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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3303TRRPBF

Name: IRLR3303TRRPBF
Brand: Infineon Technologies
SKU: IRLR3303TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3303TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3303TRRPBF.pdf

Description:: MOSFET N-CH 30V 35A DPAK

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Product details

Overview

IRLR3303TRRPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 35A logic-level N-channel Power MOSFET in D-Pak (TO-252AA) package, featuring R_DS(on) = 0.031Ω @ V_GS = 10V and ultra-low gate charge (Q_g = 26nC), designed for high-efficiency DC-DC converters and synchronous rectification in server power supplies.

For engineers reviewing the IRLR3303TRRPBF datasheet, IRLR3303TRRPBF pinout, IRLR3303TRRPBF application, or IRLR3303TRRPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.5V), avalanche ruggedness (E_AS = 130mJ), thermal resistance (R_θJC = 2.2°C/W), and surface-mount D-Pak packaging for automated PCB assembly.

Technical Context

This HEXFET device uses fifth-generation silicon process technology to achieve low on-resistance per die area while maintaining fast switching (t_r = 200ns, t_f = 36ns) and robust unclamped inductive switching capability. Its body diode exhibits t_rr = 72–110ns and Q_rr = 180–280nC under 20A reverse recovery conditions.

The MOSFET supports logic-level gate drive down to 4.5V (R_DS(on) = 0.045Ω), enabling direct interface with microcontrollers and PWM controllers without level-shifting. It is fully rated for repetitive avalanche energy (E_AR = 6.8mJ) and operates across –55°C to +175°C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum drain-source blocking voltage; defines safe operating voltage ceiling in buck converter high-side or load switch applications.
R_DS(on) @ 10V	0.031Ω - Low conduction loss at standard gate drive; enables <1W conduction loss at 35A continuous current in thermally optimized layouts.
I_D @ 25°C	35A - Continuous drain current rating at case temperature 25°C; limited by package thermal resistance and PCB copper area.
Q_g	26nC - Total gate charge; determines driver strength requirement and switching loss trade-off in high-frequency (>500kHz) SMPS designs.
E_AS	130mJ - Single-pulse avalanche energy rating; ensures reliability during inductive turn-off transients without external snubbers.
R_θJC	2.2°C/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation when heatsinking the D-Pak tab to a thermal pad.
V_GS(th)	1.0–2.5V - Gate threshold voltage range; guarantees turn-on with 3.3V or 5V logic outputs, eliminating need for gate drivers in low-speed control.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain tab for thermal and electrical connection. Three terminals: Drain (Tab), Source (Pin 1), Gate (Pin 2). Pin 3 is not present - D-Pak is a 3-terminal variant of TO-252.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically and thermally connected to PCB copper pour; must be soldered to ≥100mm² 2oz copper for rated 68W dissipation.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance return path; internal source inductance L_S = 7.5nH impacts high-di/dt switching stability.
Gate (Pin 2)	Control terminal for channel modulation	Requires <26nC charge for full enhancement; Miller charge Q_gd = 15nC dominates turn-off timing and EMI behavior.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5V (R_DS(on) = 0.045Ω), compatible with 3.3V/5V microcontrollers and PWM ICs without level shifters.
Fully avalanche rated	Rated for repetitive (E_AR = 6.8mJ) and single-pulse (E_AS = 130mJ) avalanche events, enabling robust operation in inductive load switching.
Ultra-low R_DS(on)	0.031Ω @ 10V ensures <0.4W conduction loss at 12A, critical for high-current point-of-load regulators in telecom and server systems.
Fast switching performance	Turn-off delay t_d(off) = 14ns and fall time t_f = 36ns support >1MHz switching frequencies with minimized dead-time losses.
Lead-free and RoHS compliant	"PBF" suffix confirms lead-free termination and compliance with EU RoHS Directive 2011/65/EU; suitable for industrial and computing end equipment.

Applications

Server VRM Synchronous Rectifier

Industrial DC Motor Control

Use Scenario: High-current, high-efficiency synchronous rectification in 12V input, 1V/150A CPU VRMs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; switched at 300–600kHz with precise gate timing relative to high-side FET.

Use Value: Reduces conduction loss by >60% vs. 40V Schottky, lowering VRM temperature rise and improving system efficiency by 1.2–1.8% at full load.

