Infineon Technologies IRLR3303TRLPBF
- Part No.:
- IRLR3303TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR3303TRLPBF.pdf
- Description:
- MOSFET N-CH 30V 35A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,600
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Product details
Overview
IRLR3303TRLPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 35A logic-level N-channel Power MOSFET in TO-252AA (D-Pak) surface-mount package, featuring 31 mΩ RDS(on) at VGS = 10 V and 45 mΩ at VGS = 4.5 V, fully avalanche-rated, and optimized for DC-DC converters, motor drives, and load switching in industrial power supplies.
For engineers reviewing the IRLR3303TRLPBF datasheet, IRLR3303TRLPBF pinout, IRLR3303TRLPBF application, or IRLR3303TRLPBF equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.5 V), low RDS(on) at 4.5 V, fast switching (tr = 200 ns, tf = 36 ns), and rugged unclamped inductive switching capability (EAS = 130 mJ).
Technical Context
This HEXFET device uses fifth-generation silicon process technology to minimize conduction loss while maintaining high dv/dt immunity (5.0 V/ns) and robust body diode performance (trr = 72–110 ns, Qrr = 180–280 nC). Its gate charge profile (Qg = 26 nC, Qgd = 15 nC) supports efficient PWM operation in synchronous buck stages.
The MOSFET integrates low-inductance internal source (LS = 7.5 nH) and drain (LD = 4.5 nH) paths, enabling clean switching waveforms under high di/dt conditions (up to 140 A/µs). Thermal design is supported by validated junction-to-case resistance of 2.2 °C/W and PCB-mounted junction-to-ambient rating of 50 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage; suitable for 24 V nominal bus systems with margin. |
| RDS(on) @ VGS = 4.5 V | 45 mΩ - Enables efficient operation directly from 3.3 V or 5 V logic-level drivers without level-shifting. |
| ID @ TC = 25°C | 35 A - Continuous current rating at heatsink temperature; limited to 20 A by package thermal constraint. |
| EAS | 130 mJ - Single-pulse avalanche energy; supports reliable unclamped inductive turn-off in motor control. |
| Qg | 26 nC - Total gate charge; determines driver power requirement and switching loss trade-off. |
| tr/tf | 200/36 ns - Rise/fall times at VDD = 15 V, ID = 20 A; enables >500 kHz switching in SMPS designs. |
| θJC | 2.2 °C/W - Junction-to-case thermal resistance; defines minimum heatsink interface requirement for thermal management. |
Pinout & Package
IRLR3303TRLPBF is housed in a TO-252AA (D-Pak) surface-mount package with gull-wing leads, designed for vapor-phase, infrared, or wave soldering. The package provides low thermal resistance and mechanical robustness for high-power density board layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path and gate reference | Connected to PCB ground plane; carries full load current and serves as gate drive reference point. |
| Pin 2 (Gate) | Control input terminal | High-impedance node requiring low-inductance routing; driven by logic-level or dedicated gate driver IC. |
| Pin 3 (Drain) | Main power output terminal | Connected to switched high-side rail; electrically tied to die backside (exposed pad) for thermal conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.0–2.5 V ensures full enhancement with 3.3 V or 5 V microcontroller outputs. |
| Fully avalanche-rated | Rated for repetitive and single-pulse avalanche events up to EAR = 6.8 mJ and EAS = 130 mJ. |
| Ultra-low RDS(on) | 31 mΩ @ 10 V and 45 mΩ @ 4.5 V reduce conduction losses in high-current, low-voltage applications. |
| Fast body diode | trr = 72–110 ns and Qrr = 180–280 nC minimize reverse recovery loss in synchronous rectification. |
| Lead-free and RoHS-compliant | "PBF" suffix confirms Pb-free terminations and compliance with EU RoHS Directive 2011/65/EU. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 24 V input to 5/3.3 V output conversion in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–600 kHz with logic-level gate control. Use Value: 45 mΩ RDS(on) at 4.5 V reduces conduction loss by >30% vs. standard MOSFETs, improving full-load efficiency above 92%. | Use Scenario: H-bridge drive for 12–24 V brushed motors in automated gate actuators and HVAC dampers. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 20 A peak currents with fast PWM commutation. Use Value: 130 mJ EAS withstands inductive kickback during rapid direction reversal without snubbers or clamps. |
| Hot-Swap Controller | LED Constant-Current Driver |
