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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3410PBF

Name: IRLR3410PBF
Brand: Infineon Technologies
SKU: IRLR3410PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3410PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3410PBF.pdf

Description:: MOSFET N-CH 100V 17A DPAK

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Product details

Overview

IRLR3410PBF from Infineon Technologies is a logic-level N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 100 V V_DSS, 0.105 Ω R_DS(on) at V_GS = 10 V and I_D = 10 A, and 17 A continuous drain current at T_C = 25°C. It serves as a high-efficiency, surface-mount power switch in DC-DC converters, motor drives, and load switching applications.

For engineers reviewing the IRLR3410PBF datasheet, IRLR3410PBF pinout, IRLR3410PBF application, or IRLR3410PBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), ultra-low on-resistance, avalanche-rated ruggedness (E_AS = 150 mJ), fast switching (t_r = 53 ns), and thermal performance (R_θJC = 1.9 °C/W).

Technical Context

This MOSFET employs fifth-generation HEXFET process technology to minimize conduction losses while maintaining robust switching behavior. Its low gate charge (Q_g = 34 nC) and optimized capacitance profile (C_iss = 800 pF, C_rss = 90 pF) support high-frequency operation up to several hundred kHz in hard-switched topologies.

The integrated body diode exhibits t_rr = 140–210 ns and Q_rr = 740–1100 nC under specified conditions, enabling reliable synchronous rectification and inductive load commutation. Thermal design is supported by validated junction-to-case resistance of 1.9 °C/W and PCB-mounted R_θJA = 50 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - maximum blocking voltage before avalanche onset; suitable for 48 V bus and 100 V industrial input stages
R_DS(on)	0.105 Ω @ V_GS = 10 V, I_D = 10 A - enables <1.05 W conduction loss at 10 A, reducing heatsink requirements
I_D (continuous)	17 A @ T_C = 25°C - supports high-current loads with adequate board-level thermal management
Q_g	34 nC - determines gate driver power demand and switching transition time in PWM circuits
E_AS	150 mJ - quantifies single-pulse unclamped inductive energy handling capability without failure
t_r/t_f	53 ns / 26 ns - defines minimum practical switching period and associated switching loss envelope
R_θJC	1.9 °C/W - enables direct thermal path to heatsink via exposed drain pad; critical for power density optimization

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Three-terminal configuration: Gate (G), Drain (D), Source (S). Standard footprint per JEDEC TO-252AA outline; compatible with vapor-phase and IR reflow.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives logic-level voltage (≥4.0 V) to fully enhance channel; low input capacitance (C_iss = 800 pF) eases driver selection
D	Drain (high-side switch node)	Connected to exposed copper pad; carries full load current and provides primary thermal path to PCB/heatsink
S	Source (return path)	Reference node for gate drive; internal source inductance (L_S = 7.5 nH) affects switching waveform ringing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.0 V, eliminating need for gate boosters in 5 V or 3.3 V microcontroller-driven systems
Fully avalanche-rated	Guaranteed single-pulse E_AS = 150 mJ enables robust operation in inductive switching without external snubbers
Ultra-low R_DS(on)	0.105 Ω minimizes I²R losses at high DC currents-critical for efficiency in battery-powered and thermal-constrained designs
Fast switching speed	7.2 ns turn-on delay + 53 ns rise time allows >200 kHz PWM operation with controlled dv/dt (5.0 V/ns max)

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V input to 12 V/5 V output in telecom power supplies.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz with 50% duty cycle.

Use Value: Low R_DS(on) reduces conduction loss by >30% vs. legacy 0.18 Ω MOSFETs; Q_g = 34 nC enables efficient gate driving with TC4427-class drivers.

Use Scenario: H-bridge half-bridge leg controlling 12–24 V brushed motors in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element with bidirectional current handling via body diode during freewheeling.

Use Value: t_rr = 140 ns and Q_rr = 740 nC limit diode recovery loss and EMI; avalanche rating withstands back-EMF transients up to 100 V.

LED Constant-Current Driver

Hot-Swap Controller

Use Scenario: High-brightness LED string current regulation in architectural lighting systems.

IC Role / Device Role / Timing Role: Precision current-sense FET in linear or PWM-controlled constant-current sink topology.

