Infineon Technologies IRLR3303TRPBF

Overview

IRLR3303TRPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel Power MOSFET in D-Pak (TO-252AA) package, rated for 30 V V(BR)DSS, 35 A continuous drain current at 25°C, and 0.031 Ω RDS(on) at VGS = 10 V. It features ultra-low on-resistance, fast switching, full avalanche rating, and lead-free construction-designed for high-efficiency DC-DC converters, motor drives, and load-switching applications.

For engineers reviewing the IRLR3303TRPBF datasheet, IRLR3303TRPBF pinout, IRLR3303TRPBF application, or IRLR3303TRPBF equivalent, key selection criteria include gate threshold voltage (1.0–2.5 V), thermal resistance (RθJC = 2.2 °C/W), body diode recovery performance (trr = 72–110 ns), and logic-level drive compatibility with 4.5 V microcontrollers.

Technical Context

This HEXFET device uses fifth-generation silicon process technology to minimize RDS(on) per die area while maintaining rugged unclamped inductive switching capability (EAS = 130 mJ). Its low gate charge (Qg = 26 nC) and optimized capacitance profile (Ciss = 870 pF, Crss = 170 pF) support high-frequency operation up to several hundred kHz in synchronous buck topologies.

The integrated body diode exhibits controlled reverse recovery (Qrr = 180–280 nC, trr = 72–110 ns) and forward voltage (VSD = 1.3 V at IS = 20 A), enabling reliable freewheeling in hard-switched converters without external Schottky supplementation in moderate-power designs.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain tab for thermal and electrical connection. Standard three-terminal configuration: Gate (G), Drain (D), Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLR3103TRPBF and STL32N3LLH6, the IRLR3303TRPBF delivers optimal balance of 35 A current capacity, 0.031 Ω RDS(on) at 10 V, and D-Pak thermal performance-making it preferred for thermally demanding, medium-power industrial switching where layout reuse and proven reliability are priorities.

Availability

IRLR3303TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and LED drivers requiring stable component supply across extended production lifecycles.

Supply support for IRLR3303TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous automotive and industrial qualification standards.

The HEXFET® Power MOSFET product line-now part of Infineon's StrongIRFET™ family-is engineered for high-efficiency, high-reliability switching in industrial motor controls, server power supplies, and renewable energy inverters.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The IRLR3303TRPBF has a TJ(max) of +175°C. At TC = 100°C, its continuous drain current drops to 25 A due to thermal derating (0.45 W/°C). This means sustained operation above 100°C case temperature requires active cooling or current reduction to prevent exceeding 175°C junction limit-verified by RθJC = 2.2 °C/W and power dissipation calculations.

Is the body diode suitable for freewheeling in non-synchronous buck converters?

Yes-the integrated body diode has characterized reverse recovery (trr = 72–110 ns, Qrr = 180–280 nC) and forward voltage (VSD = 1.3 V at 20 A). These parameters support stable freewheeling in 100–300 kHz non-synchronous buck stages without oscillation, though efficiency is ~3–5% lower than synchronous rectification.

Can IRLR3303TRPBF be driven directly from a 3.3 V microcontroller GPIO?

Yes-its VGS(th) range (1.0–2.5 V) and logic-level design ensure full enhancement at 3.3 V, delivering RDS(on) ≤ 0.045 Ω at VGS = 4.5 V and ID = 17 A. For best efficiency, pair with a low-impedance driver (e.g., TC4427) to minimize switching losses during 26 nC gate charge transfer.

What is the significance of the "P" suffix in IRLR3303TRPBF?

The "P" denotes lead-free (Pb-free) construction per JEDEC J-STD-020, confirmed by Infineon's material declarations. It indicates compliance with RoHS Directive 2011/65/EU and supports standard Pb-free reflow profiles (peak 260°C), with no impact on electrical or thermal specifications versus legacy leaded versions.