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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3636PBF

Name: IRLR3636PBF
Brand: Infineon Technologies
SKU: IRLR3636PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3636PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3636PBF.pdf

Description:: MOSFET N-CH 60V 50A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR3636PBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel HEXFET Power MOSFET in D-Pak package, rated for 60 V V_DS, 5.4 mΩ R_DS(on) at 4.5 V V_GS, and 50 A continuous drain current (package-limited), optimized for high-efficiency synchronous rectification in SMPS and DC motor drive circuits.

For engineers reviewing the IRLR3636PBF datasheet, IRLR3636PBF pinout, IRLR3636PBF application, or IRLR3636PBF equivalent, key selection criteria include its low 4.5 V gate drive compatibility, 33 nC total gate charge, enhanced body diode dV/dt and dI/dt capability, and fully characterized avalanche SOA - critical for hard-switched and high-frequency power conversion designs.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve ultra-low R_DS(on) while maintaining robust switching performance. Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on with standard logic-level controllers, and its 332 pF C_oss and 163 pF C_rss support fast, controlled transitions in high-frequency topologies.

The device integrates an intrinsic body diode with 27 ns reverse recovery time (T_J = 25°C) and 31 nC Q_rr, enabling efficient unclamped inductive switching. Avalanche ruggedness is validated up to 700 mJ single-pulse EAS at T_J = 25°C, with thermal resistance R_θJC of 1.05 °C/W supporting high-power density PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and industrial DC supplies.
R_DS(on) @ 4.5 V	5.4 mΩ (typ), 6.8 mΩ (max) - Enables <1 W conduction loss at 50 A, critical for thermally constrained SMPS outputs.
I_D (pkg-limited)	50 A - Sustained current capability defined by D-Pak thermal and bond-wire limits, not silicon.
Q_g	33 nC (typ), 49 nC (max) - Determines gate driver strength requirement; supports >1 MHz switching with moderate drive impedance.
C_oss	332 pF - Output capacitance directly impacts turn-off energy and snubber design in hard-switched converters.
E_AS	700 mJ (typ) - Single-pulse avalanche energy rating enables robust operation during inductive fault transients without derating.
V_GS(th)	1.0–2.5 V - Ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs, eliminating level-shifting needs.

Pinout & Package

IRLR3636PBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal enhancement. The three terminals are arranged in standard G-D-S order (left-to-right when viewed from top with marking side up).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives logic-level voltage (≥4.5 V) to fully enhance channel; internal gate resistance 0.6 Ω reduces ringing.
Drain (D)	High-side current path	Connected to exposed copper pad on bottom; primary thermal path to PCB heatsink; rated for 60 V blocking.
Source (S)	Reference node / return path	Common connection point for gate drive reference and load return; ties to power ground in low-side switch configurations.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 4.5 V V_GS, compatible with 3.3 V/5 V MCUs and PWM controllers without external drivers.
Ultra-low R_DS(on)	5.4 mΩ at 4.5 V enables <1.35 W conduction loss at 50 A, reducing heatsink requirements in compact power stages.
Enhanced body diode	27 ns t_rr and 1109 A/µs dI/dt rating allow reliable synchronous rectification and freewheeling in high-dI/dt DC-DC stages.
Avalanche-rated SOA	Validated 700 mJ single-pulse EAS and 50 A I_AR support unclamped inductive switching in motor drives and UPS inverters.
Lead-free construction	RoHS-compliant packaging meets IPC/JEDEC J-STD-020 reflow profiles and industrial environmental standards.

Applications

DC Motor Drive

Synchronous Rectification

Use Scenario: Full-bridge H-bridge control of 24–48 V brushed DC motors in industrial actuators and robotics.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-on (<45 ns td(on)) and low R_DS(on) to minimize I²R losses during PWM commutation.

Use Value: Enables >96% efficiency at 50 A load current while sustaining 100 kHz PWM without thermal throttling.

Use Scenario: Secondary-side rectification in 60 V-output LLC resonant converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Synchronously gated replacement for Schottky diodes, timed to conduct only during V_DS < 0.5 V intervals.

Use Value: Reduces forward conduction loss by 60% vs. 60 V Schottky, cutting secondary-side heat by >3 W at 40 A output.

