers requiring stable component supply across industrial, automotive, and embedded OEM programs.

Supply support for IRLR3303PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The IRLRxxx logic-level HEXFET family was engineered specifically for direct-drive efficiency in 3.3 V/5 V microcontroller-based power stages-emphasizing low gate charge, fast switching, and rugged avalanche tolerance in compact surface-mount packages.

FAQ

What is the maximum safe operating junction temperature for IRLR3303PBF?

The absolute maximum junction temperature is +175°C, and the device is characterized across –55°C to +175°C. Thermal design must ensure TJ remains below this limit under worst-case power dissipation and ambient conditions, using RθJC = 2.2°C/W and verified PCB copper area.

Can IRLR3303PBF be used with 3.3 V microcontroller GPIOs without a gate driver?

Yes-its VGS(th) range of 1.0–2.5 V and guaranteed enhancement at VGS = 4.5 V allow reliable turn-on with 3.3 V logic, though RDS(on) rises to 0.045 Ω. For <10 A loads and moderate switching frequency, direct drive is viable with proper gate routing and decoupling.

Is the drain tab electrically isolated from the PCB mounting pad?

No-the drain (tab) is internally connected to the MOSFET's drain terminal and must be soldered to a PCB copper pour designated as the drain net. Electrical isolation requires insulating thermal pads or standoff hardware, which degrades thermal performance significantly.

Does IRLR3303PBF have built-in ESD protection on the gate?

No-this discrete MOSFET lacks integrated gate protection diodes. External 10 kΩ gate-to-source resistor and careful PCB layout (short traces, ground guard ring) are mandatory to prevent ESD damage during handling and assembly, per JEDEC JS-001 Class 2A (2 kV HBM) qualification.