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Infineon Technologies IRLR3410TRRPBF

Part No.:
IRLR3410TRRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR3410TRRPBF.pdf
Description:
MOSFET N-CH 100V 17A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,582

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Product details

Overview

IRLR3410TRRPBF from Infineon Technologies is a logic-level N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 100V VDSS, 0.105 Ω RDS(on) at VGS = 10 V/ID = 10 A, and 17 A continuous drain current at TC = 25°C. It delivers fast switching (tr = 53 ns), full avalanche rating (EAS = 150 mJ), and is optimized for DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRLR3410TRRPBF datasheet, IRLR3410TRRPBF pinout, IRLR3410TRRPBF application, or IRLR3410TRRPBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 4–5 V gate bias, surface-mount D-Pak thermal performance (RθJC = 1.9 °C/W), and body diode recovery characteristics (trr = 140–210 ns).

Technical Context

This MOSFET employs fifth-generation HEXFET process technology to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Qg = 34 nC, Qgd = 20 nC) supports high-frequency PWM operation up to several hundred kHz in synchronous buck topologies.

The integrated body diode exhibits VSD = 1.3 V at IS = 9.0 A and controlled reverse recovery (Qrr = 740–1100 nC), enabling reliable freewheeling in hard-switched H-bridge motor control without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100 V - Maximum blocking voltage before avalanche conduction; suitable for 48V bus systems with margin.
RDS(on) @ VGS = 10 V0.105 Ω - Confirmed on-resistance at standard gate drive; enables <1.0 W conduction loss at 10 A DC.
ID (continuous, TC = 25°C)17 A - Continuous current rating under ideal heatsinking; defines PCB copper area and thermal pad design.
Qg34 nC - Total gate charge; determines driver strength requirement and switching loss at 500 kHz.
tr/tf53 ns / 26 ns - Rise/fall times at VDD = 50 V, ID = 9 A; constrains minimum dead-time in bridge configurations.
EAS150 mJ - Single-pulse avalanche energy; validates robustness against inductive turn-off transients in motor drives.
VGS(th)1.0–2.0 V - Gate threshold range; ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain tab for thermal conduction; 3-terminal configuration: Gate (G), Drain (D), Source (S). Standard footprint per IR application note AN-994.

Pin/TerminalCircuit RoleDesign Meaning
GControl electrodeAccepts logic-level gate drive; requires <34 nC charge for full enhancement; sensitive to ESD.
DMain current path anodeConnected to PCB thermal pad; carries full load current and dissipates heat via case-to-PCB conduction.
SMain current path cathode & referenceSource node ties to power ground; internal source inductance (LS = 7.5 nH) affects high-di/dt ringing.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced with 4.0 V gate bias (RDS(on) = 0.155 Ω), compatible with 3.3 V MCU outputs.
Ultra-low RDS(on)0.105 Ω at 10 V enables <1.8 W conduction loss at 13 A, reducing thermal stress in compact layouts.
Fully avalanche rated150 mJ single-pulse EAS validated per JEDEC JESD24-11; eliminates need for external snubbers in inductive loads.
Fast switching7.2 ns td(on) and 30 ns td(off) support >300 kHz PWM in isolated DC-DC converters with low gate drive loss.

Applications

DC-DC Buck ConverterBrushless DC Motor Driver

Use Scenario: Synchronous rectification in 12–48 V input, 3–12 V output step-down converters for telecom and industrial power supplies.

IC Role / Device Role / Timing Role: High-side or low-side switching element; operates in hard-switched PWM mode at 200–500 kHz.

Use Value: Low RDS(on) reduces conduction loss; fast tr/tf minimizes overlap loss; logic-level gate simplifies driver IC selection.

Use Scenario: Half-bridge leg in 3-phase BLDC inverters for HVAC blowers, power tools, and e-bike controllers.

IC Role / Device Role / Timing Role: Power switch in each phase leg; commutated at up to 20 kHz with 1–2 µs dead-time.

Use Value: Avalanche rating withstands back-EMF spikes during commutation; body diode trr < 210 ns prevents shoot-through in freewheeling.

