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Infineon Technologies IRLR3410TRR
- Part No.:
- IRLR3410TRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR3410TRR.pdf
- Description:
- MOSFET N-CH 100V 17A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,871
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Product details
Overview
IRLR3410TRR from Infineon Technologies is a surface-mount N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, rated for 100 V VDS, 17 A continuous drain current at TC = 25 °C, and 4.8 mΩ typical RDS(on) at VGS = 10 V. It is designed for high-efficiency DC-DC converters and motor control stages in industrial power supplies.
For engineers reviewing the IRLR3410TRR datasheet, IRLR3410TRR pinout, IRLR3410TRR application, or IRLR3410TRR equivalent, key selection criteria include its low gate charge (Qg = 32 nC), fast switching capability (tf = 25 ns), and robust avalanche energy rating (EAS = 125 mJ), critical for hard-switched SMPS and H-bridge drive circuits.
Technical Context
This MOSFET employs Infineon's HEXFET® process with optimized cell layout for reduced conduction and switching losses. Its threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling reliable gate drive from 5 V logic-level controllers without level-shifting.
The device features a fully avalanche-rated structure and integrated body diode with reverse recovery time (trr) of 55 ns and Qrr of 32 nC, supporting synchronous rectification and freewheeling in buck and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage in off-state; supports 48 V input bus designs with 2× safety margin. |
| ID (continuous, TC=25°C) | 17 A - Sustains full load current at heatsink-mounted case temperature; derates to 11.5 A at 100°C. |
| RDS(on) (typ, VGS=10 V) | 4.8 mΩ - Enables <1 W conduction loss at 14 A, reducing thermal stress in compact PCB layouts. |
| Qg | 32 nC - Low total gate charge minimizes driver power and enables efficient 500 kHz+ switching in LLC resonant converters. |
| EAS | 125 mJ - Rated single-pulse avalanche energy ensures reliability during inductive turn-off transients without external snubbers. |
| tf | 25 ns - Fast fall time reduces switching transition losses and EMI generation in high-frequency power stages. |
Pinout & Package
IRLR3410TRR is housed in a DPAK (TO-252) thermally enhanced surface-mount package with exposed drain pad for improved heat dissipation. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path for channel current | Internally connected to substrate; must be routed to low-inductance ground plane for stable switching. |
| Pin 2 (Gate) | Control electrode for channel modulation | High-impedance input requiring <10 Ω series gate resistor to damp ringing and limit dV/dt-induced shoot-through. |
| Pin 3 (Drain) | Main power output terminal | Exposed metal pad on bottom side; electrically and thermally tied to drain; requires solder stencil design for optimal thermal transfer. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Operates fully enhanced at VGS ≥ 5 V, eliminating need for dedicated gate drivers in microcontroller-based motor control. |
| Low RDS(on) × Qg figure-of-merit | 154 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 100–500 kHz DC-DC applications. |
| 100% UIS tested | Every unit undergoes Unclamped Inductive Switching validation to guarantee minimum EAS performance in real-world inductive loads. |
| Enhanced dv/dt ruggedness | Rated for 4.5 V/ns (min) - Resists false turn-on during high-slew-rate voltage transients in half-bridge configurations. |
Applications
| Industrial Motor Drives | Server VRMs |
|---|---|
Use Scenario: Half-bridge gate driver stage controlling 24–48 V BLDC motors in HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: High-side and low-side switching element; synchronized with complementary PWM signals at 20–100 kHz. Use Value: Low RDS(on) and fast tf reduce conduction and switching losses, enabling >96% efficiency at 15 A load with minimal heatsinking. | Use Scenario: Synchronous rectifier in multiphase buck converters delivering 12 V → 1.2 V @ 100 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Bottom-side FET in interleaved phase leg; driven with dead-time-controlled gate signals. Use Value: 4.8 mΩ RDS(on) and 32 nC Qg minimize I²R loss and driver power, supporting high-current density VRM designs. |
| Telecom Power Supplies | Automotive Body Control Modules |