Uninterruptible Power Supply

High-Frequency Buck Converter

Use Scenario: Bidirectional power flow control in online UPS inverters handling 1–3 kVA loads.

IC Role / Device Role / Timing Role: High-current, avalanche-rugged switch in half-bridge output stage, subjected to repetitive inductive flyback stress.

Use Value: Survives >10⁵ unclamped inductive cycles at 50 A due to validated 700 mJ EAS and 1.05 °C/W R_θJC.

Use Scenario: Main switching FET in 500 kHz–1 MHz buck regulators powering FPGA core rails (0.8–1.2 V @ 30–60 A).

IC Role / Device Role / Timing Role: High-speed, low-Q_g power switch with minimal Miller plateau delay to maintain tight duty-cycle control.

Use Value: Achieves <15 ns effective turn-off delay (td(off)+tf) enabling stable regulation at >800 kHz with 4.5 V gate drive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	Higher R_DS(on) (8.0 mΩ @ 4.5 V), lower ID (30 A pkg-limited), same D-Pak package	Less suitable for >40 A continuous loads; reduced thermal margin in high-duty-cycle SMPS	Select when cost sensitivity outweighs conduction loss; verify thermal rise at target load.
STP55NF06L	Same V_DS (60 V), higher R_DS(on) (10.5 mΩ @ 4.5 V), TO-220 package (higher R_θJA)	Requires larger heatsink; unsuitable for space-constrained SMT designs where D-Pak footprint is mandatory	Prefer only if through-hole mounting is required or legacy board compatibility is essential.

Compared with IRLR3636PBF, IRL3803PBF trades lower cost for higher conduction loss and reduced current capacity, while STP55NF06L sacrifices SMT compatibility and thermal performance for broader distributor availability - making IRLR3636PBF optimal for high-density, high-efficiency SMT power stages.

Availability

IRLR3636PBF is available at Aetrix Electronics and suitable for DC motor drive, synchronous rectification in SMPS, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRLR3636PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with deep expertise in silicon-based power semiconductors.

The HEXFET® Power MOSFET product line was originally developed by International Rectifier (acquired by Infineon in 2015) to deliver high-current, low-R_DS(on) switching solutions for high-efficiency power conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IRLR3636PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 70 A (silicon-limited) per the Absolute Maximum Ratings table. However, the package-limited rating remains 50 A across all case temperatures, governed by bond wire and thermal interface constraints - this 50 A value must be used for thermal design and layout verification.

Does IRLR3636PBF require a gate resistor for stability in high-frequency switching?

Yes - a series gate resistor (typically 5–25 Ω) is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with the device's 0.6 Ω internal gate resistance and 3779 pF C_iss. Without it, ringing can exceed V_GS absolute maximum (±16 V) and cause erratic switching or gate oxide stress.

Can IRLR3636PBF be used in avalanche mode for clamping transient voltages?

Yes - it is fully characterized for single-pulse avalanche with E_AS = 700 mJ at T_J = 25°C. Repetitive avalanche is permitted only if junction temperature stays below 175°C and energy per pulse remains within the derated curve in Figure 12; sustained operation requires careful thermal modeling and pulse-width limitation.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

At 50 A and 25°C, its V_SD is 1.3 V versus ~0.5 V for a 60 V Schottky, but its 27 ns t_rr and 31 nC Q_rr reduce switching loss significantly. When actively synchronized, total loss (conduction + recovery) is lower than Schottky above ~200 kHz due to absence of reverse recovery tail current and controllable turn-off timing.

IRLR3636PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3779 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 143W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3636PBF FAQ

1.How can I place an order for IRLR3636PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3636PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3636PBF reliable?

The price and inventory of IRLR3636PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3636PBF is usually 5 days.

3.What payment methods are accepted for IRLR3636PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3636PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3636PBF?

IRLR3636PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3636PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3636PBF?

For technical support, including IRLR3636PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3636PBF requirements.

6.How does Aetrix verify that IRLR3636PBF is sourced from the original manufacturer or authorized distributors?

All IRLR3636PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3636PBF meets industry standards.

7.What is the process for return or replacement of IRLR3636PBF?

All IRLR3636PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3636PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3636PBF part is unused and in its original packaging.

Return procedure for IRLR3636PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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