LED Constant-Current DriverIndustrial Solenoid Control

Use Scenario: High-current LED string switching in architectural and stage lighting systems with 24–48 V bus.

IC Role / Device Role / Timing Role: PWM dimming switch in constant-current sink topology; duty-cycled at 1–20 kHz.

Use Value: 17 A continuous rating supports >100 W LED loads; low VSD = 1.3 V minimizes forward drop in high-side sensing.

Use Scenario: On/off control of 24 V DC solenoids and valves in PLC I/O modules and factory automation.

IC Role / Device Role / Timing Role: Load switch with integrated flyback protection; switched at <10 Hz with inductive turn-off transients.

Use Value: 150 mJ EAS absorbs stored inductor energy without external TVS; lead-free D-Pak supports automated reflow assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR3714TRPBFVDSS = 100 V, RDS(on) = 0.045 Ω @ 10 V, Qg = 42 nC, higher current (25 A)Lower conduction loss but higher gate drive demand; better for high-efficiency, lower-frequency (<100 kHz) designsSelect when thermal budget is tight and gate drive can supply >40 nC; avoid if driver is weak or frequency >300 kHz
STP16NF10VDSS = 100 V, RDS(on) = 0.12 Ω @ 10 V, Qg = 25 nC, TO-220 packageHigher RDS(on) but lower Qg; through-hole mounting limits density and thermal performanceChoose for prototyping or low-volume through-hole assemblies where D-Pak reflow is unavailable

Compared with IRLR3410TRRPBF, IRLR3714TRPBF offers lower conduction loss at the cost of higher switching loss and gate drive burden, while STP16NF10 trades surface-mount efficiency for mechanical simplicity and lower gate charge-making IRLR3410TRRPBF the balanced choice for medium-power, medium-frequency SMPS and motor control.

Availability

IRLR3410TRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drivers, LED drivers, and industrial solenoid control requiring stable component supply across production lifecycles.

Supply support for IRLR3410TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, automotive, and consumer applications-emphasizing low RDS(on), fast switching, and rugged transient handling.

FAQ

Is IRLR3410TRRPBF RoHS-compliant and lead-free?

Yes. The "PbF" suffix and "P" in the date code confirm compliance with RoHS Directive 2011/65/EU and lead-free soldering qualification. The device uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.

What is the maximum recommended PCB copper area for thermal relief in D-Pak mounting?

Per Infineon application note AN-994, a minimum 1" × 1" (25.4 mm × 25.4 mm) copper pour on the top layer, connected to the drain tab via ≥4 thermal vias (0.3 mm diameter), achieves RθJA ≈ 50°C/W. Larger copper areas further reduce junction temperature under 17 A continuous load.

Can IRLR3410TRRPBF be used in linear (analog) regulation mode?

No. While it can operate in the linear region briefly, its Safe Operating Area (SOA) curve (Fig. 8) limits continuous linear use to <2 A at 50 V due to thermal runaway risk. It is designed exclusively for switching applications with defined PWM duty cycles and adequate heatsinking.

Does the body diode support synchronous rectification in buck converters?

No. The body diode has trr = 140–210 ns and Qrr = 740–1100 nC, making it unsuitable for high-frequency synchronous rectification. For that function, a dedicated low-Qrr Schottky or GaN FET is required; IRLR3410TRRPBF serves best as the main switching FET with external freewheeling diode or complementary low-side FET.

IRLR3410TRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRLR3410TRRPBF FAQ

1.How can I place an order for IRLR3410TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3410TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3410TRRPBF reliable?

The price and inventory of IRLR3410TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3410TRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR3410TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3410TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3410TRRPBF?

IRLR3410TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3410TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3410TRRPBF?

For technical support, including IRLR3410TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3410TRRPBF requirements.

6.How does Aetrix verify that IRLR3410TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3410TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3410TRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR3410TRRPBF?

All IRLR3410TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3410TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3410TRRPBF part is unused and in its original packaging.

Return procedure for IRLR3410TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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