Use Scenario: Inrush current limiting and fault protection in redundant 24 V power distribution units. IC Role / Device Role / Timing Role: Series pass element controlled by external current-sense amplifier and comparator. Use Value: 35 A continuous rating and 140 A pulsed capability support 20 A steady-state loads with 2× surge margin. | Use Scenario: Dimmable constant-current driver for high-brightness LED arrays in signage and architectural lighting. IC Role / Device Role / Timing Role: PWM-controlled current sink switching at 1–5 kHz with analog dimming feedback. Use Value: Low Qg (26 nC) and fast tf (36 ns) enable precise current regulation with minimal switching noise coupling into analog feedback. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3103TRLPBF | RDS(on) = 55 mΩ @ 4.5 V; lower ID (30 A); identical package and pinout | Higher conduction loss limits use in >15 A continuous applications | Select when cost sensitivity outweighs efficiency requirements and thermal headroom exists |
| STP36NF06L | 60 V VDSS; RDS(on) = 20 mΩ @ 10 V but 50 mΩ @ 4.5 V; TO-220 package | Higher voltage rating but through-hole mounting and higher gate charge (45 nC) | Choose only if 60 V blocking is required and PCB layout allows TO-220 footprint |
Compared with IRLR3103TRLPBF and STP36NF06L, the IRLR3303TRLPBF delivers optimal balance of low 4.5 V RDS(on), surface-mount D-Pak packaging, and proven avalanche ruggedness-making it preferred for space-constrained, high-reliability 24 V industrial power stages.
Availability
IRLR3303TRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and LED drivers requiring stable component supply across extended production lifecycles.
Supply support for IRLR3303TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.
This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control applications.
FAQ
Is IRLR3303TRLPBF suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage (VGS(th)) of 1.0–2.5 V and guaranteed RDS(on) of 45 mΩ at VGS = 4.5 V, the device fully enhances using standard 3.3 V GPIO outputs. For optimal performance, a dedicated gate driver is recommended to achieve fast switching and minimize Miller-induced shoot-through.
What is the maximum continuous current at 100°C case temperature?
The datasheet specifies ID = 25 A at TC = 100°C with VGS = 10 V. This derating reflects thermal limits-not package current capacity, which is capped at 20 A regardless of temperature. Designers must verify PCB copper area and heatsinking to maintain TC ≤ 100°C under load.
Does IRLR3303TRLPBF have integrated ESD protection?
No. The device lacks on-die ESD protection structures. External gate protection-such as a 10 kΩ series resistor and 12 V Zener clamp between gate and source-is strongly recommended to prevent damage during handling or system-level transients.
Can IRLR3303TRLPBF replace IRLR3303PBF in existing designs?
Yes. The "TRLPBF" suffix denotes tape-and-reel packaging with lead-free terminations, while "PBF" indicates bulk packaging with identical electrical and thermal specifications. No layout or circuit changes are needed-only logistics and assembly process adjustments for reel-fed pick-and-place.
IRLR3303TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 870 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR3303TRLPBF FAQ
1.How can I place an order for IRLR3303TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR3303TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR3303TRLPBF reliable?
The price and inventory of IRLR3303TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3303TRLPBF is usually 5 days.
3.What payment methods are accepted for IRLR3303TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3303TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR3303TRLPBF?
IRLR3303TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR3303TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR3303TRLPBF?
For technical support, including IRLR3303TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3303TRLPBF requirements.
6.How does Aetrix verify that IRLR3303TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRLR3303TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3303TRLPBF meets industry standards.
7.What is the process for return or replacement of IRLR3303TRLPBF?
All IRLR3303TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3303TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR3303TRLPBF part is unused and in its original packaging.
Return procedure for IRLR3303TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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