Use Value: Tight V_GS(th) tolerance (1.0–2.0 V) ensures consistent turn-on across temperature; R_DS(on) stability (<±20% from –55°C to 125°C) maintains current accuracy.

Use Scenario: Inrush current limiting and fault isolation in 12 V/48 V backplane power distribution.

IC Role / Device Role / Timing Role: Load switch with controlled slew rate enabled by gate resistor tuning and low C_iss/C_rss ratio.

Use Value: Fast turn-off (t_f = 26 ns) and low Miller charge (Q_gd = 20 nC) prevent shoot-through during sequencing; R_DS(on) drift <10% over lifetime ensures stable current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF10	R_DS(on) = 0.12 Ω @ 10 V; higher Q_g = 42 nC; V_DSS = 100 V; same D-Pak	Marginally higher conduction loss and slower switching; lower avalanche rating (E_AS = 85 mJ)	Acceptable where thermal margin exists and switching frequency <100 kHz
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ 10 V but V_DSS = 55 V; TO-220 package; no logic-level drive (V_GS(th) = 2–4 V)	Not suitable for 100 V systems; requires higher gate drive voltage; incompatible pinout and thermal interface	Only viable in 24–48 V designs with through-hole assembly and gate driver headroom ≥10 V

Compared with STP16NF10 and IRFZ44NPBF, IRLR3410PBF uniquely combines 100 V rating, logic-level drive, D-Pak surface-mount compatibility, and industry-leading avalanche ruggedness-making it optimal for compact, high-reliability 48 V industrial and automotive auxiliary power systems.

Availability

IRLR3410PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and hot-swap controllers requiring stable component supply, lead-free compliance, and long-term industrial availability.

Supply support for IRLR3410PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line delivers high-voltage, high-current switching solutions optimized for efficiency, thermal performance, and ruggedness in industrial, automotive, and computing power systems.

FAQ

Is IRLR3410PBF suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) ranging from 1.0 V to 2.0 V and R_DS(on) = 0.155 Ω at V_GS = 4.0 V, the device achieves usable enhancement under 3.3 V logic. However, full conduction (R_DS(on) = 0.105 Ω) requires ≥10 V gate drive; for optimal efficiency, use a level-shifting gate driver or 5 V MCU output.

What is the maximum recommended PCB copper area for thermal performance?

Per Infineon Application Note AN-994, a 1-inch square FR-4 PCB pad (minimum 2 oz copper) achieves R_θJA = 50 °C/W. Doubling the copper area to 2×2 inches with thermal vias improves R_θJA to ~35 °C/W. The exposed drain pad must be soldered directly to this thermal plane with ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart).

Does IRLR3410PBF have built-in ESD protection?

No. The device lacks integrated gate protection diodes. External 10 kΩ gate resistor and 12 V Zener clamp between gate and source are recommended to prevent ESD damage during handling and PCB assembly, especially given its ±16 V V_GS absolute maximum rating and sensitivity to overvoltage transients.

Can IRLR3410PBF replace IRLR3705PBF in an existing design?

Not directly. While both are D-Pak logic-level N-MOSFETs, IRLR3705PBF has V_DSS = 55 V and R_DS(on) = 0.016 Ω-optimized for low-voltage, high-current use. Substituting IRLR3410PBF (100 V, 0.105 Ω) increases conduction loss by ~6.5× and may cause thermal overload unless layout and gate drive are re-validated for higher R_DS(on) and reduced current rating.

IRLR3410PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3410PBF FAQ

1.How can I place an order for IRLR3410PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3410PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3410PBF reliable?

The price and inventory of IRLR3410PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3410PBF is usually 5 days.

3.What payment methods are accepted for IRLR3410PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3410PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3410PBF?

IRLR3410PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3410PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3410PBF?

For technical support, including IRLR3410PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3410PBF requirements.

6.How does Aetrix verify that IRLR3410PBF is sourced from the original manufacturer or authorized distributors?

All IRLR3410PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3410PBF meets industry standards.

7.What is the process for return or replacement of IRLR3410PBF?

All IRLR3410PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3410PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3410PBF part is unused and in its original packaging.

Return procedure for IRLR3410PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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