Use Scenario: H-bridge motor driver for 24V brushed DC motors in PLC-controlled factory automation systems.

IC Role / Device Role / Timing Role: Half-bridge low-side switch; driven by isolated gate driver with 100ns propagation delay and 2A peak output.

Use Value: Withstands 140A pulsed drain current and 130mJ avalanche energy during motor stall or reversal, eliminating external clamping diodes.

Telecom DC-DC Converter

LED Driver Power Switch

Use Scenario: Primary-side switch in 48V-to-12V isolated forward converter for telecom shelf power distribution.

IC Role / Device Role / Timing Role: Main power switch operating at 250kHz with zero-voltage switching assistance; gate driven by transformer-coupled driver.

Use Value: Low Q_g (26nC) and Q_gd (15nC) minimize driver power consumption and reduce switching loss by 22% compared to legacy 40V MOSFETs.

Use Scenario: Constant-current switch in high-brightness LED string driver for outdoor signage (36V bus, 3A LED load).

IC Role / Device Role / Timing Role: PWM-controlled high-side or low-side current regulator; thermally coupled to aluminum backplate.

Use Value: R_θJC = 2.2°C/W allows direct mounting to heatsink, maintaining T_J < 125°C at 3A continuous with no forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3713TRPBF	R_DS(on) = 0.019Ω @ 10V (37% lower), but higher Q_g = 32nC and same 30V rating.	Better conduction loss at high current; less suitable for >1MHz switching due to increased gate drive demand.	Select when thermal budget is tight and switching frequency ≤500kHz; verify driver capability for 32nC charge.
SIHLR3303TRPBF	Same R_DS(on), Q_g, and package; manufactured by Vishay under license with identical electrical specs and AEC-Q101 qualification.	Approved for automotive body electronics where extended temperature validation and PPAP documentation are required.	Choose for automotive programs needing qualified supply chain; otherwise functionally interchangeable in industrial use.

Compared with IRLR3303TRRPBF, IRLR3713TRPBF improves conduction efficiency but increases switching loss and driver complexity, while SIHLR3303TRPBF offers identical performance with automotive-grade traceability-making it ideal for dual-sourcing in safety-critical systems.

Availability

IRLR3303TRRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC converters, and LED lighting systems requiring stable component supply and long-term production continuity.

Supply support for IRLR3303TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered for high-current, high-reliability power conversion in computing, industrial, and communications infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR3303TRRPBF supports 25A continuous drain current at T_C = 100°C, derated from 35A at 25°C using the linear derating factor of 0.45W/°C and package-limited thermal resistance. This value assumes adequate PCB copper area (≥200mm² 2oz) under the drain tab.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes - a 5–10Ω gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 170pF) and parasitic inductance (L_S = 7.5nH, L_D = 4.5nH). Without it, overshoot exceeding ±16V gate rating may occur during 100A/µs switching transitions.

Can the body diode be used for freewheeling in synchronous rectifier topologies?

Yes - the integrated body diode has V_SD = 1.3V at 20A and t_rr = 72–110ns, making it suitable for synchronous rectification in forward and flyback converters up to 300kHz. However, its Q_rr = 180–280nC contributes to reverse recovery loss, so optimal dead-time control is essential.

Is the D-Pak (TO-252AA) package compatible with standard reflow profiles?

Yes - the lead-free IRLR3303TRRPBF is qualified for IPC/JEDEC J-STD-020D-compliant reflow, with peak temperature of 260°C for 30 seconds max. The drain tab must be soldered using vapor phase or infrared profile with controlled ramp rates to avoid die stress or voiding in thermal pads.

IRLR3303TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3303TRRPBF FAQ

1.How can I place an order for IRLR3303TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3303TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3303TRRPBF reliable?

The price and inventory of IRLR3303TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3303TRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR3303TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3303TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3303TRRPBF?

IRLR3303TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3303TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3303TRRPBF?

For technical support, including IRLR3303TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3303TRRPBF requirements.

6.How does Aetrix verify that IRLR3303TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3303TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3303TRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR3303TRRPBF?

All IRLR3303TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3303TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3303TRRPBF part is unused and in its original packaging.

Return procedure for IRLR3303TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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