Use Scenario: Primary switch in 48 V input telecom rectifiers converting to ±12 V/±5 V auxiliary rails. IC Role / Device Role / Timing Role: Main power switch in forward or active-clamp forward topology operating at 250–350 kHz. Use Value: 125 mJ EAS withstands repetitive inductive spikes during line transients, improving system MTBF. | Use Scenario: Load switch for 12 V battery-fed solenoids, relays, and LED arrays in door modules and lighting control units. IC Role / Device Role / Timing Role: Single-ended high-side or low-side power switch controlled by automotive MCU GPIO pins. Use Value: Logic-level VGS(th) allows direct drive from 5 V MCU outputs; integrated avalanche rating eliminates need for external flyback diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF10 | RDS(on) = 80 mΩ (higher), Qg = 25 nC (lower), VDS = 100 V, TO-220 package | Requires larger heatsink and through-hole assembly; unsuitable for space-constrained SMT designs | Prefer IRLR3410TRR for DPAK footprint and lower conduction loss in high-current SMT power stages. |
| IRFR3410 | Same die, but in TO-251 (IPAK) package; identical RDS(on), Qg, and ratings | TO-251 has inferior thermal resistance (RθJC = 3.5 °C/W vs. 2.5 °C/W for DPAK); less effective for >10 A operation | IRLR3410TRR offers superior thermal performance and board-level reliability in high-power-density layouts. |
Compared with STP16NF10 and IRFR3410, the IRLR3410TRR delivers the lowest RDS(on) in a thermally optimized DPAK package, making it the preferred choice for high-efficiency, high-current SMT power conversion where thermal management and footprint are critical.
Availability
IRLR3410TRR is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, telecom power supplies, and automotive body control modules requiring stable component supply across multi-year production cycles.
Supply support for IRLR3410TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
The IRLR3410TRR belongs to Infineon's industry-standard HEXFET® logic-level MOSFET product line, engineered for high-efficiency switching in industrial, computing, and telecom power systems.
FAQ
What is the maximum junction temperature for continuous operation?
The IRLR3410TRR has a maximum rated junction temperature (TJ) of 175 °C. Derating curves in the official Infineon datasheet specify that continuous ID drops linearly from 17 A at TC = 25 °C to 0 A at TC = 110 °C, assuming proper PCB copper area and thermal via design per JEDEC standards.
Does this MOSFET require a gate resistor, and what value is recommended?
Yes, a gate resistor is required to control switching speed and suppress oscillation. Infineon recommends 4.7 Ω to 10 Ω in series with the gate driver output. Lower values increase dI/dt and EMI risk; higher values slow switching and raise dynamic losses-optimal value depends on driver strength and layout parasitics.
Can IRLR3410TRR be used in synchronous rectification applications?
Yes, the IRLR3410TRR is qualified for synchronous rectification due to its low RDS(on), fast body diode (trr = 55 ns), and low Qrr (32 nC). It is commonly deployed as the secondary-side switch in isolated DC-DC converters up to 300 kHz, replacing Schottky diodes to improve efficiency by 2–4%.
Is the IRLR3410TRR lead-free and RoHS compliant?
Yes, the IRLR3410TRR is manufactured in accordance with RoHS Directive 2011/65/EU and is lead-free. The device carries the "Pb-free" marking on the package and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30 °C/60% RH.
IRLR3410TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 79W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR3410TRR FAQ
1.How can I place an order for IRLR3410TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR3410TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR3410TRR reliable?
The price and inventory of IRLR3410TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3410TRR is usually 5 days.
3.What payment methods are accepted for IRLR3410TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3410TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR3410TRR?
IRLR3410TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR3410TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR3410TRR?
For technical support, including IRLR3410TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3410TRR requirements.
6.How does Aetrix verify that IRLR3410TRR is sourced from the original manufacturer or authorized distributors?
All IRLR3410TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3410TRR meets industry standards.
7.What is the process for return or replacement of IRLR3410TRR?
All IRLR3410TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3410TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR3410TRR part is unused and in its original packaging.
Return procedure for IRLR3410TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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